Sanjay RANGAN

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Techniques for a multi-step current profile for a phase change memory
- Patent number 11,810,617
- Issue date Nov 7, 2023
- Intel Corporation
- Hemant P. Rao
- G11 - INFORMATION STORAGE
Information Patent Grant
Modified write voltage for memory devices
- Patent number 11,705,197
- Issue date Jul 18, 2023
- Micron Technology, Inc.
- Sandeepan Dasgupta
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for a multi-step current profile for a phase change memory
- Patent number 11,276,462
- Issue date Mar 15, 2022
- Intel Corporation
- Hemant P. Rao
- G11 - INFORMATION STORAGE
Information Patent Grant
Modified write voltage for memory devices
- Patent number 11,170,853
- Issue date Nov 9, 2021
- Micron Technology, Inc.
- Sandeepan Dasgupta
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level cell (MLC) cross-point memory
- Patent number 11,107,523
- Issue date Aug 31, 2021
- Intel Corporation
- Sanjay Rangan
- G11 - INFORMATION STORAGE
Information Patent Grant
Non volatile cross point memory having word line pass transistor wi...
- Patent number 11,100,984
- Issue date Aug 24, 2021
- Intel Corporation
- Koushik Banerjee
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level cell (MLC) techniques and circuits for cross-point memory
- Patent number 10,957,387
- Issue date Mar 23, 2021
- Intel Corporation
- Davide Mantegazza
- G11 - INFORMATION STORAGE
Information Patent Grant
Set technique for phase change memory
- Patent number 10,884,640
- Issue date Jan 5, 2021
- Intel Corporation
- Koushik Banerjee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Tailoring current magnitude and duration during a programming pulse...
- Patent number 10,796,761
- Issue date Oct 6, 2020
- Intel Corporation
- Koushik Banerjee
- G11 - INFORMATION STORAGE
Information Patent Grant
Multistage set procedure for phase change memory
- Patent number 10,783,966
- Issue date Sep 22, 2020
- Intel Corporation
- Sanjay Rangan
- G11 - INFORMATION STORAGE
Information Patent Grant
Multistage set procedure for phase change memory
- Patent number 10,446,229
- Issue date Oct 15, 2019
- Intel Corporation
- Sanjay Rangan
- G11 - INFORMATION STORAGE
Information Patent Grant
Tailoring current magnitude and duration during a programming pulse...
- Patent number 10,360,977
- Issue date Jul 23, 2019
- Intel Corporation
- Koushik Banerjee
- G11 - INFORMATION STORAGE
Information Patent Grant
Set technique for phase change memory
- Patent number 10,248,351
- Issue date Apr 2, 2019
- Intel Corporation
- Koushik Banerjee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Methods for generating random data using phase change materials and...
- Patent number 10,185,818
- Issue date Jan 22, 2019
- Intel Corporation
- Karthik Sarpatwari
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multistage set procedure for phase change memory
- Patent number 9,892,785
- Issue date Feb 13, 2018
- Intel Corporation
- Sanjay Rangan
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrode configurations to increase electro-thermal isolation of p...
- Patent number 9,608,042
- Issue date Mar 28, 2017
- Intel Corporation
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multistage set procedure for phase change memory
- Patent number 9,583,187
- Issue date Feb 28, 2017
- Intel Corporation
- Sanjay Rangan
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for generating random data using phase change materials and...
- Patent number 9,575,727
- Issue date Feb 21, 2017
- Intel Corporation
- Karthik Sarpatwari
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Threshold voltage expansion
- Patent number 9,384,801
- Issue date Jul 5, 2016
- Intel Corporation
- Abhinav Pandey
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrode configurations to increase electro-thermal isolation of p...
- Patent number 9,299,747
- Issue date Mar 29, 2016
- Intel Corporation
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage stabilizing for a memory cell array
- Patent number 9,196,357
- Issue date Nov 24, 2015
- Micron Technology, Inc.
- Karthik Sarpatwari
- G11 - INFORMATION STORAGE
Information Patent Grant
Random read/write performance of probe storage memory devices
- Patent number 8,149,680
- Issue date Apr 3, 2012
- Intel Corporation
- Valluri R. Rao
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
TECHNIQUES FOR A MULTI-STEP CURRENT PROFILE FOR A PHASE CHANGE MEMORY
- Publication number 20220165335
- Publication date May 26, 2022
- Intel Corporation
- Hemant P. RAO
- G11 - INFORMATION STORAGE
Information Patent Application
MODIFIED WRITE VOLTAGE FOR MEMORY DEVICES
- Publication number 20220068385
- Publication date Mar 3, 2022
- Micron Technology, Inc.
- Sandeepan Dasgupta
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES FOR A MULTI-STEP CURRENT PROFILE FOR A PHASE CHANGE MEMORY
- Publication number 20210391005
- Publication date Dec 16, 2021
- Intel Corporation
- Hemant P. RAO
- G11 - INFORMATION STORAGE
Information Patent Application
MODIFIED WRITE VOLTAGE FOR MEMORY DEVICES
- Publication number 20210280244
- Publication date Sep 9, 2021
- Micron Technology, Inc.
- Sandeepan Dasgupta
- G11 - INFORMATION STORAGE
Information Patent Application
NON VOLATILE CROSS POINT MEMORY HAVING WORD LINE PASS TRANSISTOR WI...
- Publication number 20210225444
- Publication date Jul 22, 2021
- Intel Corporation
- Koushik BANERJEE
- G11 - INFORMATION STORAGE
Information Patent Application
MULTISTAGE SET PROCEDURE FOR PHASE CHANGE MEMORY
- Publication number 20200035300
- Publication date Jan 30, 2020
- Sanjay RANGAN
- G11 - INFORMATION STORAGE
Information Patent Application
TAILORING CURRENT MAGNITUDE AND DURATION DURING A PROGRAMMING PULSE...
- Publication number 20190348114
- Publication date Nov 14, 2019
- Intel Corporation
- Koushik Banerjee
- G11 - INFORMATION STORAGE
Information Patent Application
SET TECHNIQUE FOR PHASE CHANGE MEMORY
- Publication number 20190324671
- Publication date Oct 24, 2019
- Intel Corporation
- Koushik Banerjee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SET TECHNIQUE FOR PHASE CHANGE MEMORY
- Publication number 20190102099
- Publication date Apr 4, 2019
- Intel Corporation
- Koushik Banerjee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TAILORING CURRENT MAGNITUDE AND DURATION DURING A PROGRAMMING PULSE...
- Publication number 20190043576
- Publication date Feb 7, 2019
- Intel Corporation
- Koushik Banerjee
- G11 - INFORMATION STORAGE
Information Patent Application
MULTISTAGE SET PROCEDURE FOR PHASE CHANGE MEMORY
- Publication number 20180182456
- Publication date Jun 28, 2018
- Intel Corporation
- Sanjay RANGAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTISTAGE SET PROCEDURE FOR PHASE CHANGE MEMORY
- Publication number 20170169886
- Publication date Jun 15, 2017
- Intel Corporation
- Sanjay RANGAN
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR GENERATING RANDOM DATA USING PHASE CHANGE MATERIALS AND...
- Publication number 20170161488
- Publication date Jun 8, 2017
- Intel Corporation
- Karthik Sarpatwari
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MULTISTAGE SET PROCEDURE FOR PHASE CHANGE MEMORY
- Publication number 20160284404
- Publication date Sep 29, 2016
- Intel Corporation
- Sanjay Rangan
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRODE CONFIGURATIONS TO INCREASE ELECTRO-THERMAL ISOLATION OF P...
- Publication number 20160233271
- Publication date Aug 11, 2016
- Intel Corporation
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR GENERATING RANDOM DATA USING PHASE CHANGE MATERIALS AND...
- Publication number 20160092172
- Publication date Mar 31, 2016
- Karthik Sarpatwari
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
THRESHOLD VOLTAGE EXPANSION
- Publication number 20160049209
- Publication date Feb 18, 2016
- Abhinav PANDEY
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
VOLTAGE STABILIZING FOR A MEMORY CELL ARRAY
- Publication number 20150179255
- Publication date Jun 25, 2015
- Micron Technology, Inc.
- Karthik Sarpatwari
- G11 - INFORMATION STORAGE
Information Patent Application
RANDOM READ/WRITE PERFORMANCE OF PROBE STORAGE MEMORY DEVICES
- Publication number 20100226237
- Publication date Sep 9, 2010
- Valluri R. Rao
- G11 - INFORMATION STORAGE

Sanjay RANGAN

Person

Patents Grantslast 30 patents

Techniques for a multi-step current profile for a phase change memory

Modified write voltage for memory devices

Techniques for a multi-step current profile for a phase change memory

Modified write voltage for memory devices

Multi-level cell (MLC) cross-point memory

Non volatile cross point memory having word line pass transistor wi...

Multi-level cell (MLC) techniques and circuits for cross-point memory

Set technique for phase change memory

Tailoring current magnitude and duration during a programming pulse...

Multistage set procedure for phase change memory

Multistage set procedure for phase change memory

Tailoring current magnitude and duration during a programming pulse...

Set technique for phase change memory

Methods for generating random data using phase change materials and...

Multistage set procedure for phase change memory

Electrode configurations to increase electro-thermal isolation of p...

Multistage set procedure for phase change memory

Methods for generating random data using phase change materials and...

Threshold voltage expansion

Electrode configurations to increase electro-thermal isolation of p...

Voltage stabilizing for a memory cell array

Random read/write performance of probe storage memory devices

Patents Applicationslast 30 patents

TECHNIQUES FOR A MULTI-STEP CURRENT PROFILE FOR A PHASE CHANGE MEMORY

MODIFIED WRITE VOLTAGE FOR MEMORY DEVICES

TECHNIQUES FOR A MULTI-STEP CURRENT PROFILE FOR A PHASE CHANGE MEMORY

MODIFIED WRITE VOLTAGE FOR MEMORY DEVICES

NON VOLATILE CROSS POINT MEMORY HAVING WORD LINE PASS TRANSISTOR WI...

MULTISTAGE SET PROCEDURE FOR PHASE CHANGE MEMORY

TAILORING CURRENT MAGNITUDE AND DURATION DURING A PROGRAMMING PULSE...

SET TECHNIQUE FOR PHASE CHANGE MEMORY

SET TECHNIQUE FOR PHASE CHANGE MEMORY

TAILORING CURRENT MAGNITUDE AND DURATION DURING A PROGRAMMING PULSE...

MULTISTAGE SET PROCEDURE FOR PHASE CHANGE MEMORY

MULTISTAGE SET PROCEDURE FOR PHASE CHANGE MEMORY

METHODS FOR GENERATING RANDOM DATA USING PHASE CHANGE MATERIALS AND...

MULTISTAGE SET PROCEDURE FOR PHASE CHANGE MEMORY

ELECTRODE CONFIGURATIONS TO INCREASE ELECTRO-THERMAL ISOLATION OF P...

METHODS FOR GENERATING RANDOM DATA USING PHASE CHANGE MATERIALS AND...

THRESHOLD VOLTAGE EXPANSION

VOLTAGE STABILIZING FOR A MEMORY CELL ARRAY

RANDOM READ/WRITE PERFORMANCE OF PROBE STORAGE MEMORY DEVICES