Samuel J. Anderson

Person

Tempe, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with oxide-nitride stack
- Patent number 11,935,839
- Issue date Mar 19, 2024
- Icemos Technology Corporation
- Kiraneswar Muthuseenu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation hardened high voltage superjunction MOSFET
- Patent number 11,757,001
- Issue date Sep 12, 2023
- IceMos Technology Limited
- Kiraneswar Muthuseenu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming low voltage power MOSFET...
- Patent number 11,545,565
- Issue date Jan 3, 2023
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation hardened high voltage superjunction MOSFET
- Patent number 11,362,179
- Issue date Jun 14, 2022
- IceMos Technology Ltd.
- Kiraneswar Muthuseenu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with oxide-nitride stack
- Patent number 11,362,042
- Issue date Jun 14, 2022
- Icemos Technology Corporation
- Kiraneswar Muthuseenu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with reduced resistance
- Patent number 10,707,327
- Issue date Jul 7, 2020
- Great Wall Semiconductor Corporation
- Patrick M. Shea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction with surrounding lightly doped drain region
- Patent number 10,199,459
- Issue date Feb 5, 2019
- Great Wall Semiconductor Corporation
- Patrick M. Shea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming a power MOSFET with inte...
- Patent number 9,640,638
- Issue date May 2, 2017
- Great Wall Semiconductor Corporation
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming superjunction high voltage devices using wafer bo...
- Patent number 9,461,109
- Issue date Oct 4, 2016
- Icemos Technology, Ltd.
- Takeshi Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device structure and methods of forming superjunction lateral power...
- Patent number 9,299,774
- Issue date Mar 29, 2016
- Great Wall Semiconductor Corporation
- Patrick M. Shea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing superjunction devices
- Patent number 9,147,751
- Issue date Sep 29, 2015
- Icemos Technology Ltd.
- Samuel Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic MOSFET and Schottky diode for mobile phone boost converter
- Patent number 9,018,706
- Issue date Apr 28, 2015
- Great Wall Semiconductor Corporation
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming a power MOSFET with inte...
- Patent number 9,006,099
- Issue date Apr 14, 2015
- Great Wall Semiconductor Corporation
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
800 V superjunction device
- Patent number 8,963,239
- Issue date Feb 24, 2015
- Icemos Technology, Ltd.
- Samuel Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction devices having narrow surface layout of terminal stru...
- Patent number 8,946,814
- Issue date Feb 3, 2015
- Icemos Technology Ltd.
- Samuel Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming high voltage SOI lateral...
- Patent number 8,921,186
- Issue date Dec 30, 2014
- Great Wall Semiconductor Corporation
- Patrick M. Shea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device comprising a land grid arra...
- Patent number 8,895,430
- Issue date Nov 25, 2014
- Great Wall Semiconductor Corporation
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with sealed, unlined trenches and methods of...
- Patent number 8,736,019
- Issue date May 27, 2014
- Icemos Technology Ltd.
- Samuel Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with sealed, unlined trenches and methods of...
- Patent number 8,716,829
- Issue date May 6, 2014
- Icemos Technology Ltd.
- Samuel Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming low voltage MOSFET for p...
- Patent number 8,138,558
- Issue date Mar 20, 2012
- Great Wall Semiconductor Corporation
- Patrick M. Shea
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor devices with sealed, unlined trenches and methods of...
- Patent number 8,129,252
- Issue date Mar 6, 2012
- Icemos Technology Ltd.
- Samuel Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with sealed, unlined trenches and methods of...
- Patent number 7,944,018
- Issue date May 17, 2011
- Icemos Technology Ltd.
- Samuel Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral power semiconductor device for high frequency power convers...
- Patent number 7,842,568
- Issue date Nov 30, 2010
- Great Wall Semiconductor Corporation
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chip-scale monolithic load switch for portable applications
- Patent number 7,800,223
- Issue date Sep 21, 2010
- Great Wall Semiconductor Corporation
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation hardened lateral MOSFET structure
- Patent number 7,649,247
- Issue date Jan 19, 2010
- Great Wall Semiconductor Corporation
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bi-directional MOSFET power switch with single metal layer
- Patent number 7,605,435
- Issue date Oct 20, 2009
- Great Wall Semiconductor Corporation
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating multi-chip packages
- Patent number 5,786,230
- Issue date Jul 28, 1998
- Motorola, Inc.
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical isolator having leadframe with non-planar mounting portions
- Patent number 5,751,009
- Issue date May 12, 1998
- Motorola, Inc.
- Samuel J. Anderson
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Metal matrix composite power dissipation apparatus
- Patent number 5,666,269
- Issue date Sep 9, 1997
- Motorola, Inc.
- Guillermo L. Romero
- F28 - HEAT EXCHANGE IN GENERAL
Information Patent Grant
Wirebondless module package
- Patent number 5,616,886
- Issue date Apr 1, 1997
- Motorola
- Guillermo L. Romero
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Radiation Hardened High Voltage Superjunction MOSFET
- Publication number 20230369403
- Publication date Nov 16, 2023
- IceMos Technology Limited
- Kiraneswar Muthuseenu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Power MOSFET on Partial SOI
- Publication number 20230207568
- Publication date Jun 29, 2023
- IceMos Technology Limited
- Takeshi Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming MOSFET Optimized for RDS...
- Publication number 20230154977
- Publication date May 18, 2023
- IceMos Technology Limited
- Takeshi Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming Charge Balanced Power MO...
- Publication number 20230154976
- Publication date May 18, 2023
- IceMos Technology Limited
- Takeshi Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming Radiation Hardened Subst...
- Publication number 20230060866
- Publication date Mar 2, 2023
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Super-Junction MOSFET/IGBT with MEMS Layer Transfer and WBG Drain
- Publication number 20230065348
- Publication date Mar 2, 2023
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Breakdown Voltage, Low RDSON Electrical Component with Dissimi...
- Publication number 20230067511
- Publication date Mar 2, 2023
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Direct Wafer Bonding Between Sem...
- Publication number 20230064236
- Publication date Mar 2, 2023
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Providing Rad Hard Power Transis...
- Publication number 20230061775
- Publication date Mar 2, 2023
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming Sacrificial Heteroepitax...
- Publication number 20230061047
- Publication date Mar 2, 2023
- IceMos Technology Limited
- Aymeric Privat
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Radiation Hardened High Voltage Superjunction MOSFET
- Publication number 20220293733
- Publication date Sep 15, 2022
- IceMos Technology Limited
- Kiraneswar Muthuseenu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Oxide-Nitride Stack
- Publication number 20220293531
- Publication date Sep 15, 2022
- Icemos Technology Corporation
- Kiraneswar MUTHUSEENU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming Low Voltage Power Mosfet...
- Publication number 20220123134
- Publication date Apr 21, 2022
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIATION HARDENED HIGH VOLTAGE SUPERJUNCTION MOSFET
- Publication number 20220028973
- Publication date Jan 27, 2022
- ICEMOS TECHNOLOGY LTD.
- Kiraneswar Muthuseenu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH OXIDE-NITRIDE STACK
- Publication number 20210233864
- Publication date Jul 29, 2021
- Icemos Technology Corporation
- Kiraneswar MUTHUSEENU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSUPERJUNCTION WITH SURROUNDING LIGHTLY DOPED DRAIN REGION
- Publication number 20190165093
- Publication date May 30, 2019
- Renesas Electronics America Inc.
- Patrick M. SHEA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET with Reduced Resistance
- Publication number 20160308015
- Publication date Oct 20, 2016
- Great Wall Semiconductor Corporation
- Patrick M. Shea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SUPERJUNCTION HIGH VOLTAGE DEVICES USING WAFER BO...
- Publication number 20160268367
- Publication date Sep 15, 2016
- ICEMOS TECHNOLOGY LTD.
- Takeshi ISHIGURO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Superjunction with Surrounding Lightly Doped Drain Region
- Publication number 20160211365
- Publication date Jul 21, 2016
- Great Wall Semiconductor Corporation
- Patrick M. Shea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERJUNCTION DEVICES HAVING NARROW SURFACE LAYOUT OF TERMINAL STRU...
- Publication number 20150111354
- Publication date Apr 23, 2015
- ICEMOS TECHNOLOGY LTD.
- Samuel ANDERSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device Structure and Methods of Forming Superjunction Lateral Power...
- Publication number 20150021686
- Publication date Jan 22, 2015
- Great Wall Semiconductor Corporation
- Patrick M. Shea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
800 V SUPERJUNCTION DEVICE
- Publication number 20140264582
- Publication date Sep 18, 2014
- ICEMOS TECHNOLOGY LTD.
- Samuel ANDERSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Monolithic MOSFET and Schottky Diode for Mobile Phone Boost Converter
- Publication number 20140231901
- Publication date Aug 21, 2014
- Great Wall Semiconductor Corporation
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERJUNCTION DEVICES HAVING NARROW SURFACE LAYOUT OF TERMINAL STRU...
- Publication number 20130299900
- Publication date Nov 14, 2013
- Samuel ANDERSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming a Power MOSFET With Inte...
- Publication number 20130134598
- Publication date May 30, 2013
- Great Wall Semiconductor Corporation
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming Substrate With Seated Pl...
- Publication number 20130015569
- Publication date Jan 17, 2013
- Great Wall Semiconductor Corporation
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming a Power MOSFET With Inte...
- Publication number 20120313147
- Publication date Dec 13, 2012
- Great Wall Semiconductor Corporation
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming a Land Grid Array Flip C...
- Publication number 20120248601
- Publication date Oct 4, 2012
- Great Wall Semiconductor Corporation
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral Power MOSFET With Integrated Schottky Diode
- Publication number 20120205740
- Publication date Aug 16, 2012
- Great Wall Semiconductor Corporation
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming Low Voltage MOSFET for P...
- Publication number 20120161248
- Publication date Jun 28, 2012
- Great Wall Semiconductor Corporation
- Patrick M. Shea
- H01 - BASIC ELECTRIC ELEMENTS

Samuel J. Anderson

Person

Patents Grantslast 30 patents

Semiconductor device with oxide-nitride stack

Radiation hardened high voltage superjunction MOSFET

Semiconductor device and method of forming low voltage power MOSFET...

Radiation hardened high voltage superjunction MOSFET

Semiconductor device with oxide-nitride stack

MOSFET with reduced resistance

Superjunction with surrounding lightly doped drain region

Semiconductor device and method of forming a power MOSFET with inte...

Method of forming superjunction high voltage devices using wafer bo...

Device structure and methods of forming superjunction lateral power...

Methods of manufacturing superjunction devices

Monolithic MOSFET and Schottky diode for mobile phone boost converter

Semiconductor device and method of forming a power MOSFET with inte...

800 V superjunction device

Superjunction devices having narrow surface layout of terminal stru...

Semiconductor device and method of forming high voltage SOI lateral...

Method of making a semiconductor device comprising a land grid arra...

Semiconductor devices with sealed, unlined trenches and methods of...

Semiconductor devices with sealed, unlined trenches and methods of...

Semiconductor device and method of forming low voltage MOSFET for p...

Semiconductor devices with sealed, unlined trenches and methods of...

Semiconductor devices with sealed, unlined trenches and methods of...

Lateral power semiconductor device for high frequency power convers...

Chip-scale monolithic load switch for portable applications

Radiation hardened lateral MOSFET structure

Bi-directional MOSFET power switch with single metal layer

Method of fabricating multi-chip packages

Optical isolator having leadframe with non-planar mounting portions

Metal matrix composite power dissipation apparatus

Wirebondless module package

Patents Applicationslast 30 patents

Radiation Hardened High Voltage Superjunction MOSFET

Semiconductor Device and Method for Power MOSFET on Partial SOI

Semiconductor Device and Method of Forming MOSFET Optimized for RDS...

Semiconductor Device and Method of Forming Charge Balanced Power MO...

Semiconductor Device and Method of Forming Radiation Hardened Subst...

Super-Junction MOSFET/IGBT with MEMS Layer Transfer and WBG Drain

High-Breakdown Voltage, Low RDSON Electrical Component with Dissimi...

Semiconductor Device and Method of Direct Wafer Bonding Between Sem...

Semiconductor Device and Method of Providing Rad Hard Power Transis...

Semiconductor Device and Method of Forming Sacrificial Heteroepitax...

Radiation Hardened High Voltage Superjunction MOSFET

Semiconductor Device with Oxide-Nitride Stack

Semiconductor Device and Method of Forming Low Voltage Power Mosfet...

RADIATION HARDENED HIGH VOLTAGE SUPERJUNCTION MOSFET

SEMICONDUCTOR DEVICE WITH OXIDE-NITRIDE STACK

INSUPERJUNCTION WITH SURROUNDING LIGHTLY DOPED DRAIN REGION

MOSFET with Reduced Resistance

METHOD OF FORMING SUPERJUNCTION HIGH VOLTAGE DEVICES USING WAFER BO...

Superjunction with Surrounding Lightly Doped Drain Region

SUPERJUNCTION DEVICES HAVING NARROW SURFACE LAYOUT OF TERMINAL STRU...

Device Structure and Methods of Forming Superjunction Lateral Power...

800 V SUPERJUNCTION DEVICE

Monolithic MOSFET and Schottky Diode for Mobile Phone Boost Converter

SUPERJUNCTION DEVICES HAVING NARROW SURFACE LAYOUT OF TERMINAL STRU...

Semiconductor Device and Method of Forming a Power MOSFET With Inte...

Semiconductor Device and Method of Forming Substrate With Seated Pl...

Semiconductor Device and Method of Forming a Power MOSFET With Inte...

Semiconductor Device and Method of Forming a Land Grid Array Flip C...

Lateral Power MOSFET With Integrated Schottky Diode

Semiconductor Device and Method of Forming Low Voltage MOSFET for P...