Sanaz K. Gardner

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Microelectronic devices having air gap structures integrated with i...
- Patent number 12,148,690
- Issue date Nov 19, 2024
- Tahoe Research, LTD.
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer crystalline back gated thin film transistor
- Patent number 12,119,409
- Issue date Oct 15, 2024
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer crystalline back gated thin film transistor
- Patent number 11,764,306
- Issue date Sep 19, 2023
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ingaas epi structure and wet etch process for enabling III-v GAA in...
- Patent number 11,631,737
- Issue date Apr 18, 2023
- Intel Corporation
- Sanaz K. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microelectronic devices having air gap structures integrated with i...
- Patent number 11,587,862
- Issue date Feb 21, 2023
- Tahoe Research, LTD.
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride (GaN) transistor structures on a substrate
- Patent number 11,195,944
- Issue date Dec 7, 2021
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N epitaxial device structures on free standing silicon mesas
- Patent number 11,177,376
- Issue date Nov 16, 2021
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer crystalline back gated thin film transistor
- Patent number 11,152,514
- Issue date Oct 19, 2021
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack design for GaN e-mode transistor performance
- Patent number 11,114,556
- Issue date Sep 7, 2021
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for monolithic co-integration of polycrystalline thin-fi...
- Patent number 11,056,532
- Issue date Jul 6, 2021
- Intel Corporation
- Han Wui Then
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Laterally adjacent and diverse group III-N transistors
- Patent number 11,031,305
- Issue date Jun 8, 2021
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate for a transistor
- Patent number 11,004,982
- Issue date May 11, 2021
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microelectronic devices having air gap structures integrated with i...
- Patent number 10,998,260
- Issue date May 4, 2021
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wurtzite heteroepitaxial structures with inclined sidewall facets f...
- Patent number 10,930,500
- Issue date Feb 23, 2021
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ge NANO wire transistor with GAAS as the sacrificial layer
- Patent number 10,930,766
- Issue date Feb 23, 2021
- Intel Corporation
- Willy Rachmady
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device with released source and drain
- Patent number 10,903,364
- Issue date Jan 26, 2021
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-N MEMS structures on a group IV substrate
- Patent number 10,850,977
- Issue date Dec 1, 2020
- Intel Corporation
- Han Wui Then
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Semiconductor device having metallic source and drain regions
- Patent number 10,847,653
- Issue date Nov 24, 2020
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire transistors with embedded dielectric spacers
- Patent number 10,840,352
- Issue date Nov 17, 2020
- Intel Corporation
- Willy Rachmady
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Geometric manipulation of 2DEG region in source/drain extension of...
- Patent number 10,804,359
- Issue date Oct 13, 2020
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack design for GaN e-mode transistor performance
- Patent number 10,804,386
- Issue date Oct 13, 2020
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to achieve a uniform Group IV material layer in an aspect ra...
- Patent number 10,784,352
- Issue date Sep 22, 2020
- Intel Corporation
- Sanaz K. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-channel gallium nitride transistors
- Patent number 10,756,183
- Issue date Aug 25, 2020
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with raised doped crystalline structures
- Patent number 10,665,708
- Issue date May 26, 2020
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-integrated III-N voltage regulator and RF power amplifier for en...
- Patent number 10,665,577
- Issue date May 26, 2020
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V finfet transistor with V-groove S/D profile for improved acce...
- Patent number 10,644,137
- Issue date May 5, 2020
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors including retracted raised source/drain to reduce paras...
- Patent number 10,622,448
- Issue date Apr 14, 2020
- Intel Corproation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors having ultra thin fin profiles and their methods of fab...
- Patent number 10,593,785
- Issue date Mar 17, 2020
- Intel Corporation
- Sanaz K. Gardner
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Wide band gap transistors on non-native semiconductor substrates
- Patent number 10,580,895
- Issue date Mar 3, 2020
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Envelope-tracking control techniques for highly-efficient RF power...
- Patent number 10,574,187
- Issue date Feb 25, 2020
- Intel Corporation
- Han Wui Then
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
MULTI-LAYER CRYSTALLINE BACK GATED THIN FILM TRANSISTOR
- Publication number 20230352598
- Publication date Nov 2, 2023
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICES HAVING AIR GAP STRUCTURES INTEGRATED WITH I...
- Publication number 20230207446
- Publication date Jun 29, 2023
- Tahoe Research, Ltd.
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER CRYSTALLINE BACK GATED THIN FILM TRANSISTOR
- Publication number 20210408299
- Publication date Dec 30, 2021
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICES HAVING AIR GAP STRUCTURES INTEGRATED WITH I...
- Publication number 20210202374
- Publication date Jul 1, 2021
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK DESIGN FOR GAN E-MODE TRANSISTOR PERFORMANCE
- Publication number 20200403092
- Publication date Dec 24, 2020
- Intel Corporation
- SANSAPTAK DASGUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER CRYSTALLINE BACK GATED THIN FILM TRANSISTOR
- Publication number 20200357929
- Publication date Nov 12, 2020
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE TRANSISTORS WITH EMBEDDED DIELECTRIC SPACERS
- Publication number 20200168703
- Publication date May 28, 2020
- Intel Corporation
- Willy Rachmady
- B82 - NANO-TECHNOLOGY
Information Patent Application
TECHNIQUES FOR MONOLITHIC CO-INTEGRATION OF POLYCRYSTALLINE THIN-FI...
- Publication number 20200119087
- Publication date Apr 16, 2020
- Intel Corporation
- HAN WUI THEN
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
GATE FOR A TRANSISTOR
- Publication number 20200027883
- Publication date Jan 23, 2020
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICES HAVING AIR GAP STRUCTURES INTEGRATED WITH I...
- Publication number 20190304896
- Publication date Oct 3, 2019
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WURTZITE HETEROEPITAXIAL STRUCTURES WITH INCLINED SIDEWALL FACETS F...
- Publication number 20190287789
- Publication date Sep 19, 2019
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY ADJACENT AND DIVERSE GROUP III-N TRANSISTORS
- Publication number 20190287858
- Publication date Sep 19, 2019
- Intel Corporation
- SANSAPTAK DASGUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK DESIGN FOR GAN E-MODE TRANSISTOR PERFORMANCE
- Publication number 20190221660
- Publication date Jul 18, 2019
- Intel Corporation
- SANSAPTAK DASGUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GEOMETRIC MANIPULATION OF 2DEG REGION IN SOURCE/DRAIN EXTENSION OF...
- Publication number 20190214464
- Publication date Jul 11, 2019
- Intel Corporation
- MARKO RADOSAVLJEVIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GE NANO WIRE TRANSISTOR WITH GAAS AS THE SACRIFICIAL LAYER
- Publication number 20190189770
- Publication date Jun 20, 2019
- Intel Corporation
- Willy RACHMADY
- B82 - NANO-TECHNOLOGY
Information Patent Application
III-N EPITAXIAL DEVICE STRUCTURES ON FREE STANDING SILICON MESAS
- Publication number 20190172938
- Publication date Jun 6, 2019
- Intel Corporation
- Sansaptak DASGUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH RELEASED SOURCE AND DRAIN
- Publication number 20190172941
- Publication date Jun 6, 2019
- Intel Corporation
- Willy RACHMADY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V FINFET TRANSISTOR WITH V-GROOVE S/D PROFILE FOR IMPROVED ACCE...
- Publication number 20190148512
- Publication date May 16, 2019
- Intel Corporation
- Willy RACHMADY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH RAISED DOPED CRYSTALLINE STRUCTURES
- Publication number 20190148533
- Publication date May 16, 2019
- Intel Corporation
- MARKO RADOSAVLJEVIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER EDGE PROTECTION FOR CRACK-FREE MATERIAL GROWTH
- Publication number 20190067081
- Publication date Feb 28, 2019
- Intel Corporation
- Sanaz K. GARDNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS INCLUDING RETRACTED RAISED SOURCE/DRAIN TO REDUCE PARAS...
- Publication number 20190058042
- Publication date Feb 21, 2019
- Intel Corporation
- HAN WUI THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-CHANNEL GALLIUM NITRIDE TRANSISTORS
- Publication number 20180350911
- Publication date Dec 6, 2018
- Intel Corporation
- HAN WUI THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENVELOPE-TRACKING CONTROL TECHNIQUES FOR HIGHLY-EFFICIENT RF POWER...
- Publication number 20180342985
- Publication date Nov 29, 2018
- Intel Corporation
- HAN WUI THEN
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MULTIPLE STACKED FIELD-PLATED GAN TRANSISTOR AND INTERLAYER DIELECT...
- Publication number 20180331191
- Publication date Nov 15, 2018
- Intel Corporation
- HAN WUI THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BAND GAP TRANSISTORS ON NON-NATIVE SEMICONDUCTOR SUBSTRATES AN...
- Publication number 20180331224
- Publication date Nov 15, 2018
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED TRANSISTOR STRUCTURES ENABLING ULTRA-SHORT CHANNEL LEN...
- Publication number 20180331182
- Publication date Nov 15, 2018
- Intel Corporation
- HAN WUI THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATED III-N VOLTAGE REGULATOR AND RF POWER AMPLIFIER FOR EN...
- Publication number 20180331082
- Publication date Nov 15, 2018
- Intel Corporation
- HAN WUI THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-PLANAR P-CHANNEL AND N-CHANNEL GALLIUM NITRIDE-BASED TRANSISTORS...
- Publication number 20180323106
- Publication date Nov 8, 2018
- Intel Corporation
- SANSAPTAK DASGUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DIE HAVING REDUCED DEFECT GROUP III-NITRIDE STRU...
- Publication number 20180315659
- Publication date Nov 1, 2018
- Intel Corporation
- Sansaptak DASGUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD TO ACHIEVE A UNIFORM GROUP IV MATERIAL LAYER IN AN ASPECT...
- Publication number 20180261498
- Publication date Sep 13, 2018
- Intel Corporation
- Sanaz K. GARDNER
- H01 - BASIC ELECTRIC ELEMENTS

Sanaz K. Gardner

Person

Patents Grantslast 30 patents

Microelectronic devices having air gap structures integrated with i...

Multi-layer crystalline back gated thin film transistor

Multi-layer crystalline back gated thin film transistor

Ingaas epi structure and wet etch process for enabling III-v GAA in...

Microelectronic devices having air gap structures integrated with i...

Gallium nitride (GaN) transistor structures on a substrate

III-N epitaxial device structures on free standing silicon mesas

Multi-layer crystalline back gated thin film transistor

Gate stack design for GaN e-mode transistor performance

Techniques for monolithic co-integration of polycrystalline thin-fi...

Laterally adjacent and diverse group III-N transistors

Gate for a transistor

Microelectronic devices having air gap structures integrated with i...

Wurtzite heteroepitaxial structures with inclined sidewall facets f...

Ge NANO wire transistor with GAAS as the sacrificial layer

Semiconductor device with released source and drain

Group III-N MEMS structures on a group IV substrate

Semiconductor device having metallic source and drain regions

Nanowire transistors with embedded dielectric spacers

Geometric manipulation of 2DEG region in source/drain extension of...

Gate stack design for GaN e-mode transistor performance

Method to achieve a uniform Group IV material layer in an aspect ra...

N-channel gallium nitride transistors

Semiconductor devices with raised doped crystalline structures

Co-integrated III-N voltage regulator and RF power amplifier for en...

III-V finfet transistor with V-groove S/D profile for improved acce...

Transistors including retracted raised source/drain to reduce paras...

Transistors having ultra thin fin profiles and their methods of fab...

Wide band gap transistors on non-native semiconductor substrates

Envelope-tracking control techniques for highly-efficient RF power...

Patents Applicationslast 30 patents

MULTI-LAYER CRYSTALLINE BACK GATED THIN FILM TRANSISTOR

MICROELECTRONIC DEVICES HAVING AIR GAP STRUCTURES INTEGRATED WITH I...

MULTI-LAYER CRYSTALLINE BACK GATED THIN FILM TRANSISTOR

MICROELECTRONIC DEVICES HAVING AIR GAP STRUCTURES INTEGRATED WITH I...

GATE STACK DESIGN FOR GAN E-MODE TRANSISTOR PERFORMANCE

MULTI-LAYER CRYSTALLINE BACK GATED THIN FILM TRANSISTOR

NANOWIRE TRANSISTORS WITH EMBEDDED DIELECTRIC SPACERS

TECHNIQUES FOR MONOLITHIC CO-INTEGRATION OF POLYCRYSTALLINE THIN-FI...

GATE FOR A TRANSISTOR

MICROELECTRONIC DEVICES HAVING AIR GAP STRUCTURES INTEGRATED WITH I...

WURTZITE HETEROEPITAXIAL STRUCTURES WITH INCLINED SIDEWALL FACETS F...

LATERALLY ADJACENT AND DIVERSE GROUP III-N TRANSISTORS

GATE STACK DESIGN FOR GAN E-MODE TRANSISTOR PERFORMANCE

GEOMETRIC MANIPULATION OF 2DEG REGION IN SOURCE/DRAIN EXTENSION OF...

GE NANO WIRE TRANSISTOR WITH GAAS AS THE SACRIFICIAL LAYER

III-N EPITAXIAL DEVICE STRUCTURES ON FREE STANDING SILICON MESAS

SEMICONDUCTOR DEVICE WITH RELEASED SOURCE AND DRAIN

III-V FINFET TRANSISTOR WITH V-GROOVE S/D PROFILE FOR IMPROVED ACCE...

SEMICONDUCTOR DEVICES WITH RAISED DOPED CRYSTALLINE STRUCTURES

WAFER EDGE PROTECTION FOR CRACK-FREE MATERIAL GROWTH

TRANSISTORS INCLUDING RETRACTED RAISED SOURCE/DRAIN TO REDUCE PARAS...

N-CHANNEL GALLIUM NITRIDE TRANSISTORS

ENVELOPE-TRACKING CONTROL TECHNIQUES FOR HIGHLY-EFFICIENT RF POWER...

MULTIPLE STACKED FIELD-PLATED GAN TRANSISTOR AND INTERLAYER DIELECT...

WIDE BAND GAP TRANSISTORS ON NON-NATIVE SEMICONDUCTOR SUBSTRATES AN...

SELF-ALIGNED TRANSISTOR STRUCTURES ENABLING ULTRA-SHORT CHANNEL LEN...

CO-INTEGRATED III-N VOLTAGE REGULATOR AND RF POWER AMPLIFIER FOR EN...

CO-PLANAR P-CHANNEL AND N-CHANNEL GALLIUM NITRIDE-BASED TRANSISTORS...

INTEGRATED CIRCUIT DIE HAVING REDUCED DEFECT GROUP III-NITRIDE STRU...

A METHOD TO ACHIEVE A UNIFORM GROUP IV MATERIAL LAYER IN AN ASPECT...