Sandeep R. Bahl

Person

Loveland, CO, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method and circuitry for controlling a depletion-mode transistor
- Patent number 11,356,087
- Issue date Jun 7, 2022
- Texas Instruments Incorporated
- Michael Douglas Seeman
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
System and method for surge-testing a gallium nitride transistor de...
- Patent number 11,227,805
- Issue date Jan 18, 2022
- Texas Instruments Incorporated
- Sandeep Raj Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Overvoltage protection and short-circuit withstanding for gallium n...
- Patent number 11,088,534
- Issue date Aug 10, 2021
- Texas Instruments Incorporated
- Sandeep R. Bahl
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
High voltage device with multi-electrode control
- Patent number 10,340,252
- Issue date Jul 2, 2019
- Texas Instruments Incorporated
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Overvoltage protection and short-circuit withstanding for gallium n...
- Patent number 10,270,239
- Issue date Apr 23, 2019
- Texas Instruments Incorporated
- Sandeep R. Bahl
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
High-resolution power electronics measurements
- Patent number 10,094,863
- Issue date Oct 9, 2018
- Texas Instruments Incorporated
- Sandeep R. Bahl
- G01 - MEASURING TESTING
Information Patent Grant
High voltage device with multi-electrode control
- Patent number 9,991,225
- Issue date Jun 5, 2018
- Texas Instruments Incorporated
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and circuitry for controlling a depletion-mode transistor
- Patent number 9,762,230
- Issue date Sep 12, 2017
- Texas Instruments Incorporated
- Michael Douglas Seeman
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Growth of multi-layer group III-nitride buffers on large-area silic...
- Patent number 9,082,817
- Issue date Jul 14, 2015
- National Semiconductor Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of multi-layer group III-nitride buffers on large-area silic...
- Patent number 9,064,928
- Issue date Jun 23, 2015
- National Semiconductor Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic contact schemes for group III-V devices having a two-dimensio...
- Patent number 8,946,780
- Issue date Feb 3, 2015
- National Semiconductor Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Configuration and fabrication of semiconductor structure using empt...
- Patent number 8,735,980
- Issue date May 27, 2014
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable enhancement-mode group III-N HEMT with a reverse pol...
- Patent number 8,723,226
- Issue date May 13, 2014
- Texas Instruments Incorporated
- Sandeep Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and fabrication of asymmetric field-effect transistor hav...
- Patent number 8,629,027
- Issue date Jan 14, 2014
- Texas Instruments Incorporated
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of multi-layer group III-nitride buffers on large-area silic...
- Patent number 8,592,292
- Issue date Nov 26, 2013
- National Semiconductor Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride HEMT with multi-layered substrate having a second...
- Patent number 8,513,703
- Issue date Aug 20, 2013
- National Semiconductor Corporation
- Sandeep Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride HEMT having a well region formed on the surface o...
- Patent number 8,502,273
- Issue date Aug 6, 2013
- National Semiconductor Corporation
- Sandeep Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Configuration and fabrication of semiconductor structure having asy...
- Patent number 8,415,752
- Issue date Apr 9, 2013
- National Semiconductor Corporation
- Jeng-Jiun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and fabrication of field-effect transistor using empty we...
- Patent number 8,410,549
- Issue date Apr 2, 2013
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and fabrication of like-polarity field-effect transistors...
- Patent number 8,377,768
- Issue date Feb 19, 2013
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of group III nitride-based structures and integration with c...
- Patent number 8,318,563
- Issue date Nov 27, 2012
- National Semiconductor Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Configuration and fabrication of semiconductor structure in which s...
- Patent number 8,304,320
- Issue date Nov 6, 2012
- National Semiconductor Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Configuration and fabrication of semiconductor structure using empt...
- Patent number 8,304,835
- Issue date Nov 6, 2012
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of semiconductor structure having asymmetric field-effe...
- Patent number 8,163,619
- Issue date Apr 24, 2012
- National Semiconductor Corporation
- Jeng-Jiun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of asymmetric field-effect transistors using L-shaped s...
- Patent number 8,101,479
- Issue date Jan 24, 2012
- National Semiconductor Corporation
- D. Courtney Parker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and fabrication of like-polarity field-effect transistors...
- Patent number 8,084,827
- Issue date Dec 27, 2011
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure in which source and drain extensions of fie...
- Patent number 7,973,372
- Issue date Jul 5, 2011
- National Semiconductor Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric field-effect transistor having asymmetric channel zone a...
- Patent number 7,968,921
- Issue date Jun 28, 2011
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for integrating III-V semiconductor devices in...
- Patent number 7,608,471
- Issue date Oct 27, 2009
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced crosstalk CMOS image sensors
- Patent number 7,592,654
- Issue date Sep 22, 2009
- Aptina Imaging Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GAN DEVICES WITH MODIFIED HETEROJUNCTION STRUCTURE AND METHODS OF M...
- Publication number 20240047529
- Publication date Feb 8, 2024
- TEXAS INSTRUMENTS INCORPORATED
- DONG SEUP LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND CIRCUITRY FOR CONTROLLING A DEPLETION-MODE TRANSISTOR
- Publication number 20210167767
- Publication date Jun 3, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Michael Douglas Seeman
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SYSTEM AND METHOD FOR SURGE-TESTING A GALLIUM NITRIDE TRANSISTOR DE...
- Publication number 20200126874
- Publication date Apr 23, 2020
- TEXAS INSTRUMENTS INCORPORATED
- SANDEEP RAJ BAHL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OVERVOLTAGE PROTECTION AND SHORT-CIRCUIT WITHSTANDING FOR GALLIUM N...
- Publication number 20190199084
- Publication date Jun 27, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Sandeep R. Bahl
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
HIGH-RESOLUTION POWER ELECTRONICS MEASUREMENTS
- Publication number 20190094276
- Publication date Mar 28, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Sandeep R. Bahl
- G01 - MEASURING TESTING
Information Patent Application
HIGH VOLTAGE DEVICE WITH MULTI-ELECTRODE CONTROL
- Publication number 20180233481
- Publication date Aug 16, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND CIRCUITRY FOR CONTROLLING A DEPLETION-MODE TRANSISTOR
- Publication number 20180006640
- Publication date Jan 4, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Michael Douglas Seeman
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
OVERVOLTAGE PROTECTION AND SHORT-CIRCUIT WITHSTANDING FOR GALLIUM N...
- Publication number 20170365995
- Publication date Dec 21, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Sandeep R. Bahl
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
HIGH-RESOLUTION POWER ELECTRONICS MEASUREMENTS
- Publication number 20170254842
- Publication date Sep 7, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Sandeep R. Bahl
- G01 - MEASURING TESTING
Information Patent Application
HIGH VOLTAGE DEVICE WITH MULTI-ELECTRODE CONTROL
- Publication number 20160380089
- Publication date Dec 29, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND CIRCUITRY FOR CONTROLLING A DEPLETION-MODE TRANSISTOR
- Publication number 20150137619
- Publication date May 21, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Michael Douglas Seeman
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
BI-DIRECTIONAL GALLIUM NITRIDE SWITCH WITH SELF-MANAGED SUBSTRATE BIAS
- Publication number 20140374766
- Publication date Dec 25, 2014
- Sandeep R. BAHL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH OF MULTI-LAYER GROUP III-NITRIDE BUFFERS ON LARGE-AREA SILIC...
- Publication number 20140051226
- Publication date Feb 20, 2014
- National Semiconductor Corporation
- Sandeep R. BAHL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH OF MULTI-LAYER GROUP III-NITRIDE BUFFERS ON LARGE-AREA SILIC...
- Publication number 20140042458
- Publication date Feb 13, 2014
- National Semiconductor Corporation
- Sandeep R. BAHL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFIGURATION AND FABRICATION OF SEMICONDUCTOR STRUCTURE USING EMPT...
- Publication number 20130126970
- Publication date May 23, 2013
- NATIONAL SEMICONDUCTOR CORPORATION
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturable Enhancement-Mode Group III-N HEMT with a Reverse Pol...
- Publication number 20130126889
- Publication date May 23, 2013
- Sandeep Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Configuration and Fabrication of Semiconductor Structure Having Asy...
- Publication number 20130015535
- Publication date Jan 17, 2013
- Jeng-Jiun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE OR OTHER GROUP III/V-BASED SCHOTTKY DIODES WITH IMP...
- Publication number 20120280281
- Publication date Nov 8, 2012
- National Semiconductor Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Fabrication of Like-polarity Field-effect Transistors...
- Publication number 20120264263
- Publication date Oct 18, 2012
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OHMIC CONTACT SCHEMES FOR GROUP III-V DEVICES HAVING A TWO-DIMENSIO...
- Publication number 20120223317
- Publication date Sep 6, 2012
- National Semiconductor Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Configuration and Fabrication of Semiconductor Structure in Which S...
- Publication number 20120184077
- Publication date Jul 19, 2012
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STATIC INDUCTION TRANSISTOR WITH DIELECTRIC CARRIER SEPARATION LAYER
- Publication number 20120139013
- Publication date Jun 7, 2012
- Sandeep Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-N HEMT with an Increased Buffer Breakdown Voltage
- Publication number 20120098035
- Publication date Apr 26, 2012
- Sandeep Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-N HEMT with a Floating Substrate Region and a Grounded Su...
- Publication number 20120098036
- Publication date Apr 26, 2012
- Sandeep Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Growth of multi-layer group III-nitride buffers on large-area silic...
- Publication number 20120056244
- Publication date Mar 8, 2012
- National Semiconductor Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Growth of group III nitride- based structures and integration with...
- Publication number 20110284859
- Publication date Nov 24, 2011
- National Semiconductor Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gated anti-fuse in CMOS process
- Publication number 20110108926
- Publication date May 12, 2011
- National Semiconductor Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Configuration and fabrication of semiconductor structure using empt...
- Publication number 20100244128
- Publication date Sep 30, 2010
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and fabrication of field-effect transistor using empty we...
- Publication number 20100244130
- Publication date Sep 30, 2010
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and fabrication of asymmetric field-effect transistor hav...
- Publication number 20100244131
- Publication date Sep 30, 2010
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS

Sandeep R. Bahl

Person

Patents Grantslast 30 patents

Method and circuitry for controlling a depletion-mode transistor

System and method for surge-testing a gallium nitride transistor de...

Overvoltage protection and short-circuit withstanding for gallium n...

High voltage device with multi-electrode control

Overvoltage protection and short-circuit withstanding for gallium n...

High-resolution power electronics measurements

High voltage device with multi-electrode control

Method and circuitry for controlling a depletion-mode transistor

Growth of multi-layer group III-nitride buffers on large-area silic...

Growth of multi-layer group III-nitride buffers on large-area silic...

Ohmic contact schemes for group III-V devices having a two-dimensio...

Configuration and fabrication of semiconductor structure using empt...

Manufacturable enhancement-mode group III-N HEMT with a reverse pol...

Structure and fabrication of asymmetric field-effect transistor hav...

Growth of multi-layer group III-nitride buffers on large-area silic...

Group III-nitride HEMT with multi-layered substrate having a second...

Group III-nitride HEMT having a well region formed on the surface o...

Configuration and fabrication of semiconductor structure having asy...

Structure and fabrication of field-effect transistor using empty we...

Structure and fabrication of like-polarity field-effect transistors...

Growth of group III nitride-based structures and integration with c...

Configuration and fabrication of semiconductor structure in which s...

Configuration and fabrication of semiconductor structure using empt...

Fabrication of semiconductor structure having asymmetric field-effe...

Fabrication of asymmetric field-effect transistors using L-shaped s...

Structure and fabrication of like-polarity field-effect transistors...

Semiconductor structure in which source and drain extensions of fie...

Asymmetric field-effect transistor having asymmetric channel zone a...

Method and apparatus for integrating III-V semiconductor devices in...

Reduced crosstalk CMOS image sensors

Patents Applicationslast 30 patents

GAN DEVICES WITH MODIFIED HETEROJUNCTION STRUCTURE AND METHODS OF M...

METHOD AND CIRCUITRY FOR CONTROLLING A DEPLETION-MODE TRANSISTOR

SYSTEM AND METHOD FOR SURGE-TESTING A GALLIUM NITRIDE TRANSISTOR DE...

OVERVOLTAGE PROTECTION AND SHORT-CIRCUIT WITHSTANDING FOR GALLIUM N...

HIGH-RESOLUTION POWER ELECTRONICS MEASUREMENTS

HIGH VOLTAGE DEVICE WITH MULTI-ELECTRODE CONTROL

METHOD AND CIRCUITRY FOR CONTROLLING A DEPLETION-MODE TRANSISTOR

OVERVOLTAGE PROTECTION AND SHORT-CIRCUIT WITHSTANDING FOR GALLIUM N...

HIGH-RESOLUTION POWER ELECTRONICS MEASUREMENTS

HIGH VOLTAGE DEVICE WITH MULTI-ELECTRODE CONTROL

METHOD AND CIRCUITRY FOR CONTROLLING A DEPLETION-MODE TRANSISTOR

BI-DIRECTIONAL GALLIUM NITRIDE SWITCH WITH SELF-MANAGED SUBSTRATE BIAS

GROWTH OF MULTI-LAYER GROUP III-NITRIDE BUFFERS ON LARGE-AREA SILIC...

GROWTH OF MULTI-LAYER GROUP III-NITRIDE BUFFERS ON LARGE-AREA SILIC...

CONFIGURATION AND FABRICATION OF SEMICONDUCTOR STRUCTURE USING EMPT...

Manufacturable Enhancement-Mode Group III-N HEMT with a Reverse Pol...

Configuration and Fabrication of Semiconductor Structure Having Asy...

GALLIUM NITRIDE OR OTHER GROUP III/V-BASED SCHOTTKY DIODES WITH IMP...

Structure and Fabrication of Like-polarity Field-effect Transistors...

OHMIC CONTACT SCHEMES FOR GROUP III-V DEVICES HAVING A TWO-DIMENSIO...

Configuration and Fabrication of Semiconductor Structure in Which S...

STATIC INDUCTION TRANSISTOR WITH DIELECTRIC CARRIER SEPARATION LAYER

Group III-N HEMT with an Increased Buffer Breakdown Voltage

Group III-N HEMT with a Floating Substrate Region and a Grounded Su...

Growth of multi-layer group III-nitride buffers on large-area silic...

Growth of group III nitride- based structures and integration with...

Gated anti-fuse in CMOS process

Configuration and fabrication of semiconductor structure using empt...

Structure and fabrication of field-effect transistor using empty we...

Structure and fabrication of asymmetric field-effect transistor hav...