SangHwan PARK

Person

Hwaseong-si, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive random access memory device having a metal layer d...
- Patent number 12,190,928
- Issue date Jan 7, 2025
- Samsung Electronics Co., Ltd.
- Younghyun Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices having oxidation control layer
- Patent number 12,029,134
- Issue date Jul 2, 2024
- Samsung Electronics Co., Ltd.
- Sanghwan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory devices
- Patent number 11,944,014
- Issue date Mar 26, 2024
- Samsung Electronics Co., Ltd.
- Sanghwan Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device having perpendicular magnetic tunnel junctio...
- Patent number 9,362,486
- Issue date Jun 7, 2016
- Samsung Electronics Co., Ltd.
- KeeWon Kim
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ELECTRONIC DEVICE PROVIDING WALKIE-TALKIE SERVICE USING SHORT-RANGE...
- Publication number 20240292491
- Publication date Aug 29, 2024
- Samsung Electronics Co., Ltd.
- Hyoungmin Seo
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
MAGNETORESISTIVE MEMORY DEVICE AND SEMICONDUCTOR DEVICE INCLUDING T...
- Publication number 20230371392
- Publication date Nov 16, 2023
- Samsung Electronics Co., Ltd.
- Yoonyoung LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20230186963
- Publication date Jun 15, 2023
- Samsung Electronics Co., Ltd.
- Younghyun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC DEVICE
- Publication number 20230074141
- Publication date Mar 9, 2023
- Samsung Electronics Co., Ltd.
- Sanghwan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING OXIDATION CONTROL LAYER
- Publication number 20220238795
- Publication date Jul 28, 2022
- Samsung Electronics Co., Ltd.
- Sanghwan PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICES
- Publication number 20220158085
- Publication date May 19, 2022
- Samsung Electronics Co., Ltd.
- Sanghwan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE HAVING PERPENDICULAR MAGNETIC TUNNEL JUNCTIO...
- Publication number 20160093798
- Publication date Mar 31, 2016
- KeeWon KIM
- G11 - INFORMATION STORAGE

SangHwan PARK

Person

Patents Grantslast 30 patents

Magnetoresistive random access memory device having a metal layer d...

Semiconductor devices having oxidation control layer

Magnetic memory devices

Magnetic memory device having perpendicular magnetic tunnel junctio...

Patents Applicationslast 30 patents

ELECTRONIC DEVICE PROVIDING WALKIE-TALKIE SERVICE USING SHORT-RANGE...

MAGNETORESISTIVE MEMORY DEVICE AND SEMICONDUCTOR DEVICE INCLUDING T...

MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE

MAGNETIC DEVICE

SEMICONDUCTOR DEVICES HAVING OXIDATION CONTROL LAYER

MAGNETIC MEMORY DEVICES

MAGNETIC MEMORY DEVICE HAVING PERPENDICULAR MAGNETIC TUNNEL JUNCTIO...