SALMAN LATIF

Person

Mountain View, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-planar semiconductor device having doped sub-fin region and met...
- Patent number 12,191,308
- Issue date Jan 7, 2025
- Tahoe Research, LTD.
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar semiconductor device having doped sub-fin region and met...
- Patent number 11,631,673
- Issue date Apr 18, 2023
- Tahoe Research, LTD.
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar semiconductor device having doped sub-fin region and met...
- Patent number 10,964,697
- Issue date Mar 30, 2021
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar semiconductor device having doped sub-fin region and met...
- Patent number 10,622,359
- Issue date Apr 14, 2020
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar semiconductor device having doped sub-fin region and met...
- Patent number 10,396,079
- Issue date Aug 27, 2019
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pulsed decision feedback equalization circuit
- Patent number 10,069,658
- Issue date Sep 4, 2018
- Intel Corporation
- Salman Latif
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Non-planar semiconductor device having doped sub-fin region and met...
- Patent number 10,056,380
- Issue date Aug 21, 2018
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NON-PLANAR SEMICONDUCTOR DEVICE HAVING DOPED SUB-FIN REGION AND MET...
- Publication number 20230223406
- Publication date Jul 13, 2023
- Tahoe Research, Ltd.
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR SEMICONDUCTOR DEVICE HAVING DOPED SUB-FIN REGION AND MET...
- Publication number 20210175233
- Publication date Jun 10, 2021
- Intel Corporation
- TAHIR GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR SEMICONDUCTOR DEVICE HAVING DOPED SUB-FIN REGION AND MET...
- Publication number 20200212039
- Publication date Jul 2, 2020
- Intel Corporation
- TAHIR GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR SEMICONDUCTOR DEVICE HAVING DOPED SUB-FIN REGION AND MET...
- Publication number 20190341383
- Publication date Nov 7, 2019
- Intel Corporation
- TAHIR GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR SEMICONDUCTOR DEVICE HAVING DOPED SUB-FIN REGION AND MET...
- Publication number 20190006362
- Publication date Jan 3, 2019
- Intel Corporation
- TAHIR GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PULSED DECISION FEEDBACK EQUALIZATION CIRCUIT
- Publication number 20170085399
- Publication date Mar 23, 2017
- Intel Corporation
- Salman Latif
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
NON-PLANAR SEMICONDUCTOR DEVICE HAVING DOPED SUB-FIN REGION AND MET...
- Publication number 20160056156
- Publication date Feb 25, 2016
- Intel Corporation
- TAHIR GHANI
- H01 - BASIC ELECTRIC ELEMENTS

SALMAN LATIF

Person

Patents Grantslast 30 patents

Non-planar semiconductor device having doped sub-fin region and met...

Non-planar semiconductor device having doped sub-fin region and met...

Non-planar semiconductor device having doped sub-fin region and met...

Non-planar semiconductor device having doped sub-fin region and met...

Non-planar semiconductor device having doped sub-fin region and met...

Pulsed decision feedback equalization circuit

Non-planar semiconductor device having doped sub-fin region and met...

Patents Applicationslast 30 patents

NON-PLANAR SEMICONDUCTOR DEVICE HAVING DOPED SUB-FIN REGION AND MET...

NON-PLANAR SEMICONDUCTOR DEVICE HAVING DOPED SUB-FIN REGION AND MET...

NON-PLANAR SEMICONDUCTOR DEVICE HAVING DOPED SUB-FIN REGION AND MET...

NON-PLANAR SEMICONDUCTOR DEVICE HAVING DOPED SUB-FIN REGION AND MET...

NON-PLANAR SEMICONDUCTOR DEVICE HAVING DOPED SUB-FIN REGION AND MET...

PULSED DECISION FEEDBACK EQUALIZATION CIRCUIT

NON-PLANAR SEMICONDUCTOR DEVICE HAVING DOPED SUB-FIN REGION AND MET...