Sanjay C. Mehta

Person

Niskayuna, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Air gap spacer formation for nano-scale semiconductor devices
- Patent number 11,658,062
- Issue date May 23, 2023
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory cell with a wrap around and ring type of electr...
- Patent number 11,456,415
- Issue date Sep 27, 2022
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Approach to bottom dielectric isolation for vertical transport fin...
- Patent number 11,302,797
- Issue date Apr 12, 2022
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device
- Patent number 11,264,569
- Issue date Mar 1, 2022
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High thermal budget compatible punch through stop integration using...
- Patent number 11,171,204
- Issue date Nov 9, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High thermal budget compatible punch through stop integration using...
- Patent number 11,152,460
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate first technique in vertical transport FET using doped silicon...
- Patent number 10,892,339
- Issue date Jan 12, 2021
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate tie-down enablement with inner spacer
- Patent number 10,879,375
- Issue date Dec 29, 2020
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Approach to bottom dielectric isolation for vertical transport fin...
- Patent number 10,840,354
- Issue date Nov 17, 2020
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned top extension formation for vertical transistors
- Patent number 10,784,371
- Issue date Sep 22, 2020
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective contact etch for unmerged epitaxial source/drain regions
- Patent number 10,784,258
- Issue date Sep 22, 2020
- International Business Machines Corporation
- Sanjay C. Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect-transistors having a silicon oxide layer with...
- Patent number 10,707,326
- Issue date Jul 7, 2020
- International Business Machines Corporation
- Chi-Chun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection of high-K dielectric during reliability anneal on nanosh...
- Patent number 10,692,985
- Issue date Jun 23, 2020
- International Business Machines Corporation
- Nicolas J. Loubet
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Self aligned top extension formation for vertical transistors
- Patent number 10,651,308
- Issue date May 12, 2020
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Approach to bottom dielectric isolation for vertical transport fin...
- Patent number 10,629,702
- Issue date Apr 21, 2020
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High thermal budget compatible punch through stop integration using...
- Patent number 10,580,854
- Issue date Mar 3, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High thermal budget compatible punch through stop integration using...
- Patent number 10,580,855
- Issue date Mar 3, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming vertical transistor having dual bottom spacers
- Patent number 10,529,828
- Issue date Jan 7, 2020
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate tie-down enablement with inner spacer
- Patent number 10,522,654
- Issue date Dec 31, 2019
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap spacer formation for nano-scale semiconductor devices
- Patent number 10,418,277
- Issue date Sep 17, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective contact etch for unmerged epitaxial source/drain regions
- Patent number 10,366,988
- Issue date Jul 30, 2019
- International Business Machines Corporation
- Sanjay C. Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer formation on semiconductor device
- Patent number 10,355,109
- Issue date Jul 16, 2019
- International Business Machines Corporation
- Thamarai Selvi Devarajan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate tie-down enablement with inner spacer
- Patent number 10,332,977
- Issue date Jun 25, 2019
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection of high-K dielectric during reliability anneal on nanosh...
- Patent number 10,304,936
- Issue date May 28, 2019
- International Business Machines Corporation
- Nicolas J. Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor top epitaxy source/drain and contact structure
- Patent number 10,269,652
- Issue date Apr 23, 2019
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor top epitaxy source/drain and contact structure
- Patent number 10,262,904
- Issue date Apr 16, 2019
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect-transistors having a silicon oxide layer with...
- Patent number 10,256,320
- Issue date Apr 9, 2019
- International Business Machines Corporation
- Chi-Chun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming vertical transistor having dual bottom spacers
- Patent number 10,236,360
- Issue date Mar 19, 2019
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pure boron for silicide contact
- Patent number 10,229,982
- Issue date Mar 12, 2019
- International Business Machines Corporation
- Chia-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of vertical doped fins for complementary metal oxide se...
- Patent number 10,170,479
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES
- Publication number 20240079266
- Publication date Mar 7, 2024
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTOM DIELECTRIC ISOLATION FOR VERTICALLY STACKED DEVICES
- Publication number 20230307495
- Publication date Sep 28, 2023
- International Business Machines Corporation
- Sanjay C. Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-POINT MAGNETORESISTIVE MEMORY ARRAY CONTAINING SELECTOR RAILS...
- Publication number 20230309319
- Publication date Sep 28, 2023
- SANDISK TECHNOLOGIES LLC
- Jordan KATINE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION BETWEEN VERTICALLY STACKED NANOSHEET DEVICES
- Publication number 20230290776
- Publication date Sep 14, 2023
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE ENCAPSULATION OF MEMRISTIVE ELEMENT
- Publication number 20230200265
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICALLY INSULATED PROJECTION LINER FOR AI DEVICE
- Publication number 20230085288
- Publication date Mar 16, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL WITH A WRAP AROUND AND RING TYPE OF ELECTR...
- Publication number 20220181546
- Publication date Jun 9, 2022
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE
- Publication number 20210135104
- Publication date May 6, 2021
- International Business Machines Corporation
- Injo Ok
- G11 - INFORMATION STORAGE
Information Patent Application
GATE FIRST TECHNIQUE IN VERTICAL TRANSPORT FET USING DOPED SILICON...
- Publication number 20200295147
- Publication date Sep 17, 2020
- International Business Machines Corporation
- RUQIANG BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPROACH TO BOTTOM DIELECTRIC ISOLATION FOR VERTICAL TRANSPORT FIN...
- Publication number 20200212202
- Publication date Jul 2, 2020
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE VARIATION CONTROL OF VERTICAL TRANSPORT FIN FIELD EFFECT TRA...
- Publication number 20200135873
- Publication date Apr 30, 2020
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH THERMAL BUDGET COMPATIBLE PUNCH THROUGH STOP INTEGRATION USING...
- Publication number 20200083322
- Publication date Mar 12, 2020
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH THERMAL BUDGET COMPATIBLE PUNCH THROUGH STOP INTEGRATION USING...
- Publication number 20200083323
- Publication date Mar 12, 2020
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF ALIGNED TOP EXTENSION FORMATION FOR VERTICAL TRANSISTORS
- Publication number 20190386137
- Publication date Dec 19, 2019
- International Business Machines Corporation
- OLEG GLUSCHENKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE TIE-DOWN ENABLEMENT WITH INNER SPACER
- Publication number 20190363178
- Publication date Nov 28, 2019
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE CONTACT ETCH FOR UNMERGED EPITAXIAL SOURCE/DRAIN REGIONS
- Publication number 20190333916
- Publication date Oct 31, 2019
- International Business Machines Corporation
- Sanjay C. Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES
- Publication number 20190267279
- Publication date Aug 29, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTION OF HIGH-K DIELECTRIC DURING RELIABILITY ANNEAL ON NANOSH...
- Publication number 20190189766
- Publication date Jun 20, 2019
- International Business Machines Corporation
- Nicolas J. Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD-EFFECT-TRANSISTORS HAVING A SILICON OXIDE LAYER WITH...
- Publication number 20190189775
- Publication date Jun 20, 2019
- International Business Machines Corporation
- Chi-Chun LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING VERTICAL TRANSISTOR HAVING DUAL BOTTOM SPACERS
- Publication number 20190172928
- Publication date Jun 6, 2019
- International Business Machines Corporation
- OLEG GLUSCHENKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD-EFFECT-TRANSISTORS HAVING A SILICON OXIDE LAYER WITH...
- Publication number 20190109212
- Publication date Apr 11, 2019
- International Business Machines Corporation
- Chi-Chun LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE TIE-DOWN ENABLEMENT WITH INNER SPACER
- Publication number 20180374932
- Publication date Dec 27, 2018
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF ALIGNED TOP EXTENSION FORMATION FOR VERTICAL TRANSISTORS
- Publication number 20180331216
- Publication date Nov 15, 2018
- International Business Machines Corporation
- OLEG GLUSCHENKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR TOP EPITAXY SOURCE/DRAIN AND CONTACT STRUCTURE
- Publication number 20180277446
- Publication date Sep 27, 2018
- International Business Machines Corporation
- OLEG GLUSCHENKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR TOP EPITAXY SOURCE/DRAIN AND CONTACT STRUCTURE
- Publication number 20180277445
- Publication date Sep 27, 2018
- International Business Machines Corporation
- OLEG GLUSCHENKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES
- Publication number 20180261494
- Publication date Sep 13, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPROACH TO BOTTOM DIELECTRIC ISOLATION FOR VERTICAL TRANSPORT FIN...
- Publication number 20180226491
- Publication date Aug 9, 2018
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPROACH TO BOTTOM DIELECTRIC ISOLATION FOR VERTICAL TRANSPORT FIN...
- Publication number 20180226489
- Publication date Aug 9, 2018
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING VERTICAL TRANSISTOR HAVING DUAL BOTTOM SPACERS
- Publication number 20180190794
- Publication date Jul 5, 2018
- International Business Machines Corporation
- OLEG GLUSCHENKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE TIE-DOWN ENABLEMENT WITH INNER SPACER
- Publication number 20180151433
- Publication date May 31, 2018
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS

Sanjay C. Mehta

Person

Patents Grantslast 30 patents

Air gap spacer formation for nano-scale semiconductor devices

Phase change memory cell with a wrap around and ring type of electr...

Approach to bottom dielectric isolation for vertical transport fin...

Phase change memory device

High thermal budget compatible punch through stop integration using...

High thermal budget compatible punch through stop integration using...

Gate first technique in vertical transport FET using doped silicon...

Gate tie-down enablement with inner spacer

Approach to bottom dielectric isolation for vertical transport fin...

Self aligned top extension formation for vertical transistors

Selective contact etch for unmerged epitaxial source/drain regions

Vertical field-effect-transistors having a silicon oxide layer with...

Protection of high-K dielectric during reliability anneal on nanosh...

Self aligned top extension formation for vertical transistors

Approach to bottom dielectric isolation for vertical transport fin...

High thermal budget compatible punch through stop integration using...

High thermal budget compatible punch through stop integration using...

Method of forming vertical transistor having dual bottom spacers

Gate tie-down enablement with inner spacer

Air gap spacer formation for nano-scale semiconductor devices

Selective contact etch for unmerged epitaxial source/drain regions

Spacer formation on semiconductor device

Gate tie-down enablement with inner spacer

Protection of high-K dielectric during reliability anneal on nanosh...

Vertical transistor top epitaxy source/drain and contact structure

Vertical transistor top epitaxy source/drain and contact structure

Vertical field-effect-transistors having a silicon oxide layer with...

Method of forming vertical transistor having dual bottom spacers

Pure boron for silicide contact

Fabrication of vertical doped fins for complementary metal oxide se...

Patents Applicationslast 30 patents

AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES

BOTTOM DIELECTRIC ISOLATION FOR VERTICALLY STACKED DEVICES

CROSS-POINT MAGNETORESISTIVE MEMORY ARRAY CONTAINING SELECTOR RAILS...

ISOLATION BETWEEN VERTICALLY STACKED NANOSHEET DEVICES

SELECTIVE ENCAPSULATION OF MEMRISTIVE ELEMENT

ELECTRICALLY INSULATED PROJECTION LINER FOR AI DEVICE

PHASE CHANGE MEMORY CELL WITH A WRAP AROUND AND RING TYPE OF ELECTR...

PHASE CHANGE MEMORY DEVICE

GATE FIRST TECHNIQUE IN VERTICAL TRANSPORT FET USING DOPED SILICON...

APPROACH TO BOTTOM DIELECTRIC ISOLATION FOR VERTICAL TRANSPORT FIN...

DEVICE VARIATION CONTROL OF VERTICAL TRANSPORT FIN FIELD EFFECT TRA...

HIGH THERMAL BUDGET COMPATIBLE PUNCH THROUGH STOP INTEGRATION USING...

HIGH THERMAL BUDGET COMPATIBLE PUNCH THROUGH STOP INTEGRATION USING...

SELF ALIGNED TOP EXTENSION FORMATION FOR VERTICAL TRANSISTORS

GATE TIE-DOWN ENABLEMENT WITH INNER SPACER

SELECTIVE CONTACT ETCH FOR UNMERGED EPITAXIAL SOURCE/DRAIN REGIONS

AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES

PROTECTION OF HIGH-K DIELECTRIC DURING RELIABILITY ANNEAL ON NANOSH...

VERTICAL FIELD-EFFECT-TRANSISTORS HAVING A SILICON OXIDE LAYER WITH...

METHOD OF FORMING VERTICAL TRANSISTOR HAVING DUAL BOTTOM SPACERS

VERTICAL FIELD-EFFECT-TRANSISTORS HAVING A SILICON OXIDE LAYER WITH...

GATE TIE-DOWN ENABLEMENT WITH INNER SPACER

SELF ALIGNED TOP EXTENSION FORMATION FOR VERTICAL TRANSISTORS

VERTICAL TRANSISTOR TOP EPITAXY SOURCE/DRAIN AND CONTACT STRUCTURE

VERTICAL TRANSISTOR TOP EPITAXY SOURCE/DRAIN AND CONTACT STRUCTURE

AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES

APPROACH TO BOTTOM DIELECTRIC ISOLATION FOR VERTICAL TRANSPORT FIN...

APPROACH TO BOTTOM DIELECTRIC ISOLATION FOR VERTICAL TRANSPORT FIN...

METHOD OF FORMING VERTICAL TRANSISTOR HAVING DUAL BOTTOM SPACERS

GATE TIE-DOWN ENABLEMENT WITH INNER SPACER