Sahil Patel

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Dual magnetic tunnel junction (DMTJ) stack design
- Patent number 12,082,509
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- G11 - INFORMATION STORAGE
Information Patent Grant
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...
- Patent number 11,956,971
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
Information Patent Grant
Post treatment to reduce shunting devices for physical etching process
- Patent number 11,903,324
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-orbit torque MRAM structure and manufacture thereof
- Patent number 11,723,283
- Issue date Aug 8, 2023
- Applied Materials, Inc.
- Minrui Yu
- G11 - INFORMATION STORAGE
Information Patent Grant
Low resistance MgO capping layer for perpendicularly magnetized mag...
- Patent number 11,696,511
- Issue date Jul 4, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching and encapsulation scheme for magnetic tunnel junction fabri...
- Patent number 11,631,802
- Issue date Apr 18, 2023
- Headway Technologies, Inc.
- Vignesh Sundar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolayer-by-monolayer growth of MgO layers using mg sublimation an...
- Patent number 11,597,993
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sahil Patel
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Magnetic tunnel junctions with protection layers
- Patent number 11,522,126
- Issue date Dec 6, 2022
- Applied Materials, Inc.
- Lin Xue
- G11 - INFORMATION STORAGE
Information Patent Grant
Post treatment to reduce shunting devices for physical etching process
- Patent number 11,424,405
- Issue date Aug 23, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon oxynitride based encapsulation layer for magnetic tunnel ju...
- Patent number 11,411,174
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Combined physical and chemical etch to reduce magnetic tunnel junct...
- Patent number 11,316,103
- Issue date Apr 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Dongna Shen
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method to integrate MRAM devices to the interconnects of 30nm and b...
- Patent number 11,289,645
- Issue date Mar 29, 2022
- Headway Technologies, Inc.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduce intermixing on MTJ sidewall by oxidation
- Patent number 11,031,548
- Issue date Jun 8, 2021
- Headway Technologies, Inc.
- Dongna Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolayer-by-monolayer growth of MgO layers using Mg sublimation an...
- Patent number 11,001,919
- Issue date May 11, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sahil Patel
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Low resistance MgO capping layer for perpendicularly magnetized mag...
- Patent number 10,797,232
- Issue date Oct 6, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual magnetic tunnel junction (DMTJ) stack design
- Patent number 10,797,225
- Issue date Oct 6, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- G11 - INFORMATION STORAGE
Information Patent Grant
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...
- Patent number 10,784,310
- Issue date Sep 22, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post treatment to reduce shunting devices for physical etching process
- Patent number 10,700,269
- Issue date Jun 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolayer-by-monolayer growth of MgO layers using Mg sublimation an...
- Patent number 10,648,069
- Issue date May 12, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sahil Patel
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Low resistance MgO capping layer for perpendicularly magnetized mag...
- Patent number 10,522,745
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Combined physical and chemical etch to reduce magnetic tunnel junct...
- Patent number 10,522,749
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dongna Shen
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Silicon oxynitride based encapsulation layer for magnetic tunnel ju...
- Patent number 10,516,100
- Issue date Dec 24, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Post treatment to reduce shunting devices for physical etching process
- Patent number 10,297,746
- Issue date May 21, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer structure for reducing film roughness in magnetic devices
- Patent number 10,115,892
- Issue date Oct 30, 2018
- Headway Technologies, Inc.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
High temperature volatilization of sidewall materials from patterne...
- Patent number 10,038,138
- Issue date Jul 31, 2018
- Headway Technologies, Inc.
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric encapsulation layer for magnetic tunnel junction (MTJ) d...
- Patent number 9,935,261
- Issue date Apr 3, 2018
- Headway Technologies, Inc.
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METAL OXIDE PRECLEAN FOR BOTTOM-UP GAPFILL IN MEOL AND BEOL
- Publication number 20240420947
- Publication date Dec 19, 2024
- Applied Materials, Inc.
- Shiyu YUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interlayer for Resistivity Reduction in Metal Deposition Applications
- Publication number 20240194527
- Publication date Jun 13, 2024
- Applied Materials, Inc.
- Sahil Jaykumar PATEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buffer Layer for Dielectric Protection in Physical Vapor Deposition...
- Publication number 20240145300
- Publication date May 2, 2024
- Sahil PATEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF
- Publication number 20230389441
- Publication date Nov 30, 2023
- Applied Materials, Inc.
- Minrui YU
- G11 - INFORMATION STORAGE
Information Patent Application
Etching and Encapsulation Scheme for Magnetic Tunnel Junction Fabri...
- Publication number 20230217834
- Publication date Jul 6, 2023
- HEADWAY TECHNOLOGIES, INC.
- Vignesh Sundar
Information Patent Application
SILICON OXYNITRIDE BASED ENCAPSULATION LAYER FOR MAGNETIC TUNNEL JU...
- Publication number 20220384718
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vignesh Sundar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Post Treatment to Reduce Shunting Devices for Physical Etching Process
- Publication number 20220359821
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF
- Publication number 20210351342
- Publication date Nov 11, 2021
- Applied Materials, Inc.
- Minrui YUI
- G11 - INFORMATION STORAGE
Information Patent Application
Monolayer-By-Monolayer Growth of MgO Layers Using Mg Sublimation an...
- Publication number 20210262078
- Publication date Aug 26, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etching and Encapsulation Scheme for Magnetic Tunnel Junction Fabri...
- Publication number 20210143322
- Publication date May 13, 2021
- HEADWAY TECHNOLOGIES, INC.
- Vignesh Sundar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduce Intermixing on MTJ Sidewall by Oxidation
- Publication number 20210135097
- Publication date May 6, 2021
- HEADWAY TECHNOLOGIES, INC.
- Dongna Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTIONS WITH PROTECTION LAYERS
- Publication number 20210111338
- Publication date Apr 15, 2021
- Applied Materials, Inc.
- Lin XUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Magnetic Tunnel Junction (DMTJ) Stack Design
- Publication number 20210020830
- Publication date Jan 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vignesh Sundar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...
- Publication number 20210020831
- Publication date Jan 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...
- Publication number 20210013260
- Publication date Jan 14, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Post Treatment to Reduce Shunting Devices for Physical Etching Process
- Publication number 20200328345
- Publication date Oct 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Monolayer-By-Monolayer Growth of MgO Layers Using Mg Sublimation an...
- Publication number 20200270737
- Publication date Aug 27, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sahil Patel
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method to Integrate MRAM Devices to the Interconnects of 30nm and B...
- Publication number 20200212297
- Publication date Jul 2, 2020
- HEADWAY TECHNOLOGIES, INC.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...
- Publication number 20200152698
- Publication date May 14, 2020
- HEADWAY TECHNOLOGIES, INC.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMBINED PHYSICAL AND CHEMICAL ETCH TO REDUCE MAGNETIC TUNNEL JUNCT...
- Publication number 20200144492
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dongna Shen
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...
- Publication number 20200136025
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Oxynitride Based Encapsulation Layer for Magnetic Tunnel Ju...
- Publication number 20200127192
- Publication date Apr 23, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vignesh Sundar
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Monolayer-By-Monolayer Growth of MgO Layers using Mg Sublimation an...
- Publication number 20200115788
- Publication date Apr 16, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sahil Patel
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Dual Magnetic Tunnel Junction (DMTJ) Stack Design
- Publication number 20200091408
- Publication date Mar 19, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vignesh Sundar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Post Treatment to Reduce Shunting Devices for Physical Etching Process
- Publication number 20190280197
- Publication date Sep 12, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...
- Publication number 20190189910
- Publication date Jun 20, 2019
- Taiwan Semiconductor Manufacturing company Ltd.
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
- Publication number 20190140168
- Publication date May 9, 2019
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
- Publication number 20190088866
- Publication date Mar 21, 2019
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
Silicon Oxynitride Based Encapsulation Layer for Magnetic Tunnel Ju...
- Publication number 20180358545
- Publication date Dec 13, 2018
- HEADWAY TECHNOLOGIES, INC.
- Vignesh Sundar
- G11 - INFORMATION STORAGE
Information Patent Application
Combined Physical and Chemical Etch to Reduce Magnetic Tunnel Junct...
- Publication number 20180331279
- Publication date Nov 15, 2018
- HEADWAY TECHNOLOGIES, INC.
- Dongna Shen
- B81 - MICRO-STRUCTURAL TECHNOLOGY

Sahil Patel

Person

Patents Grantslast 30 patents

Dual magnetic tunnel junction (DMTJ) stack design

Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...

Post treatment to reduce shunting devices for physical etching process

Spin-orbit torque MRAM structure and manufacture thereof

Low resistance MgO capping layer for perpendicularly magnetized mag...

Etching and encapsulation scheme for magnetic tunnel junction fabri...

Monolayer-by-monolayer growth of MgO layers using mg sublimation an...

Magnetic tunnel junctions with protection layers

Post treatment to reduce shunting devices for physical etching process

Silicon oxynitride based encapsulation layer for magnetic tunnel ju...

Combined physical and chemical etch to reduce magnetic tunnel junct...

Method to integrate MRAM devices to the interconnects of 30nm and b...

Reduce intermixing on MTJ sidewall by oxidation

Monolayer-by-monolayer growth of MgO layers using Mg sublimation an...

Low resistance MgO capping layer for perpendicularly magnetized mag...

Dual magnetic tunnel junction (DMTJ) stack design

Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...

Post treatment to reduce shunting devices for physical etching process

Monolayer-by-monolayer growth of MgO layers using Mg sublimation an...

Low resistance MgO capping layer for perpendicularly magnetized mag...

Combined physical and chemical etch to reduce magnetic tunnel junct...

Silicon oxynitride based encapsulation layer for magnetic tunnel ju...

Post treatment to reduce shunting devices for physical etching process

Multilayer structure for reducing film roughness in magnetic devices

High temperature volatilization of sidewall materials from patterne...

Dielectric encapsulation layer for magnetic tunnel junction (MTJ) d...

Patents Applicationslast 30 patents

METAL OXIDE PRECLEAN FOR BOTTOM-UP GAPFILL IN MEOL AND BEOL

Interlayer for Resistivity Reduction in Metal Deposition Applications

Buffer Layer for Dielectric Protection in Physical Vapor Deposition...

SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF

Etching and Encapsulation Scheme for Magnetic Tunnel Junction Fabri...

SILICON OXYNITRIDE BASED ENCAPSULATION LAYER FOR MAGNETIC TUNNEL JU...

Post Treatment to Reduce Shunting Devices for Physical Etching Process

SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF

Monolayer-By-Monolayer Growth of MgO Layers Using Mg Sublimation an...

Etching and Encapsulation Scheme for Magnetic Tunnel Junction Fabri...

Reduce Intermixing on MTJ Sidewall by Oxidation

MAGNETIC TUNNEL JUNCTIONS WITH PROTECTION LAYERS

Dual Magnetic Tunnel Junction (DMTJ) Stack Design

Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...

Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...

Post Treatment to Reduce Shunting Devices for Physical Etching Process

Monolayer-By-Monolayer Growth of MgO Layers Using Mg Sublimation an...

Method to Integrate MRAM Devices to the Interconnects of 30nm and B...

Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...

COMBINED PHYSICAL AND CHEMICAL ETCH TO REDUCE MAGNETIC TUNNEL JUNCT...

Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...

Silicon Oxynitride Based Encapsulation Layer for Magnetic Tunnel Ju...

Monolayer-By-Monolayer Growth of MgO Layers using Mg Sublimation an...

Dual Magnetic Tunnel Junction (DMTJ) Stack Design

Post Treatment to Reduce Shunting Devices for Physical Etching Process

Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...

Multilayer Structure for Reducing Film Roughness in Magnetic Devices

Multilayer Structure for Reducing Film Roughness in Magnetic Devices

Silicon Oxynitride Based Encapsulation Layer for Magnetic Tunnel Ju...

Combined Physical and Chemical Etch to Reduce Magnetic Tunnel Junct...