Samuel C. Ramac

Person

Wappingers Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
CMOS transistor with a polysilicon gate electrode having varying gr...
- Patent number 7,714,366
- Issue date May 11, 2010
- International Business Machines Corporation
- Arne W. Ballantine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing polysilicon depletion in a polysilicon gate elec...
- Patent number 6,893,948
- Issue date May 17, 2005
- International Business Machines Corporation
- Arne W. Ballantine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate SiGe HBTs with controlled current gain and impr...
- Patent number 6,787,427
- Issue date Sep 7, 2004
- International Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing polysilicon depletion in a polysilicon gate elec...
- Patent number 6,670,263
- Issue date Dec 30, 2003
- International Business Machines Corporation
- Arne W. Ballantine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate SiGe HBTs with controlled current gain and impr...
- Patent number 6,656,809
- Issue date Dec 2, 2003
- International Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a titanium resistor
- Patent number 5,899,724
- Issue date May 4, 1999
- International Business Machines Corporation
- David Mark Dobuzinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Application of thin crystalline Si.sub.3 N.sub.4 liners in shallow...
- Patent number 5,747,866
- Issue date May 5, 1998
- Siemens Aktiengesellschaft
- Herbert Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Application of thin crystalline Si.sub.3 N.sub.4 liners in shallow...
- Patent number 5,643,823
- Issue date Jul 1, 1997
- Siemens Aktiengesellschaft
- Herbert Ho
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CMOS TRANSISTOR WITH A POLYSILICON GATE ELECTRODE HAVING VARYING GR...
- Publication number 20050110096
- Publication date May 26, 2005
- International Business Machines Corporation
- Arne W. Ballantine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to fabricate SiGe HBTs with controlled current gain and impr...
- Publication number 20040063293
- Publication date Apr 1, 2004
- International Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of reducing polysilicon depletion in a polysilicon gate elec...
- Publication number 20040023476
- Publication date Feb 5, 2004
- International Business Machines
- Arne W. Ballantine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to fabricate SiGe HBTs with controlled current gain and impr...
- Publication number 20030132453
- Publication date Jul 17, 2003
- International Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of notched gate using a multi-layer stack
- Publication number 20020155665
- Publication date Oct 24, 2002
- International Business Machines Corporation,
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of reducing polysilicon depletion in a polysilicon gate elec...
- Publication number 20020149064
- Publication date Oct 17, 2002
- Arne W. Ballantine
- H01 - BASIC ELECTRIC ELEMENTS

Samuel C. Ramac

Person

Patents Grantslast 30 patents

CMOS transistor with a polysilicon gate electrode having varying gr...

Method of reducing polysilicon depletion in a polysilicon gate elec...

Method to fabricate SiGe HBTs with controlled current gain and impr...

Method of reducing polysilicon depletion in a polysilicon gate elec...

Method to fabricate SiGe HBTs with controlled current gain and impr...

Method for fabricating a titanium resistor

Application of thin crystalline Si.sub.3 N.sub.4 liners in shallow...

Application of thin crystalline Si.sub.3 N.sub.4 liners in shallow...

Patents Applicationslast 30 patents

CMOS TRANSISTOR WITH A POLYSILICON GATE ELECTRODE HAVING VARYING GR...

Method to fabricate SiGe HBTs with controlled current gain and impr...

Method of reducing polysilicon depletion in a polysilicon gate elec...

Method to fabricate SiGe HBTs with controlled current gain and impr...

Formation of notched gate using a multi-layer stack

Method of reducing polysilicon depletion in a polysilicon gate elec...