Sandra C. Hangarter

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Gaithersburg, MD, US

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Patents Grantslast 30 patents

Information Patent Grant
Plasma modified epitaxial fabricated graphene on SiC for electroche...
- Patent number 10,928,351
- Issue date Feb 23, 2021
- The Government of the United States of America, as represented by the Secreta...
- Scott A. Trammell
- G01 - MEASURING TESTING
Information Patent Grant
Growth of crystalline materials on two-dimensional inert materials
- Patent number 10,266,963
- Issue date Apr 23, 2019
- The United States of America, as represented by the Secretary of the Navy
- Neeraj Nepal
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Plasma Modified Epitaxial Fabricated Graphene on SiC for Electroche...
- Publication number 20190033247
- Publication date Jan 31, 2019
- The Government of the United States of America, as represented by the Secreta...
- Scott A. Trammell
- C30 - CRYSTAL GROWTH
Information Patent Application
Growth of Crystalline Materials on Two-Dimensional Inert Materials
- Publication number 20140255705
- Publication date Sep 11, 2014
- The Government of the United States of America, as represented by the Secreta...
- Neeraj Nepal
- C30 - CRYSTAL GROWTH