Sanaz Kabehie

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Portland, OR, US

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Patents Grantslast 30 patents

Information Patent Grant
Methods to enhance doping concentration in near-surface layers of s...
- Patent number 9,653,559
- Issue date May 16, 2017
- Intel Corporation
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metallic source and drain regions
- Patent number 9,583,487
- Issue date Feb 28, 2017
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned structures and methods for asymmetric GaN transistors...
- Patent number 9,099,490
- Issue date Aug 4, 2015
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING METALLIC SOURCE AND DRAIN REGIONS
- Publication number 20170125591
- Publication date May 4, 2017
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED STRUCTURES AND METHODS FOR ASYMMETRIC GAN TRANSISTORS...
- Publication number 20140091308
- Publication date Apr 3, 2014
- Sansaptak DASGUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING METALLIC SOURCE AND DRAIN REGIONS
- Publication number 20140035059
- Publication date Feb 6, 2014
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS TO ENHANCE DOPING CONCENTRATION IN NEAR-SURFACE LAYERS OF S...
- Publication number 20130320417
- Publication date Dec 5, 2013
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS