SangBum Kim

Person

Stamford, CT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Pulsing synaptic devices based on phase-change memory to increase t...
- Patent number 11,557,343
- Issue date Jan 17, 2023
- International Business Machines Corporation
- Fabio Carta
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Single-sided liner PCM cell for 3D crossbar PCM memory
- Patent number 11,355,706
- Issue date Jun 7, 2022
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neuron peripheral circuits for neuromorphic synaptic memory array b...
- Patent number 10,810,489
- Issue date Oct 20, 2020
- Samsung Electronics Co., Ltd.
- Kohji Hosokawa
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Neuromorphic memory circuit
- Patent number 10,713,562
- Issue date Jul 14, 2020
- International Business Machines Corporation
- SangBum Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Single-sided liner PCM cell for 3D crossbar PCM memory
- Patent number 10,707,417
- Issue date Jul 7, 2020
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neuron peripheral circuits for neuromorphic synaptic memory array b...
- Patent number 10,572,799
- Issue date Feb 25, 2020
- International Business Machines Corporation
- Kohji Hosokawa
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
System to duplicate neuromorphic core functionality
- Patent number 10,528,865
- Issue date Jan 7, 2020
- International Business Machines Corporation
- SangBum Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Communicating postsynaptic neuron fires to neuromorphic cores
- Patent number 10,417,559
- Issue date Sep 17, 2019
- International Business Machines Corporation
- Kohji Hosokawa
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Neuron peripheral circuits for neuromorphic synaptic memory array b...
- Patent number 10,169,701
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Kohji Hosokawa
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Metal nitride keyhole or spacer phase change memory cell structures
- Patent number 10,056,546
- Issue date Aug 21, 2018
- International Business Machines Corporation
- Matthew Joseph BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change storage device with multiple serially connected storag...
- Patent number 9,882,126
- Issue date Jan 30, 2018
- International Business Machines Corporation
- Matthew J. BrightSky
- G11 - INFORMATION STORAGE
Information Patent Grant
Neuromorphic memory circuit using a leaky integrate and fire (LIF)...
- Patent number 9,830,981
- Issue date Nov 28, 2017
- International Business Machines Corporation
- SangBum Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Neuromorphic memory circuit using a dendrite leaky integrate and fi...
- Patent number 9,830,982
- Issue date Nov 28, 2017
- International Business Machines Corporation
- SangBum Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Metal nitride keyhole or spacer phase change memory cell structures
- Patent number 9,627,612
- Issue date Apr 18, 2017
- International Business Machines Corporation
- Matthew Joseph BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetrical bipolar junction transistor array
- Patent number 9,263,336
- Issue date Feb 16, 2016
- International Business Machines Corporation
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase-change memory cells
- Patent number 9,257,639
- Issue date Feb 9, 2016
- GLOBALFOUNDRIES Inc.
- SangBum Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with memory buffer for premature read protection
- Patent number 9,245,619
- Issue date Jan 26, 2016
- International Business Machines Corporation
- Kyu-hyoun Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory with a stabilizer
- Patent number 9,059,404
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory state sensing based on cell capacitance
- Patent number 9,058,852
- Issue date Jun 16, 2015
- International Business Machines Corporation
- SangBum Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory with a stabilizer
- Patent number 9,006,700
- Issue date Apr 14, 2015
- International Business Machines Corporation
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory array and operation scheme
- Patent number 9,007,800
- Issue date Apr 14, 2015
- International Business Machines Corporation
- SangBum Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory array and operation scheme
- Patent number 8,953,367
- Issue date Feb 10, 2015
- International Business Machines Corporation
- SangBum Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
High-endurance phase change memory devices and methods for operatin...
- Patent number 8,891,293
- Issue date Nov 18, 2014
- Macronix International Co., Ltd.
- Pei-Ying Du
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory state sensing based on cell capacitance
- Patent number 8,824,190
- Issue date Sep 2, 2014
- International Business Machines Corporation
- SangBum Kim
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
PULSING SYNAPTIC DEVICES BASED ON PHASE-CHANGE MEMORY TO INCREASE T...
- Publication number 20220406377
- Publication date Dec 22, 2022
- International Business Machines Corporation
- Fabio Carta
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SINGLE-SIDED LINER PCM CELL FOR 3D CROSSBAR PCM MEMORY
- Publication number 20200388760
- Publication date Dec 10, 2020
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR WIRELESS COMMUNICATION IN WIRELESS COMMUNI...
- Publication number 20200355834
- Publication date Nov 12, 2020
- SAMSUNG ELECTRONICS CO., LTD.
- Seungri Jin
- G01 - MEASURING TESTING
Information Patent Application
NEURON PERIPHERAL CIRCUITS FOR NEUROMORPHIC SYNAPTIC MEMORY ARRAY B...
- Publication number 20200082256
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Kohji Hosokawa
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SYSTEM TO DUPLICATE NEUROMORPHIC CORE FUNCTIONALITY
- Publication number 20170364793
- Publication date Dec 21, 2017
- International Business Machines Corporation
- SangBum Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NEUROMORPHIC MEMORY CIRCUIT
- Publication number 20170364801
- Publication date Dec 21, 2017
- International Business Machines Corporation
- SangBum Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PHASE CHANGE STORAGE DEVICE WITH MULTIPLE SERIALLY CONNECTED STORAG...
- Publication number 20170294578
- Publication date Oct 12, 2017
- International Business Machines Corporation
- Matthew J. BrightSky
- G11 - INFORMATION STORAGE
Information Patent Application
METAL NITRIDE KEYHOLE OR SPACER PHASE CHANGE MEMORY CELL STRUCTURES
- Publication number 20170222141
- Publication date Aug 3, 2017
- International Business Machines Corporation
- Matthew Joseph BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMMUNICATING POSTSYNAPTIC NEURON FIRES TO NEUROMORPHIC CORES
- Publication number 20160371583
- Publication date Dec 22, 2016
- International Business Machines Corporation
- Kohji Hosokawa
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NEURON PERIPHERAL CIRCUITS FOR NEUROMORPHIC SYNAPTIC MEMORY ARRAY B...
- Publication number 20160350643
- Publication date Dec 1, 2016
- International Business Machines Corporation
- Kohji Hosokawa
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NEURON PERIPHERAL CIRCUITS FOR NEUROMORPHIC SYNAPTIC MEMORY ARRAY B...
- Publication number 20160350647
- Publication date Dec 1, 2016
- International Business Machines Corporation
- Kohji Hosokawa
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NEUROMORPHIC MEMORY CIRCUIT
- Publication number 20160203400
- Publication date Jul 14, 2016
- International Business Machines Corporation
- SangBum Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NEUROMORPHIC MEMORY CIRCUIT
- Publication number 20160203858
- Publication date Jul 14, 2016
- International Business Machines Corporation
- SangBum Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PHASE CHANGE MEMORY WITH METASTABLE SET AND RESET STATES
- Publication number 20160125938
- Publication date May 5, 2016
- International Business Machines Corporation
- Matthew J. BrightSky
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY WITH METASTABLE SET AND RESET STATES
- Publication number 20160125936
- Publication date May 5, 2016
- International Business Machines Corporation
- Matthew J. BrightSky
- G11 - INFORMATION STORAGE
Information Patent Application
SYMMETRICAL BIPOLAR JUNCTION TRANSISTOR ARRAY
- Publication number 20150348844
- Publication date Dec 3, 2015
- International Business Machines Corporation
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH MEMORY BUFFER FOR PREMATURE READ PROTECTION
- Publication number 20150255150
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Kyu-hyoun Kim
- G11 - INFORMATION STORAGE
Information Patent Application
METAL NITRIDE KEYHOLE OR SPACER PHASE CHANGE MEMORY CELL STRUCTURES
- Publication number 20150243884
- Publication date Aug 27, 2015
- International Business Machines Corporation
- Matthew Joseph BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY WITH A STABILIZER
- Publication number 20140377929
- Publication date Dec 25, 2014
- International Business Machines Corporation
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY WITH A STABILIZER
- Publication number 20140374687
- Publication date Dec 25, 2014
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY CELLS
- Publication number 20140369114
- Publication date Dec 18, 2014
- SangBum Kim
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY STATE SENSING BASED ON CELL CAPACITANCE
- Publication number 20140254291
- Publication date Sep 11, 2014
- International Business Machines Corporation
- SangBum Kim
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY STATE SENSING BASED ON CELL CAPACITANCE
- Publication number 20140254236
- Publication date Sep 11, 2014
- International Business Machines Corporation
- SangBum Kim
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY ARRAY AND OPERATION SCHEME
- Publication number 20140160838
- Publication date Jun 12, 2014
- International Business Machines Corporation
- SangBum Kim
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY ARRAY AND OPERATION SCHEME
- Publication number 20140160836
- Publication date Jun 12, 2014
- International Business Machines Corporation
- SangBum Kim
- G11 - INFORMATION STORAGE
Information Patent Application
Multilayer-Stacked Phase Change Memory Cell
- Publication number 20130306929
- Publication date Nov 21, 2013
- Jaeho Lee
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH-ENDURANCE PHASE CHANGE MEMORY DEVICES AND METHODS FOR OPERATIN...
- Publication number 20120327708
- Publication date Dec 27, 2012
- International Business Machines Corporation
- Pei-Ying DU
- G11 - INFORMATION STORAGE

SangBum Kim

Person

Patents Grantslast 30 patents

Pulsing synaptic devices based on phase-change memory to increase t...

Single-sided liner PCM cell for 3D crossbar PCM memory

Neuron peripheral circuits for neuromorphic synaptic memory array b...

Neuromorphic memory circuit

Single-sided liner PCM cell for 3D crossbar PCM memory

Neuron peripheral circuits for neuromorphic synaptic memory array b...

System to duplicate neuromorphic core functionality

Communicating postsynaptic neuron fires to neuromorphic cores

Neuron peripheral circuits for neuromorphic synaptic memory array b...

Metal nitride keyhole or spacer phase change memory cell structures

Phase change storage device with multiple serially connected storag...

Neuromorphic memory circuit using a leaky integrate and fire (LIF)...

Neuromorphic memory circuit using a dendrite leaky integrate and fi...

Metal nitride keyhole or spacer phase change memory cell structures

Symmetrical bipolar junction transistor array

Phase-change memory cells

Memory device with memory buffer for premature read protection

Resistive memory with a stabilizer

Memory state sensing based on cell capacitance

Resistive memory with a stabilizer

Three-dimensional memory array and operation scheme

Three-dimensional memory array and operation scheme

High-endurance phase change memory devices and methods for operatin...

Memory state sensing based on cell capacitance

Patents Applicationslast 30 patents

PULSING SYNAPTIC DEVICES BASED ON PHASE-CHANGE MEMORY TO INCREASE T...

SINGLE-SIDED LINER PCM CELL FOR 3D CROSSBAR PCM MEMORY

METHOD AND APPARATUS FOR WIRELESS COMMUNICATION IN WIRELESS COMMUNI...

NEURON PERIPHERAL CIRCUITS FOR NEUROMORPHIC SYNAPTIC MEMORY ARRAY B...

SYSTEM TO DUPLICATE NEUROMORPHIC CORE FUNCTIONALITY

NEUROMORPHIC MEMORY CIRCUIT

PHASE CHANGE STORAGE DEVICE WITH MULTIPLE SERIALLY CONNECTED STORAG...

METAL NITRIDE KEYHOLE OR SPACER PHASE CHANGE MEMORY CELL STRUCTURES

COMMUNICATING POSTSYNAPTIC NEURON FIRES TO NEUROMORPHIC CORES

NEURON PERIPHERAL CIRCUITS FOR NEUROMORPHIC SYNAPTIC MEMORY ARRAY B...

NEURON PERIPHERAL CIRCUITS FOR NEUROMORPHIC SYNAPTIC MEMORY ARRAY B...

NEUROMORPHIC MEMORY CIRCUIT

NEUROMORPHIC MEMORY CIRCUIT

PHASE CHANGE MEMORY WITH METASTABLE SET AND RESET STATES

PHASE CHANGE MEMORY WITH METASTABLE SET AND RESET STATES

SYMMETRICAL BIPOLAR JUNCTION TRANSISTOR ARRAY

MEMORY DEVICE WITH MEMORY BUFFER FOR PREMATURE READ PROTECTION

METAL NITRIDE KEYHOLE OR SPACER PHASE CHANGE MEMORY CELL STRUCTURES

RESISTIVE MEMORY WITH A STABILIZER

RESISTIVE MEMORY WITH A STABILIZER

PHASE-CHANGE MEMORY CELLS

MEMORY STATE SENSING BASED ON CELL CAPACITANCE

MEMORY STATE SENSING BASED ON CELL CAPACITANCE

THREE-DIMENSIONAL MEMORY ARRAY AND OPERATION SCHEME

THREE-DIMENSIONAL MEMORY ARRAY AND OPERATION SCHEME

Multilayer-Stacked Phase Change Memory Cell

HIGH-ENDURANCE PHASE CHANGE MEMORY DEVICES AND METHODS FOR OPERATIN...