Sanjay S. Natarajan

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Selective silicon etch for gate all around transistors
- Patent number 12,062,708
- Issue date Aug 13, 2024
- Applied Materials, Inc.
- Michael Stolfi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D DRAM structure with high mobility channel
- Patent number 11,749,315
- Issue date Sep 5, 2023
- Applied Materials, Inc.
- Chang Seok Kang
- G11 - INFORMATION STORAGE
Information Patent Grant
Conformal high concentration boron doping of semiconductors
- Patent number 11,705,335
- Issue date Jul 18, 2023
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked transistor device
- Patent number 11,682,668
- Issue date Jun 20, 2023
- Applied Materials, Inc.
- Suketu Arun Parikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of testing a gap fill for DRAM
- Patent number 11,621,266
- Issue date Apr 4, 2023
- Applied Materials, Inc.
- Priyadarshi Panda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective silicon etch for gate all around transistors
- Patent number 11,508,828
- Issue date Nov 22, 2022
- Applied Materials, Inc.
- Michael Stolfi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate contact over active regions
- Patent number 11,462,411
- Issue date Oct 4, 2022
- Applied Materials, Inc.
- Gaurav Thareja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact and contact over active gate structures
- Patent number 11,437,273
- Issue date Sep 6, 2022
- Micromaterials LLC
- Yuriy Shusterman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal high concentration boron doping of semiconductors
- Patent number 11,328,928
- Issue date May 10, 2022
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated CMOS source drain formation with advanced control
- Patent number 11,309,404
- Issue date Apr 19, 2022
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D dram structure with high mobility channel
- Patent number 11,295,786
- Issue date Apr 5, 2022
- Applied Materials, Inc.
- Chang Seok Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device having reduced contact...
- Patent number 11,195,923
- Issue date Dec 7, 2021
- Applied Materials, Inc.
- Gaurav Thareja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D-NAND mold
- Patent number 11,189,635
- Issue date Nov 30, 2021
- Applied Materials, Inc.
- Chang Seok Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked transistor device
- Patent number 11,177,254
- Issue date Nov 16, 2021
- Applied Materials, Inc.
- Suketu Arun Parikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gap fill methods of forming buried word lines in DRAM without formi...
- Patent number 11,171,141
- Issue date Nov 9, 2021
- Applied Materials, Inc.
- Priyadarshi Panda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM capacitor module
- Patent number 11,164,938
- Issue date Nov 2, 2021
- Micromaterials LLC
- Uday Mitra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of making a semiconductor device, and...
- Patent number 11,152,479
- Issue date Oct 19, 2021
- Applied Materials, Inc.
- Gaurav Thareja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processing system and method of forming a contact
- Patent number 11,114,320
- Issue date Sep 7, 2021
- Applied Materials, Inc.
- Gaurav Thareja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate contact over active processes
- Patent number 11,004,687
- Issue date May 11, 2021
- Applied Materials, Inc.
- Gaurav Thareja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for smoothing dynamic random access memory bi...
- Patent number 10,903,112
- Issue date Jan 26, 2021
- Applied Materials, Inc.
- Priyadarshi Panda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for creating a fully self-aligned via
- Patent number 10,892,187
- Issue date Jan 12, 2021
- Micromaterials LLC
- Regina Freed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap layer for bit line resistance reduction
- Patent number 10,700,072
- Issue date Jun 30, 2020
- Applied Materials, Inc.
- Priyadarshi Panda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of producing fully self-aligned vias and contacts
- Patent number 10,553,485
- Issue date Feb 4, 2020
- Micromaterials LLC
- Ying Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for substrate fabrication
- Patent number 10,529,602
- Issue date Jan 7, 2020
- Applied Materials, Inc.
- Priyadarshi Panda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with strain-inducing structure in channel
- Patent number 7,473,591
- Issue date Jan 6, 2009
- Intel Corporation
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer film stack for extinction of substrate reflections duri...
- Patent number 7,291,552
- Issue date Nov 6, 2007
- Intel Corporation
- Sanjay S. Natarajan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer film stack for extinction of substrate reflections duri...
- Patent number 7,172,960
- Issue date Feb 6, 2007
- Intel Corporation
- Sanjay S. Natarajan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stepped tip junction with spacer layer
- Patent number 7,112,859
- Issue date Sep 26, 2006
- Intel Corporation
- Ibrahim Ban
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with strain-inducing structure in channel
- Patent number 7,019,326
- Issue date Mar 28, 2006
- Intel Corporation
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELECTIVE SILICON ETCH FOR GATE ALL AROUND TRANSISTORS
- Publication number 20230039074
- Publication date Feb 9, 2023
- Applied Materials, Inc.
- Michael Stolfi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conformal High Concentration Boron Doping Of Semiconductors
- Publication number 20220246432
- Publication date Aug 4, 2022
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated CMOS Source Drain Formation With Advanced Control
- Publication number 20220199804
- Publication date Jun 23, 2022
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI COLOR STACK FOR SELF ALIGNED DUAL PATTERN FORMATION FOR MULTI...
- Publication number 20220130722
- Publication date Apr 28, 2022
- Applied Materials, Inc.
- Suketu Arun PARIKH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D DRAM STRUCTURE WITH HIGH MOBILITY CHANNEL
- Publication number 20220108728
- Publication date Apr 7, 2022
- Applied Materials, Inc.
- Chang Seok Kang
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING REDUCED CONTACT...
- Publication number 20220093749
- Publication date Mar 24, 2022
- Applied Materials, Inc.
- Gaurav THAREJA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAP FILL METHODS FOR DRAM
- Publication number 20220068935
- Publication date Mar 3, 2022
- Applied Materials, Inc.
- Priyadarshi Panda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked Transistor Device
- Publication number 20220068917
- Publication date Mar 3, 2022
- Applied Materials, Inc.
- Suketu Arun Parikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM Capacitor Module
- Publication number 20220013624
- Publication date Jan 13, 2022
- Micromaterials LLC.
- Uday Mitra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE SILICON ETCH FOR GATE ALL AROUND TRANSISTORS
- Publication number 20220005937
- Publication date Jan 6, 2022
- Applied Materials, Inc.
- Michael Stolfi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACT OVER ACTIVE REGIONS
- Publication number 20210249270
- Publication date Aug 12, 2021
- Applied Materials, Inc.
- Gaurav THAREJA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM Capacitor Module
- Publication number 20200312953
- Publication date Oct 1, 2020
- Micromaterials LLC.
- Uday Mitra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-NAND MOLD
- Publication number 20200312874
- Publication date Oct 1, 2020
- Applied Materials, Inc.
- Chang Seok Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAP FILL METHODS FOR DRAM
- Publication number 20200286897
- Publication date Sep 10, 2020
- Applied Materials, Inc.
- Priyadarshi Panda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT AND CONTACT OVER ACTIVE GATE STRUCTURES
- Publication number 20200279773
- Publication date Sep 3, 2020
- Micromaterials LLC.
- Yuriy Shusterman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD OF MAKING A SEMICONDUCTOR DEVICE, AND...
- Publication number 20200258997
- Publication date Aug 13, 2020
- Applied Materials, Inc.
- Gaurav THAREJA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACT OVER ACTIVE PROCESSES
- Publication number 20200258744
- Publication date Aug 13, 2020
- Applied Materials, Inc.
- Gaurav THAREJA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D DRAM STRUCTURE WITH HIGH MOBILITY CHANNEL
- Publication number 20200251151
- Publication date Aug 6, 2020
- Applied Materials, Inc.
- Chang Seok Kang
- G11 - INFORMATION STORAGE
Information Patent Application
Cap Layer For Bit Line Resistance Reduction
- Publication number 20200235104
- Publication date Jul 23, 2020
- Applied Materials, Inc.
- Priyadarshi Panda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESSING SYSTEM AND METHOD OF FORMING A CONTACT
- Publication number 20200203481
- Publication date Jun 25, 2020
- Applied Materials, Inc.
- Gaurav THAREJA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING REDUCED CONTACT...
- Publication number 20200203490
- Publication date Jun 25, 2020
- Applied Materials, Inc.
- Gaurav THAREJA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR SMOOTHING DYNAMIC RANDOM ACCESS MEMORY BI...
- Publication number 20200126844
- Publication date Apr 23, 2020
- Applied Materials, Inc.
- PRIYADARSHI PANDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cap Layer For Bit Line Resistance Reduction
- Publication number 20200126996
- Publication date Apr 23, 2020
- Applied Materials, Inc.
- Priyadarshi Panda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked Transistor Device
- Publication number 20200118996
- Publication date Apr 16, 2020
- Suketu Arun Parikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated CMOS Source Drain Formation With Advanced Control
- Publication number 20200013878
- Publication date Jan 9, 2020
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFORMAL HIGH CONCENTRATION BORON DOPING OF SEMICONDUCTORS
- Publication number 20190385851
- Publication date Dec 19, 2019
- Applied Materials, Inc.
- SRINIVAS GANDIKOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Creating A Fully Self-Aligned Via
- Publication number 20190355620
- Publication date Nov 21, 2019
- Micromaterials LLC.
- Regina Freed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods Of Producing Fully Self-Aligned Vias And Contacts
- Publication number 20180374750
- Publication date Dec 27, 2018
- Micromaterials LLC.
- Ying Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sacrificial capping layer for transistor performance enhancement
- Publication number 20070004114
- Publication date Jan 4, 2007
- Seok-Hee Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of optimization of implant conditions to minimize channelin...
- Publication number 20060202267
- Publication date Sep 14, 2006
- Pushkar Ranade
- H01 - BASIC ELECTRIC ELEMENTS

Sanjay S. Natarajan

Person

Patents Grantslast 30 patents

Selective silicon etch for gate all around transistors

3D DRAM structure with high mobility channel

Conformal high concentration boron doping of semiconductors

Stacked transistor device

Method of testing a gap fill for DRAM

Selective silicon etch for gate all around transistors

Gate contact over active regions

Self-aligned contact and contact over active gate structures

Conformal high concentration boron doping of semiconductors

Integrated CMOS source drain formation with advanced control

3D dram structure with high mobility channel

Method of fabricating a semiconductor device having reduced contact...

3D-NAND mold

Stacked transistor device

Gap fill methods of forming buried word lines in DRAM without formi...

DRAM capacitor module

Semiconductor device, method of making a semiconductor device, and...

Processing system and method of forming a contact

Gate contact over active processes

Methods and apparatus for smoothing dynamic random access memory bi...

Method for creating a fully self-aligned via

Cap layer for bit line resistance reduction

Methods of producing fully self-aligned vias and contacts

Method and apparatus for substrate fabrication

Transistor with strain-inducing structure in channel

Multi-layer film stack for extinction of substrate reflections duri...

Multi-layer film stack for extinction of substrate reflections duri...

Stepped tip junction with spacer layer

Transistor with strain-inducing structure in channel

Patents Applicationslast 30 patents

SELECTIVE SILICON ETCH FOR GATE ALL AROUND TRANSISTORS

Conformal High Concentration Boron Doping Of Semiconductors

Integrated CMOS Source Drain Formation With Advanced Control

MULTI COLOR STACK FOR SELF ALIGNED DUAL PATTERN FORMATION FOR MULTI...

3D DRAM STRUCTURE WITH HIGH MOBILITY CHANNEL

METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING REDUCED CONTACT...

GAP FILL METHODS FOR DRAM

Stacked Transistor Device

DRAM Capacitor Module

SELECTIVE SILICON ETCH FOR GATE ALL AROUND TRANSISTORS

GATE CONTACT OVER ACTIVE REGIONS

DRAM Capacitor Module

3D-NAND MOLD

GAP FILL METHODS FOR DRAM

SELF-ALIGNED CONTACT AND CONTACT OVER ACTIVE GATE STRUCTURES

SEMICONDUCTOR DEVICE, METHOD OF MAKING A SEMICONDUCTOR DEVICE, AND...

GATE CONTACT OVER ACTIVE PROCESSES

3D DRAM STRUCTURE WITH HIGH MOBILITY CHANNEL

Cap Layer For Bit Line Resistance Reduction

PROCESSING SYSTEM AND METHOD OF FORMING A CONTACT

METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING REDUCED CONTACT...

METHODS AND APPARATUS FOR SMOOTHING DYNAMIC RANDOM ACCESS MEMORY BI...

Cap Layer For Bit Line Resistance Reduction

Stacked Transistor Device

Integrated CMOS Source Drain Formation With Advanced Control

CONFORMAL HIGH CONCENTRATION BORON DOPING OF SEMICONDUCTORS

Method For Creating A Fully Self-Aligned Via

Methods Of Producing Fully Self-Aligned Vias And Contacts

Sacrificial capping layer for transistor performance enhancement

Methods of optimization of implant conditions to minimize channelin...