Saehan Park

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Limited lateral growth of S/D epi by outer dielectric layer in 3-di...
- Patent number 12,364,018
- Issue date Jul 15, 2025
- Samsung Electronics Co., Ltd.
- Inchan Hwang
Information Patent Grant
Integrated circuit devices including a power rail and methods of fo...
- Patent number 12,230,571
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Gilhwan Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-coupled gate design for stacked device with separated top-dow...
- Patent number 12,183,738
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Seunghyun Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective double diffusion break structures for multi-stack semicon...
- Patent number 12,144,163
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside power distribution network semiconductor package and metho...
- Patent number 12,142,564
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Saehan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked device with backside power distribution network and method...
- Patent number 12,131,996
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Saehan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through silicon buried power rail implemented backside power distri...
- Patent number 12,125,788
- Issue date Oct 22, 2024
- Samsung Electronics Co., Ltd.
- Saehan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through silicon buried power rail implemented backside power distri...
- Patent number 11,881,455
- Issue date Jan 23, 2024
- Samsung Electronics Co., Ltd.
- Saehan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside power distribution network semiconductor package and metho...
- Patent number 11,769,728
- Issue date Sep 26, 2023
- Samsung Electronics Co., Ltd.
- Saehan Park
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CROSS-COUPLED GATE DESIGN FOR STACKED DEVICE WITH SEPARATED TOP-DOW...
- Publication number 20250056873
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Seunghyun SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DOUBLE DIFFUSION BREAK STRUCTURES FOR MULTI-STACK SEMICON...
- Publication number 20250031360
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMAL BUDGET ENHANCED BURIED POWER RAIL AND METHOD OF MANUFACTURI...
- Publication number 20240429169
- Publication date Dec 26, 2024
- SAMSUNG ELECTRONICS CO,. LTD.
- Saehan PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH SILICON BURIED POWER RAIL IMPLEMENTED BACKSIDE POWER DISTRI...
- Publication number 20240063123
- Publication date Feb 22, 2024
- Samsung Electronics Co., Ltd.
- Saehan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE POWER DISTRIBUTION NETWORK SEMICONDUCTOR PACKAGE AND METHO...
- Publication number 20230411294
- Publication date Dec 21, 2023
- Samsung Electronics Co., Ltd.
- Saehan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOUNDARY GATE STRUCTURE FOR DIFFUSION BREAK IN 3D-STACKED SEMICONDU...
- Publication number 20230343825
- Publication date Oct 26, 2023
- Samsung Electronics Co., Ltd.
- Saehan PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIMITED LATERAL GROWTH OF S/D EPI BY OUTER DIELECTRIC LAYER IN 3-DI...
- Publication number 20230335549
- Publication date Oct 19, 2023
- Samsung Electronics Co., Ltd.
- Inchan Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED DEVICE WITH BACKSIDE POWER DISTRIBUTION NETWORK AND METHOD...
- Publication number 20230307364
- Publication date Sep 28, 2023
- Samsung Electronics Co., Ltd.
- Saehan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED ELEMENTS AND METHODS O...
- Publication number 20230275021
- Publication date Aug 31, 2023
- Samsung Electronics Co., Ltd.
- BYOUNGHAK HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING A POWER RAIL AND METHODS OF FO...
- Publication number 20230163073
- Publication date May 25, 2023
- Samsung Electronics Co., Ltd.
- GILHWAN SON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING A CROSS-COUPLED STRUCTURE
- Publication number 20230047840
- Publication date Feb 16, 2023
- Samsung Electronics Co., Ltd.
- Seungyoung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH SILICON BURIED POWER RAIL IMPLEMENTED BACKSIDE POWER DISTRI...
- Publication number 20220384345
- Publication date Dec 1, 2022
- Samsung Electronics Co., Ltd.
- Saehan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMAL BUDGET ENHANCED BURIED POWER RAIL AND METHOD OF MANUFACTURI...
- Publication number 20220336355
- Publication date Oct 20, 2022
- Samsung Electronics Co., Ltd.
- Saehan PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DOUBLE DIFFUSION BREAK STRUCTURES FOR MULTI-STACK SEMICON...
- Publication number 20220336473
- Publication date Oct 20, 2022
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-COUPLED GATE DESIGN FOR STACKED DEVICE WITH SEPARATED TOP-DOW...
- Publication number 20220246610
- Publication date Aug 4, 2022
- Samsung Electronics Co., Ltd.
- Seunghyun SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED SEMICONDUCTOR DEVICE ARCHITECTURE AND METHOD OF MANUFACTURI...
- Publication number 20220230961
- Publication date Jul 21, 2022
- Samsung Electronics Co., Ltd.
- Saehan PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE POWER DISTRIBUTION NETWORK SEMICONDUCTOR ARCHITECTURE USIN...
- Publication number 20220230947
- Publication date Jul 21, 2022
- Samsung Electronics Co., Ltd.
- Saehan PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE POWER DISTRIBUTION NETWORK SEMICONDUCTOR PACKAGE AND METHO...
- Publication number 20220157723
- Publication date May 19, 2022
- Samsung Electronics Co., Ltd.
- Saehan Park
- H01 - BASIC ELECTRIC ELEMENTS

Saehan Park

Person

Patents Grantslast 30 patents

Limited lateral growth of S/D epi by outer dielectric layer in 3-di...

Integrated circuit devices including a power rail and methods of fo...

Cross-coupled gate design for stacked device with separated top-dow...

Selective double diffusion break structures for multi-stack semicon...

Backside power distribution network semiconductor package and metho...

Stacked device with backside power distribution network and method...

Through silicon buried power rail implemented backside power distri...

Through silicon buried power rail implemented backside power distri...

Backside power distribution network semiconductor package and metho...

Patents Applicationslast 30 patents

CROSS-COUPLED GATE DESIGN FOR STACKED DEVICE WITH SEPARATED TOP-DOW...

SELECTIVE DOUBLE DIFFUSION BREAK STRUCTURES FOR MULTI-STACK SEMICON...

THERMAL BUDGET ENHANCED BURIED POWER RAIL AND METHOD OF MANUFACTURI...

THROUGH SILICON BURIED POWER RAIL IMPLEMENTED BACKSIDE POWER DISTRI...

BACKSIDE POWER DISTRIBUTION NETWORK SEMICONDUCTOR PACKAGE AND METHO...

BOUNDARY GATE STRUCTURE FOR DIFFUSION BREAK IN 3D-STACKED SEMICONDU...

LIMITED LATERAL GROWTH OF S/D EPI BY OUTER DIELECTRIC LAYER IN 3-DI...

STACKED DEVICE WITH BACKSIDE POWER DISTRIBUTION NETWORK AND METHOD...

INTEGRATED CIRCUIT DEVICES INCLUDING STACKED ELEMENTS AND METHODS O...

INTEGRATED CIRCUIT DEVICES INCLUDING A POWER RAIL AND METHODS OF FO...

INTEGRATED CIRCUIT DEVICES INCLUDING A CROSS-COUPLED STRUCTURE

THROUGH SILICON BURIED POWER RAIL IMPLEMENTED BACKSIDE POWER DISTRI...

THERMAL BUDGET ENHANCED BURIED POWER RAIL AND METHOD OF MANUFACTURI...

SELECTIVE DOUBLE DIFFUSION BREAK STRUCTURES FOR MULTI-STACK SEMICON...

CROSS-COUPLED GATE DESIGN FOR STACKED DEVICE WITH SEPARATED TOP-DOW...

STACKED SEMICONDUCTOR DEVICE ARCHITECTURE AND METHOD OF MANUFACTURI...

BACKSIDE POWER DISTRIBUTION NETWORK SEMICONDUCTOR ARCHITECTURE USIN...

BACKSIDE POWER DISTRIBUTION NETWORK SEMICONDUCTOR PACKAGE AND METHO...