Sandrine CHARUE-BAKKER

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Portland, OR, US

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Patents Grantslast 30 patents

Information Patent Grant
Source or drain structures with high phosphorous dopant concentration
- Patent number 11,955,482
- Issue date Apr 9, 2024
- Intel Corporation
- Robert Ehlert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of III-N transistors and non-III-N transistors by semic...
- Patent number 11,581,313
- Issue date Feb 14, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH VARIED EPITAXIAL SOURCE OR DRAIN...
- Publication number 20250220870
- Publication date Jul 3, 2025
- Intel Corporation
- Chang Wan HAN
Information Patent Application
CO-INTEGRATED GALLIUM NITRIDE (GAN) AND COMPLEMENTARY METAL OXIDE S...
- Publication number 20220093790
- Publication date Mar 24, 2022
- Intel Corporation
- Glenn A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSITION METAL-III-NITRIDE ALLOYS FOR ROBUST HIGH PERFORMANCE HEMTS
- Publication number 20210399119
- Publication date Dec 23, 2021
- Intel Corporation
- Suresh VISHWANATH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES WITH HIGH PHOSPHOROUS DOPANT CONCENTRATION
- Publication number 20210358908
- Publication date Nov 18, 2021
- Intel Corporation
- Robert EHLERT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF III-N TRANSISTORS AND NON-III-N TRANSISTORS BY SEMIC...
- Publication number 20200273860
- Publication date Aug 27, 2020
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN BASED HEMT DEVICE RELAXED BUFFER STRUCTURE ON SILICON
- Publication number 20200194577
- Publication date Jun 18, 2020
- Intel Corporation
- Glenn GLASS
- H01 - BASIC ELECTRIC ELEMENTS