Sameer Pendharkar

Person

Allen, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 12,166,119
- Issue date Dec 10, 2024
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge guard ring with complementary drain extende...
- Patent number 12,094,970
- Issue date Sep 17, 2024
- Texas Instruments Incorporated
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride (GaN) based transistor with multiple p-GaN blocks
- Patent number 12,046,666
- Issue date Jul 23, 2024
- Texas Instruments Incorporated
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate trench field plate vertical MOSFET
- Patent number 12,034,074
- Issue date Jul 9, 2024
- Texas Instruments Incorporated
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superlattice photo detector
- Patent number 11,978,814
- Issue date May 7, 2024
- Texas Instruments Incorporated
- He Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 11,769,824
- Issue date Sep 26, 2023
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge guard ring with snapback protection
- Patent number 11,764,208
- Issue date Sep 19, 2023
- Texas Instruments Incorporated
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal oxide semiconductor with gate poly contact...
- Patent number 11,721,738
- Issue date Aug 8, 2023
- Texas Instmments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid active-field gap extended drain MOS transistor
- Patent number 11,482,613
- Issue date Oct 25, 2022
- Texas Instruments Incorporated
- Sameer P. Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain-extended transistor
- Patent number 11,456,381
- Issue date Sep 27, 2022
- Texas Instruments Incorporated
- Meng-Chia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with source field plates and non-overlapping gate runner...
- Patent number 11,355,597
- Issue date Jun 7, 2022
- Texas Instruments Incorporated
- Hiroyuki Tomomatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage lateral junction diode device
- Patent number 11,322,610
- Issue date May 3, 2022
- Texas Instruments Incorporated
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage drain expended MOS transistor
- Patent number 11,239,318
- Issue date Feb 1, 2022
- Texas Instruments Incorporated
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate trench field plate vertical MOSFET
- Patent number 11,189,721
- Issue date Nov 30, 2021
- Texas Instruments Incorporated
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT having conduction barrier between drain fingertip and source
- Patent number 11,177,378
- Issue date Nov 16, 2021
- Texas Instruments Incorporated
- Jungwoo Joh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superlattice photo detector
- Patent number 11,158,750
- Issue date Oct 26, 2021
- Texas Instruments Incorporated
- He Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral MOSFET with buried drain extension layer
- Patent number 11,152,459
- Issue date Oct 19, 2021
- Texas Instruments Incorporated
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT wafer probe current collapse screening
- Patent number 11,067,620
- Issue date Jul 20, 2021
- Texas Instruments Incorporated
- Dong Seup Lee
- G01 - MEASURING TESTING
Information Patent Grant
Gallium nitride (GaN) based transistor with multiple p-GaN blocks
- Patent number 11,049,960
- Issue date Jun 29, 2021
- Texas Instruments Incorporated
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor with gate structure having alternating regions of...
- Patent number 11,004,971
- Issue date May 11, 2021
- Texas Instruments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 10,964,803
- Issue date Mar 30, 2021
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal oxide semiconductor with gate poly contact...
- Patent number 10,957,774
- Issue date Mar 23, 2021
- Texas Instruments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge guard ring with complementary drain extende...
- Patent number 10,950,720
- Issue date Mar 16, 2021
- Texas Instruments Incorporated
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having double isolation with one floating isolation
- Patent number 10,937,905
- Issue date Mar 2, 2021
- Texas Instruments Incorporated
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with source field plates and non-overlapping gate runner...
- Patent number 10,903,320
- Issue date Jan 26, 2021
- Texas Instruments Incorporated
- Hiroyuki Tomomatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated trench capacitor
- Patent number 10,903,306
- Issue date Jan 26, 2021
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD guard ring with snapback protection and lateral buried layers
- Patent number 10,896,904
- Issue date Jan 19, 2021
- Texas Instruments Incorporated
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with multiple GaN-based alloy layers
- Patent number 10,861,943
- Issue date Dec 8, 2020
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate trench field plate vertical mosfet
- Patent number 10,811,530
- Issue date Oct 20, 2020
- Texas Instruments Incorporated
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage CMOS with triple gate oxide
- Patent number 10,714,474
- Issue date Jul 14, 2020
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRENCH GATE TRENCH FIELD PLATE VERTICAL MOSFET
- Publication number 20240304719
- Publication date Sep 12, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Marie DENISON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM RESISTOR MISMATCH IMPROVEMENT USING A SELF-ALIGNED DOUBLE...
- Publication number 20240113156
- Publication date Apr 4, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Scott William JESSEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE GUARD RING WITH SNAPBACK PROTECTION
- Publication number 20230395589
- Publication date Dec 7, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20230369482
- Publication date Nov 16, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD TO CONTROL THRESHOLD VOLTAGE AND GATE LEAKAGE...
- Publication number 20230134698
- Publication date May 4, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Jungwoo Joh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE GUARD RING WITH SNAPBACK PROTECTION
- Publication number 20230132375
- Publication date Apr 27, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR HAVING FRACTIONALLY ENHANCED BODY STRUCTURE
- Publication number 20230101610
- Publication date Mar 30, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Meng-Chia LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FINGER LAYOUT TRANSISTOR
- Publication number 20230061337
- Publication date Mar 2, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Jungwoo Joh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAIN-EXTENDED TRANSISTOR
- Publication number 20220190158
- Publication date Jun 16, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Meng-Chia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE TRENCH FIELD PLATE VERTICAL MOSFET
- Publication number 20220052195
- Publication date Feb 17, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Marie DENISON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERLATTICE PHOTO DETECTOR
- Publication number 20210408306
- Publication date Dec 30, 2021
- TEXAS INSTRUMENTS INCORPORATED
- He Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS
- Publication number 20210280702
- Publication date Sep 9, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Chang Soo SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Laterally Diffused Metal Oxide Semiconductor with Gate Poly Contact...
- Publication number 20210193809
- Publication date Jun 24, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE GUARD RING WITH COMPLEMENTARY DRAIN EXTENDE...
- Publication number 20210167206
- Publication date Jun 3, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20210159329
- Publication date May 27, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE GUARD RING WITH SNAPBACK PROTECTION
- Publication number 20210143145
- Publication date May 13, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH SOURCE FIELD PLATES AND NON-OVERLAPPING GATE RUNNER...
- Publication number 20210143258
- Publication date May 13, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Hiroyuki Tomomatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERLATTICE PHOTO DETECTOR
- Publication number 20210005763
- Publication date Jan 7, 2021
- TEXAS INSTRUMENTS INCORPORATED
- He Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE TRENCH FIELD PLATE VERTICAL MOSFET
- Publication number 20200381552
- Publication date Dec 3, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Marie DENISON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT HAVING CONDUCTION BARRIER BETWEEN DRAIN FINGERTIP AND SOURCE
- Publication number 20200303535
- Publication date Sep 24, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Jungwoo JOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS
- Publication number 20200287033
- Publication date Sep 10, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Chang Soo SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE DRAIN EXTENDED MOS TRANSISTOR
- Publication number 20200243647
- Publication date Jul 30, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH MULTIPLE GAN-BASED ALLOY LAYERS
- Publication number 20200185499
- Publication date Jun 11, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE LATERAL JUNCTION DIODE DEVICE
- Publication number 20200168733
- Publication date May 28, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Sunglyong Kim
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20200161461
- Publication date May 21, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL MOSFET WITH BURIED DRAIN EXTENSION LAYER
- Publication number 20200146945
- Publication date May 14, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Marie DENISON
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Application
ELECTROSTATIC DISCHARGE GUARD RING WITH SNAPBACK PROTECTION
- Publication number 20200075576
- Publication date Mar 5, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT WAFER PROBE CURRENT COLLAPSE SCREENING
- Publication number 20200064394
- Publication date Feb 27, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- G01 - MEASURING TESTING
Information Patent Application
GROUP IIIA-N HEMT WITH A TUNNEL DIODE IN THE GATE STACK
- Publication number 20190319111
- Publication date Oct 17, 2019
- TEXAS INSTRUMENTS INCORPORATED
- CHANG SOO SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE GUARD RING WITH SNAPBACK PROTECTION
- Publication number 20190279976
- Publication date Sep 12, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS

Sameer Pendharkar

Person

Patents Grantslast 30 patents

Gallium nitride transistor with a doped region

Electrostatic discharge guard ring with complementary drain extende...

Gallium nitride (GaN) based transistor with multiple p-GaN blocks

Trench gate trench field plate vertical MOSFET

Superlattice photo detector

Gallium nitride transistor with a doped region

Electrostatic discharge guard ring with snapback protection

Laterally diffused metal oxide semiconductor with gate poly contact...

Hybrid active-field gap extended drain MOS transistor

Drain-extended transistor

Transistor with source field plates and non-overlapping gate runner...

High voltage lateral junction diode device

High-voltage drain expended MOS transistor

Trench gate trench field plate vertical MOSFET

HEMT having conduction barrier between drain fingertip and source

Superlattice photo detector

Lateral MOSFET with buried drain extension layer

HEMT wafer probe current collapse screening

Gallium nitride (GaN) based transistor with multiple p-GaN blocks

LDMOS transistor with gate structure having alternating regions of...

Gallium nitride transistor with a doped region

Laterally diffused metal oxide semiconductor with gate poly contact...

Electrostatic discharge guard ring with complementary drain extende...

Transistor having double isolation with one floating isolation

Transistor with source field plates and non-overlapping gate runner...

Integrated trench capacitor

ESD guard ring with snapback protection and lateral buried layers

Transistor with multiple GaN-based alloy layers

Trench gate trench field plate vertical mosfet

High voltage CMOS with triple gate oxide

Patents Applicationslast 30 patents

TRENCH GATE TRENCH FIELD PLATE VERTICAL MOSFET

THIN FILM RESISTOR MISMATCH IMPROVEMENT USING A SELF-ALIGNED DOUBLE...

ELECTROSTATIC DISCHARGE GUARD RING WITH SNAPBACK PROTECTION

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

APPARATUS AND METHOD TO CONTROL THRESHOLD VOLTAGE AND GATE LEAKAGE...

ELECTROSTATIC DISCHARGE GUARD RING WITH SNAPBACK PROTECTION

FIELD-EFFECT TRANSISTOR HAVING FRACTIONALLY ENHANCED BODY STRUCTURE

HIGH VOLTAGE FINGER LAYOUT TRANSISTOR

DRAIN-EXTENDED TRANSISTOR

TRENCH GATE TRENCH FIELD PLATE VERTICAL MOSFET

SUPERLATTICE PHOTO DETECTOR

GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS

Laterally Diffused Metal Oxide Semiconductor with Gate Poly Contact...

ELECTROSTATIC DISCHARGE GUARD RING WITH COMPLEMENTARY DRAIN EXTENDE...

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

ELECTROSTATIC DISCHARGE GUARD RING WITH SNAPBACK PROTECTION

TRANSISTOR WITH SOURCE FIELD PLATES AND NON-OVERLAPPING GATE RUNNER...

SUPERLATTICE PHOTO DETECTOR

TRENCH GATE TRENCH FIELD PLATE VERTICAL MOSFET

HEMT HAVING CONDUCTION BARRIER BETWEEN DRAIN FINGERTIP AND SOURCE

GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS

HIGH-VOLTAGE DRAIN EXTENDED MOS TRANSISTOR

TRANSISTOR WITH MULTIPLE GAN-BASED ALLOY LAYERS

HIGH VOLTAGE LATERAL JUNCTION DIODE DEVICE

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

LATERAL MOSFET WITH BURIED DRAIN EXTENSION LAYER

ELECTROSTATIC DISCHARGE GUARD RING WITH SNAPBACK PROTECTION

HEMT WAFER PROBE CURRENT COLLAPSE SCREENING

GROUP IIIA-N HEMT WITH A TUNNEL DIODE IN THE GATE STACK

ELECTROSTATIC DISCHARGE GUARD RING WITH SNAPBACK PROTECTION