Samuele Sciarrillo

Person

Milano, IT

People

Patents Grantslast 30 patents

Information Patent Grant
Cross-point memory and methods for fabrication of same
- Patent number 11,011,579
- Issue date May 18, 2021
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory and methods for fabrication of same
- Patent number 10,910,437
- Issue date Feb 2, 2021
- Micron Technology, Inc.
- Ombretta Donghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with independently-sized elements
- Patent number 10,886,332
- Issue date Jan 5, 2021
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory and methods for fabrication of same
- Patent number 10,854,675
- Issue date Dec 1, 2020
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with independently-sized electrode
- Patent number 10,777,743
- Issue date Sep 15, 2020
- Micron Technology, Inc.
- Marcello Ravasio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with independently-sized elements
- Patent number 10,573,689
- Issue date Feb 25, 2020
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory and methods for fabrication of same
- Patent number 10,439,001
- Issue date Oct 8, 2019
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory and methods for fabrication of same
- Patent number 10,367,033
- Issue date Jul 30, 2019
- Micron Technology, Inc.
- Ombretta Donghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with independently-sized elements
- Patent number 10,163,978
- Issue date Dec 25, 2018
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory and methods for fabrication of same
- Patent number 10,157,965
- Issue date Dec 18, 2018
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory and methods for fabrication of same
- Patent number 10,084,016
- Issue date Sep 25, 2018
- Micron Technology, Inc.
- Ombretta Donghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with independently-sized electrode
- Patent number 9,831,428
- Issue date Nov 28, 2017
- Micron Technology, Inc.
- Marcello Ravasio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory and methods for fabrication of same
- Patent number 9,806,129
- Issue date Oct 31, 2017
- Micron Technology, Inc.
- Marcello Ravasio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell array structures and methods of forming the same
- Patent number 9,773,844
- Issue date Sep 26, 2017
- Micron Technology, Inc.
- Marcello Ravasio
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with independently-sized elements
- Patent number 9,640,588
- Issue date May 2, 2017
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory and methods for fabrication of same
- Patent number 9,577,010
- Issue date Feb 21, 2017
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming interconnections between top electrodes in memo...
- Patent number 9,443,763
- Issue date Sep 13, 2016
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with independently-sized electrode
- Patent number 9,257,431
- Issue date Feb 9, 2016
- Micron Technology, Inc.
- Marcello Ravasio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell array structures and methods of forming the same
- Patent number 9,246,100
- Issue date Jan 26, 2016
- Micron Technology, Inc.
- Marcello Ravasio
- G11 - INFORMATION STORAGE
Information Patent Grant
Avoiding degradation of chalcogenide material during definition of...
- Patent number 8,623,697
- Issue date Jan 7, 2014
- Micron Technology, Inc.
- Michele Magistretti
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY CELL WITH INDEPENDENTLY-SIZED ELEMENTS
- Publication number 20200144329
- Publication date May 7, 2020
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME
- Publication number 20200027926
- Publication date Jan 23, 2020
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME
- Publication number 20190355789
- Publication date Nov 21, 2019
- Micron Technology, Inc.
- Ombretta Donghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH INDEPENDENTLY-SIZED ELEMENTS
- Publication number 20190109176
- Publication date Apr 11, 2019
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME
- Publication number 20190067372
- Publication date Feb 28, 2019
- Micron Technology, Inc.
- Ombretta Donghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME
- Publication number 20190013359
- Publication date Jan 10, 2019
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME
- Publication number 20180138242
- Publication date May 17, 2018
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH INDEPENDENTLY-SIZED ELECTRODE
- Publication number 20180047896
- Publication date Feb 15, 2018
- Micron Technology, Inc.
- Marcello Ravasio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH INDEPENDENTLY-SIZED ELEMENTS
- Publication number 20170207273
- Publication date Jul 20, 2017
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME
- Publication number 20170186816
- Publication date Jun 29, 2017
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL ARRAY STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20160104748
- Publication date Apr 14, 2016
- Marcello Ravasio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH INDEPENDENTLY-SIZED ELECTRODE
- Publication number 20160104837
- Publication date Apr 14, 2016
- Micron Technology, Inc.
- Marcello Ravasio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH INDEPENDENTLY-SIZED ELEMENTS
- Publication number 20160020256
- Publication date Jan 21, 2016
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME
- Publication number 20150243885
- Publication date Aug 27, 2015
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME
- Publication number 20150243708
- Publication date Aug 27, 2015
- Micron Technology, Inc.
- Marcello Ravasio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME
- Publication number 20150137061
- Publication date May 21, 2015
- Micron Technology, Inc.
- Ombretta Donghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH INDEPENDENTLY-SIZED ELECTRODE
- Publication number 20150084156
- Publication date Mar 26, 2015
- Micron Technology, Inc.
- Marcello Ravasio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL FORMED BY IMPROVED CMP PROCESS
- Publication number 20150069630
- Publication date Mar 12, 2015
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL ARRAY STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20150029775
- Publication date Jan 29, 2015
- Micron Technology, Inc.
- Marcello Ravasio
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL WITH INDEPENDENTLY-SIZED ELEMENTS
- Publication number 20150028280
- Publication date Jan 29, 2015
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVOIDING DEGRADATION OF CHALCOGENIDE MATERIAL DURING DEFINITION OF...
- Publication number 20120001145
- Publication date Jan 5, 2012
- Michele Magistretti
- H01 - BASIC ELECTRIC ELEMENTS

Samuele Sciarrillo

Person

Patents Grantslast 30 patents

Cross-point memory and methods for fabrication of same

Cross-point memory and methods for fabrication of same

Memory cell with independently-sized elements

Cross-point memory and methods for fabrication of same

Memory cell with independently-sized electrode

Memory cell with independently-sized elements

Cross-point memory and methods for fabrication of same

Cross-point memory and methods for fabrication of same

Memory cell with independently-sized elements

Cross-point memory and methods for fabrication of same

Cross-point memory and methods for fabrication of same

Memory cell with independently-sized electrode

Cross-point memory and methods for fabrication of same

Memory cell array structures and methods of forming the same

Memory cell with independently-sized elements

Cross-point memory and methods for fabrication of same

Methods for forming interconnections between top electrodes in memo...

Memory cell with independently-sized electrode

Memory cell array structures and methods of forming the same

Avoiding degradation of chalcogenide material during definition of...

Patents Applicationslast 30 patents

MEMORY CELL WITH INDEPENDENTLY-SIZED ELEMENTS

CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME

CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME

MEMORY CELL WITH INDEPENDENTLY-SIZED ELEMENTS

CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME

CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME

CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME

MEMORY CELL WITH INDEPENDENTLY-SIZED ELECTRODE

MEMORY CELL WITH INDEPENDENTLY-SIZED ELEMENTS

CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME

MEMORY CELL ARRAY STRUCTURES AND METHODS OF FORMING THE SAME

MEMORY CELL WITH INDEPENDENTLY-SIZED ELECTRODE

MEMORY CELL WITH INDEPENDENTLY-SIZED ELEMENTS

CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME

CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME

CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME

MEMORY CELL WITH INDEPENDENTLY-SIZED ELECTRODE

MEMORY CELL FORMED BY IMPROVED CMP PROCESS

MEMORY CELL ARRAY STRUCTURES AND METHODS OF FORMING THE SAME

MEMORY CELL WITH INDEPENDENTLY-SIZED ELEMENTS

AVOIDING DEGRADATION OF CHALCOGENIDE MATERIAL DURING DEFINITION OF...