Samphy Hong

Person

Saratoga Springs, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
MOSFET gate shielding using an angled implant
- Patent number 12,183,794
- Issue date Dec 31, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-temperature implant for buried layer formation
- Patent number 12,087,585
- Issue date Sep 10, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside wafer dopant activation
- Patent number 12,046,473
- Issue date Jul 23, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channeled implants for SiC MOSFET fabrication
- Patent number 11,804,537
- Issue date Oct 31, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned trench MOSFET
- Patent number 11,798,982
- Issue date Oct 24, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implantation enabled precisely controlled source and drain etch depth
- Patent number 11,721,743
- Issue date Aug 8, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation to form trench-bottom oxide of MOSFET
- Patent number 11,695,060
- Issue date Jul 4, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation to control formation of MOSFET trench-bottom oxide
- Patent number 11,527,637
- Issue date Dec 13, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for increasing photoresist etch selectivity to enable high e...
- Patent number 11,527,412
- Issue date Dec 13, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate MOSFET with gate shield
- Patent number 11,437,488
- Issue date Sep 6, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming planar metal-oxide-semiconductor field-effect t...
- Patent number 11,387,338
- Issue date Jul 12, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELECTIVE WAVEGUIDE ION IMPLANTATION TO ADJUST LOCAL REFRACTIVE IND...
- Publication number 20240411085
- Publication date Dec 12, 2024
- Applied Materials, Inc.
- Qintao ZHANG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR FORMING HIGHLY UNIFORM DIELECTRIC FILM
- Publication number 20240145217
- Publication date May 2, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENDPOINT OPTIMIZATION FOR SEMICONDUCTOR PROCESSES
- Publication number 20240128131
- Publication date Apr 18, 2024
- Applied Materials, Inc.
- Avishay Vaxman
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ION IMPLANTATION TO INCREASE MOSFET THRESHOLD VOLTAGE
- Publication number 20230178373
- Publication date Jun 8, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET Gate Shielding Using an Angled Implant
- Publication number 20230040358
- Publication date Feb 9, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE WAFER DOPANT ACTIVATION
- Publication number 20220415656
- Publication date Dec 29, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-TEMPERATURE IMPLANT FOR BURIED LAYER FORMATION
- Publication number 20220415657
- Publication date Dec 29, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Channeled Implants For SiC MOSFET Fabrication
- Publication number 20220359710
- Publication date Nov 10, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED TRENCH MOSFET
- Publication number 20220344453
- Publication date Oct 27, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION TO CONTROL FORMATION OF MOSFET TRENCH-BOTTOM OXIDE
- Publication number 20220278221
- Publication date Sep 1, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING PLANAR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT T...
- Publication number 20220238674
- Publication date Jul 28, 2022
- Qintao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION TO FORM TRENCH-BOTTOM OXIDE OF MOSFET
- Publication number 20220199806
- Publication date Jun 23, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Implantation Enabled Precisely Controlled Source And Drain Etch Depth
- Publication number 20220199802
- Publication date Jun 23, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-GATE MOSFET WITH GATE SHIELD
- Publication number 20220165863
- Publication date May 26, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR INCREASING PHOTORESIST ETCH SELECTIVITY TO ENABLE HIGH E...
- Publication number 20220044939
- Publication date Feb 10, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Samphy Hong

Person

Patents Grantslast 30 patents

MOSFET gate shielding using an angled implant

Low-temperature implant for buried layer formation

Backside wafer dopant activation

Channeled implants for SiC MOSFET fabrication

Self-aligned trench MOSFET

Implantation enabled precisely controlled source and drain etch depth

Ion implantation to form trench-bottom oxide of MOSFET

Ion implantation to control formation of MOSFET trench-bottom oxide

Method for increasing photoresist etch selectivity to enable high e...

Split-gate MOSFET with gate shield

Methods for forming planar metal-oxide-semiconductor field-effect t...

Patents Applicationslast 30 patents

SELECTIVE WAVEGUIDE ION IMPLANTATION TO ADJUST LOCAL REFRACTIVE IND...

METHOD FOR FORMING HIGHLY UNIFORM DIELECTRIC FILM

ENDPOINT OPTIMIZATION FOR SEMICONDUCTOR PROCESSES

ION IMPLANTATION TO INCREASE MOSFET THRESHOLD VOLTAGE

MOSFET Gate Shielding Using an Angled Implant

BACKSIDE WAFER DOPANT ACTIVATION

LOW-TEMPERATURE IMPLANT FOR BURIED LAYER FORMATION

Channeled Implants For SiC MOSFET Fabrication

SELF-ALIGNED TRENCH MOSFET

ION IMPLANTATION TO CONTROL FORMATION OF MOSFET TRENCH-BOTTOM OXIDE

METHODS FOR FORMING PLANAR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT T...

ION IMPLANTATION TO FORM TRENCH-BOTTOM OXIDE OF MOSFET

Implantation Enabled Precisely Controlled Source And Drain Etch Depth

SPLIT-GATE MOSFET WITH GATE SHIELD

METHOD FOR INCREASING PHOTORESIST ETCH SELECTIVITY TO ENABLE HIGH E...