Sameer H. Jain

Person

Beacon, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Third type of metal gate stack for CMOS devices
- Patent number 10,741,554
- Issue date Aug 11, 2020
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Third type of metal gate stack for CMOS devices
- Patent number 10,262,996
- Issue date Apr 16, 2019
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming uniform and pitch independent fin recess
- Patent number 9,875,939
- Issue date Jan 23, 2018
- GLOBALFOUNDRIES Inc.
- Yue Ke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin end spacer for preventing merger of raised active regions
- Patent number 9,679,993
- Issue date Jun 13, 2017
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Third type of metal gate stack for CMOS devices
- Patent number 9,634,006
- Issue date Apr 25, 2017
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin end spacer for preventing merger of raised active regions
- Patent number 9,601,380
- Issue date Mar 21, 2017
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unidirectional spacer in trench silicide
- Patent number 9,514,992
- Issue date Dec 6, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin end spacer for preventing merger of raised active regions
- Patent number 9,515,168
- Issue date Dec 6, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin end spacer for preventing merger of raised active regions
- Patent number 9,391,175
- Issue date Jul 12, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin end spacer for preventing merger of raised active regions
- Patent number 9,349,836
- Issue date May 24, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective dielectric spacer deposition for exposing sidewalls of a...
- Patent number 9,331,166
- Issue date May 3, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective dielectric spacer deposition for exposing sidewalls of a...
- Patent number 9,111,962
- Issue date Aug 18, 2015
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of functional gate structures with different critical dim...
- Patent number 8,951,868
- Issue date Feb 10, 2015
- International Business Machines Corporation
- Sameer H. Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-step silicide formation
- Patent number 8,652,914
- Issue date Feb 18, 2014
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-step silicide formation
- Patent number 8,647,954
- Issue date Feb 11, 2014
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal gate structure and methods of manufacture
- Patent number 8,642,424
- Issue date Feb 4, 2014
- International Business Machines Corporation
- Sameer H. Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-step silicide formation
- Patent number 8,629,510
- Issue date Jan 14, 2014
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate MOSFET with self-aligned diffusion contact
- Patent number 8,421,077
- Issue date Apr 16, 2013
- International Business Machines Corporation
- Sameer H. Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar silicide semiconductor structure
- Patent number 8,236,637
- Issue date Aug 7, 2012
- International Business Machines Corporation
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing embedded SiGe loss in semiconductor device manuf...
- Patent number 7,687,338
- Issue date Mar 30, 2010
- International Business Machines Corporation
- Sameer Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 7,615,435
- Issue date Nov 10, 2009
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scalable strained FET device and method of fabricating the same
- Patent number 7,538,339
- Issue date May 26, 2009
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THIRD TYPE OF METAL GATE STACK FOR CMOS DEVICES
- Publication number 20190206866
- Publication date Jul 4, 2019
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIRD TYPE OF METAL GATE STACK FOR CMOS DEVICES
- Publication number 20170229458
- Publication date Aug 10, 2017
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIDIRECTIONAL SPACER IN TRENCH SILICIDE
- Publication number 20160329251
- Publication date Nov 10, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS
- Publication number 20160284598
- Publication date Sep 29, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS
- Publication number 20160035875
- Publication date Feb 4, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS
- Publication number 20160035864
- Publication date Feb 4, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS
- Publication number 20160035876
- Publication date Feb 4, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DIELECTRIC SPACER DEPOSITION FOR EXPOSING SIDEWALLS OF A...
- Publication number 20150270365
- Publication date Sep 24, 2015
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIRD TYPE OF METAL GATE STACK FOR CMOS DEVICES
- Publication number 20150249086
- Publication date Sep 3, 2015
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS
- Publication number 20150200291
- Publication date Jul 16, 2015
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-STEP SILICIDE FORMATION
- Publication number 20130295765
- Publication date Nov 7, 2013
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-STEP SILICIDE FORMATION
- Publication number 20130153974
- Publication date Jun 20, 2013
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT METAL GATE STRUCTURE AND METHODS OF MANUFACTURE
- Publication number 20130015580
- Publication date Jan 17, 2013
- International Business Machines Corporation
- SAMEER H JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-STEP SILICIDE FORMATION
- Publication number 20120223372
- Publication date Sep 6, 2012
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Planar Silicide Semiconductor Structure
- Publication number 20120074503
- Publication date Mar 29, 2012
- International Business Machines Corporation
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE MOSFET WITH SELF-ALIGNED DIFFUSION CONTACT
- Publication number 20110298017
- Publication date Dec 8, 2011
- International Business Machines Corporation
- Sameer H. Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING GATE ELECTRODE FOR GATE OF MOSFET AND STRUCTU...
- Publication number 20090166770
- Publication date Jul 2, 2009
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS AND METHOD TO LOWER CONTACT RESISTANCE
- Publication number 20090146223
- Publication date Jun 11, 2009
- International Business Machines Corporation
- Sameer H. Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REDUCING EMBEDDED SIGE LOSS IN SEMICONDUCTOR DEVICE MANUF...
- Publication number 20090148988
- Publication date Jun 11, 2009
- International Business Machines Corporation
- Sameer Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20090032840
- Publication date Feb 5, 2009
- International Business Machines Corporation
- OLEG GLUSCHENKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALABLE STRAINED FET DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20080150033
- Publication date Jun 26, 2008
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LASER SURFACE ANNEALING OF ANTIMONY DOPED AMORPHIZED SEMICONDUCTOR...
- Publication number 20070212861
- Publication date Sep 13, 2007
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS

Sameer H. Jain

Person

Patents Grantslast 30 patents

Third type of metal gate stack for CMOS devices

Third type of metal gate stack for CMOS devices

Methods of forming uniform and pitch independent fin recess

Fin end spacer for preventing merger of raised active regions

Third type of metal gate stack for CMOS devices

Fin end spacer for preventing merger of raised active regions

Unidirectional spacer in trench silicide

Fin end spacer for preventing merger of raised active regions

Fin end spacer for preventing merger of raised active regions

Fin end spacer for preventing merger of raised active regions

Selective dielectric spacer deposition for exposing sidewalls of a...

Selective dielectric spacer deposition for exposing sidewalls of a...

Formation of functional gate structures with different critical dim...

Two-step silicide formation

Two-step silicide formation

Replacement metal gate structure and methods of manufacture

Two-step silicide formation

Replacement gate MOSFET with self-aligned diffusion contact

Planar silicide semiconductor structure

Method of reducing embedded SiGe loss in semiconductor device manuf...

Semiconductor device and method of manufacture

Scalable strained FET device and method of fabricating the same

Patents Applicationslast 30 patents

THIRD TYPE OF METAL GATE STACK FOR CMOS DEVICES

THIRD TYPE OF METAL GATE STACK FOR CMOS DEVICES

UNIDIRECTIONAL SPACER IN TRENCH SILICIDE

FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS

FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS

FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS

FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS

SELECTIVE DIELECTRIC SPACER DEPOSITION FOR EXPOSING SIDEWALLS OF A...

THIRD TYPE OF METAL GATE STACK FOR CMOS DEVICES

FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS

TWO-STEP SILICIDE FORMATION

TWO-STEP SILICIDE FORMATION

REPLACEMENT METAL GATE STRUCTURE AND METHODS OF MANUFACTURE

TWO-STEP SILICIDE FORMATION

Planar Silicide Semiconductor Structure

REPLACEMENT GATE MOSFET WITH SELF-ALIGNED DIFFUSION CONTACT

METHOD OF FABRICATING GATE ELECTRODE FOR GATE OF MOSFET AND STRUCTU...

PROCESS AND METHOD TO LOWER CONTACT RESISTANCE

METHOD OF REDUCING EMBEDDED SIGE LOSS IN SEMICONDUCTOR DEVICE MANUF...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

SCALABLE STRAINED FET DEVICE AND METHOD OF FABRICATING THE SAME

LASER SURFACE ANNEALING OF ANTIMONY DOPED AMORPHIZED SEMICONDUCTOR...