Sang Woo Lim

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Ballston Spa, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Device with large EPI in FinFETs and method of manufacturing
- Patent number 10,910,471
- Issue date Feb 2, 2021
- GLOBALFOUNDRIES Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-curvature cavity for semiconductor epitaxy
- Patent number 10,355,104
- Issue date Jul 16, 2019
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEVICE WITH LARGE EPI IN FINFETS AND METHOD OF MANUFACTURING
- Publication number 20200020769
- Publication date Jan 16, 2020
- GLOBALFOUNDRIES INC.
- Jianwei PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE-CURVATURE CAVITY FOR SEMICONDUCTOR EPITAXY
- Publication number 20190131432
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS