Sai-Hooi YEONG

Person

Zhubei City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Seed layer for ferroelectric memory device and manufacturing method...
- Patent number 12,261,043
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned active regions and passivation layer and methods of ma...
- Patent number 12,255,236
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Hung Wei Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and method
- Patent number 12,256,550
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor memory structure
- Patent number 12,256,551
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company Ltd.
- Nuo Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device, and integrated circuit device
- Patent number 12,250,829
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Conformal transfer doping method for Fin-like field effect transistor
- Patent number 12,249,640
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device structure including field effect transistors and ferroelectr...
- Patent number 12,245,436
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Chenchen Jacob Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative-capacitance and ferroelectric field-effect transistor (NCF...
- Patent number 12,243,932
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Grid structure to reduce domain size in ferroelectric memory device
- Patent number 12,245,435
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices including ferroelectric memory and methods of...
- Patent number 12,243,573
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chenchen Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device and method
- Patent number 12,238,926
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Feng Young
- G11 - INFORMATION STORAGE
Information Patent Grant
FINFET device with wrapped-around epitaxial structure and manufactu...
- Patent number 12,237,231
- Issue date Feb 25, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY CO., LTD.
- Cheng-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array contact structures
- Patent number 12,225,731
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Yu Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
System-on-chip with ferroelectric random access memory and tunable...
- Patent number 12,225,733
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts for semiconductor devices and methods of forming the same
- Patent number 12,218,209
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array test structure and method of forming the same
- Patent number 12,217,826
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,211,753
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate air spacer for fin-like field effect transistor
- Patent number 12,211,922
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and methods of forming same
- Patent number 12,207,478
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chenchen Jacob Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor including a compositionally-modulated active r...
- Patent number 12,199,188
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Wu-Wei Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level magnetic tunnel junction nor device with wrap-around ga...
- Patent number 12,193,242
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Han-Jong Chia
Information Patent Grant
Ferroelectric memory device and method of forming the same
- Patent number 12,193,241
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D ferroelectric memory
- Patent number 12,193,240
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Chen Wang
Information Patent Grant
Semiconductor package
- Patent number 12,170,265
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of manufacturing three-dimensional memory devices with cond...
- Patent number 12,171,102
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory device and method of forming the same
- Patent number 12,167,607
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory with FRAM and SRAM of IC
- Patent number 12,165,707
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
Fin field effect transistor having airgap and method for manufactur...
- Patent number 12,165,925
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory structure and interconnect structure of semico...
- Patent number 12,165,970
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of forming thereof
- Patent number 12,167,606
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
3D FERROELECTRIC MEMORY
- Publication number 20250089264
- Publication date Mar 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Chen Wang
Information Patent Application
SEMICONDUCTOR PACKAGE
- Publication number 20250070094
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-I Wu
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Device and Method of Forming Thereof
- Publication number 20250072002
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20250062223
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- MENG-HAN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20250056809
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING
- Publication number 20250029839
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240422986
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Chen Wang
Information Patent Application
AIR GAPS IN MEMORY ARRAY STRUCTURES
- Publication number 20240404875
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sheng-Chen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING EPITAXIAL STRUCTURE
- Publication number 20240395604
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sai-Hooi YEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395811
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yuan LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Device and Methods of Fabrication Thereof
- Publication number 20240397730
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL MEMORY DEVICE
- Publication number 20240389347
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Ta Yu
Information Patent Application
SEMICONDUCTOR CHIP
- Publication number 20240389351
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL DRAM STRUCTURE AND METHOD
- Publication number 20240389304
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ta Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240389335
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240389344
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED FERROELECTRIC FINFET MEMORY DEVICE
- Publication number 20240389345
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALABLE PATTERNING THROUGH LAYER EXPANSION PROCESS AND RESULTING S...
- Publication number 20240387246
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240389332
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CHIP
- Publication number 20240389336
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
Information Patent Application
SEMICONDUCTOR CHIP AND FABRICATION METHOD THEREOF
- Publication number 20240389346
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF TESTING A MEMORY CIRCUIT AND MEMORY CIRCUIT
- Publication number 20240386982
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-I WU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
THIN FILM TRANSISTOR INCLUDING A COMPOSITIONALLY-MODULATED ACTIVE R...
- Publication number 20240379872
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Wu-Wei TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-LAYER CHANNEL TRANSISTOR AND METHODS OF FORMING SAME
- Publication number 20240379873
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Hung Wei LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240381653
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240381654
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE GATE METAL-FERROELECTRIC-METAL-INSULATOR-SEMICONDUCTOR FIELD...
- Publication number 20240373642
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING
- Publication number 20240372010
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL METAL INSULATOR METAL CAPACITOR STRUCTURE
- Publication number 20240363681
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sai-Hooi YEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICE USING A MAGNESIUM OXIDE...
- Publication number 20240365560
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Mauricio Manfrini
- H01 - BASIC ELECTRIC ELEMENTS

Sai-Hooi YEONG

Person

Patents Grantslast 30 patents

Seed layer for ferroelectric memory device and manufacturing method...

Self-aligned active regions and passivation layer and methods of ma...

Three-dimensional memory device and method

Method for forming semiconductor memory structure

Memory device, and integrated circuit device

Conformal transfer doping method for Fin-like field effect transistor

Device structure including field effect transistors and ferroelectr...

Negative-capacitance and ferroelectric field-effect transistor (NCF...

Grid structure to reduce domain size in ferroelectric memory device

Semiconductor devices including ferroelectric memory and methods of...

Three-dimensional memory device and method

FINFET device with wrapped-around epitaxial structure and manufactu...

Memory array contact structures

System-on-chip with ferroelectric random access memory and tunable...

Contacts for semiconductor devices and methods of forming the same

Memory array test structure and method of forming the same

Semiconductor device

Gate air spacer for fin-like field effect transistor

Memory device and methods of forming same

Thin film transistor including a compositionally-modulated active r...

Multi-level magnetic tunnel junction nor device with wrap-around ga...

Ferroelectric memory device and method of forming the same

3D ferroelectric memory

Semiconductor package

Methods of manufacturing three-dimensional memory devices with cond...

Ferroelectric memory device and method of forming the same

Memory with FRAM and SRAM of IC

Fin field effect transistor having airgap and method for manufactur...

Semiconductor memory structure and interconnect structure of semico...

Memory device and method of forming thereof

Patents Applicationslast 30 patents

3D FERROELECTRIC MEMORY

SEMICONDUCTOR PACKAGE

Memory Device and Method of Forming Thereof

SEMICONDUCTOR STRUCTURE

FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING

THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

AIR GAPS IN MEMORY ARRAY STRUCTURES

SEMICONDUCTOR STRUCTURE HAVING EPITAXIAL STRUCTURE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Ferroelectric Device and Methods of Fabrication Thereof

THREE DIMENSIONAL MEMORY DEVICE

SEMICONDUCTOR CHIP

VERTICAL DRAM STRUCTURE AND METHOD

MEMORY DEVICE AND METHOD OF FORMING THE SAME

MEMORY DEVICE AND METHOD OF FORMING THE SAME

EMBEDDED FERROELECTRIC FINFET MEMORY DEVICE

SCALABLE PATTERNING THROUGH LAYER EXPANSION PROCESS AND RESULTING S...

SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR CHIP

SEMICONDUCTOR CHIP AND FABRICATION METHOD THEREOF

METHOD OF TESTING A MEMORY CIRCUIT AND MEMORY CIRCUIT

THIN FILM TRANSISTOR INCLUDING A COMPOSITIONALLY-MODULATED ACTIVE R...

DUAL-LAYER CHANNEL TRANSISTOR AND METHODS OF FORMING SAME

MEMORY DEVICE AND METHOD OF FORMING THE SAME

FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME

DOUBLE GATE METAL-FERROELECTRIC-METAL-INSULATOR-SEMICONDUCTOR FIELD...

NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING

THREE DIMENSIONAL METAL INSULATOR METAL CAPACITOR STRUCTURE

FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICE USING A MAGNESIUM OXIDE...