Sarah E. ATANASOV

Person

Beaverton, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistors, memory cells, and arrangements thereof
- Patent number 12,148,734
- Issue date Nov 19, 2024
- Intel Corporation
- Sarah Atanasov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of thin film fin transistor structure
- Patent number 12,080,781
- Issue date Sep 3, 2024
- Intel Corporation
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation layers for thin film transistors and methods of fabrica...
- Patent number 11,955,560
- Issue date Apr 9, 2024
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compute near memory with backend memory
- Patent number 11,812,599
- Issue date Nov 7, 2023
- Intel Corporation
- Abhishek Sharma
- G11 - INFORMATION STORAGE
Information Patent Grant
Quantum dot devices with multiple layers of gate metal
- Patent number 11,699,747
- Issue date Jul 11, 2023
- Intel Corporation
- Hubert C. George
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum dot devices
- Patent number 11,682,701
- Issue date Jun 20, 2023
- Intel Corporation
- Stephanie A. Bojarski
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Staggered lines for interconnect performance improvement and proces...
- Patent number 11,664,305
- Issue date May 30, 2023
- Intel Corporation
- Kevin Lai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compute near memory with backend memory
- Patent number 11,251,186
- Issue date Feb 15, 2022
- Intel Corporation
- Abhishek Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer-based patterning for tight-pitch and low-variability random...
- Patent number 11,189,790
- Issue date Nov 30, 2021
- Intel Corporation
- Kevin L. Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PASSIVATION LAYERS FOR THIN FILM TRANSISTORS AND METHODS OF FABRICA...
- Publication number 20240234579
- Publication date Jul 11, 2024
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS
- Publication number 20240204103
- Publication date Jun 20, 2024
- Intel Corporation
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-...
- Publication number 20240112714
- Publication date Apr 4, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS
- Publication number 20240114695
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT
- Publication number 20240112731
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- G11 - INFORMATION STORAGE
Information Patent Application
STACKED TRANSISTOR STRUCTURES WITH DIVERSE GATE MATERIALS
- Publication number 20230197728
- Publication date Jun 22, 2023
- Intel Corporation
- Nicole K. Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE LAYER DOPING ON A SUB CHANNEL OF A TRANSISTOR STRUCTURE
- Publication number 20230111323
- Publication date Apr 13, 2023
- Intel Corporation
- Rahul RAMAMURTHY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH HIGH DIELECTRIC CONSTANT INTERFACIAL LAYERING
- Publication number 20230097184
- Publication date Mar 30, 2023
- Intel Corporation
- Sarah ATANASOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL FERROELECTRIC RANDOM ACCESS MEMORY (3D FRAM) WITH...
- Publication number 20230101111
- Publication date Mar 30, 2023
- Intel Corporation
- Shriram SHIVARAMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELIMINATION OF SUB-FIN LEAKAGE IN STACKED NANOSHEET ARCHITECTURES
- Publication number 20230099540
- Publication date Mar 30, 2023
- Intel Corporation
- Sarah ATANASOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K OR FERROELECTRIC GATE OXIDE WITH ZERO-SIO2 IL PROCESS FOR TR...
- Publication number 20230100952
- Publication date Mar 30, 2023
- Intel Corporation
- I-Cheng TUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES WITH REDUCED READ DISTURBANCE EFFECTS
- Publication number 20230100860
- Publication date Mar 30, 2023
- Intel Corporation
- Sou-Chi CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GROWTH OF HIGH-K OXIDE ON CHANNEL OF GATE-ALL-AROUND TRAN...
- Publication number 20230100505
- Publication date Mar 30, 2023
- Intel Corporation
- Ashish Verma PENUMATCHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC RANDOM ACCESS MEMORY (FRAM) DEVICES WITH ENHANCED CAP...
- Publication number 20230097736
- Publication date Mar 30, 2023
- Intel Corporation
- Shriram SHIVARAMAN
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL TRANSISTOR WITH FIN-SHAPED GATE
- Publication number 20230092244
- Publication date Mar 23, 2023
- Intel Corporation
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN-FILM TRANSISTORS WITH SHARED CONTACTS
- Publication number 20230093064
- Publication date Mar 23, 2023
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BILAYER MEMORY STACKING WITH LINES SHARED BETWEEN BOTTOM AND TOP ME...
- Publication number 20230067765
- Publication date Mar 2, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF THIN FILM FIN TRANSISTOR STRUCTURE
- Publication number 20220199807
- Publication date Jun 23, 2022
- Intel Corporation
- Noriyuki SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTORS HAVING A BACKSIDE CHANNEL CONTACT FOR HIGH DE...
- Publication number 20220199628
- Publication date Jun 23, 2022
- Intel Corporation
- Noriyuki SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS, MEMORY CELLS, AND ARRANGEMENTS THEREOF
- Publication number 20220189913
- Publication date Jun 16, 2022
- Intel Corporation
- Sarah Atanasov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS, MEMORY CELLS, AND ARRANGEMENTS THEREOF
- Publication number 20220189957
- Publication date Jun 16, 2022
- Intel Corporation
- Sarah Atanasov
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSISTOR CHANNEL MATERIALS
- Publication number 20220190121
- Publication date Jun 16, 2022
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPUTE NEAR MEMORY WITH BACKEND MEMORY
- Publication number 20220165735
- Publication date May 26, 2022
- Intel Corporation
- Abhishek SHARMA
- G11 - INFORMATION STORAGE
Information Patent Application
DAMASCENE INTERCONNECT STRUCTURES WITH LOW RESISTANCE VIAS FOR INTE...
- Publication number 20220102268
- Publication date Mar 31, 2022
- Intel Corporation
- Urusa Alaan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION LAYERS FOR THIN FILM TRANSISTORS AND METHODS OF FABRICA...
- Publication number 20210408291
- Publication date Dec 30, 2021
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAGGERED LINES FOR INTERCONNECT PERFORMANCE IMPROVEMENT AND PROCES...
- Publication number 20200411427
- Publication date Dec 31, 2020
- Intel Corporation
- Kevin Lai LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTUM DOT DEVICES WITH MULTIPLE LAYERS OF GATE METAL
- Publication number 20200312989
- Publication date Oct 1, 2020
- Intel Corporation
- Hubert C. George
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
QUANTUM DOT DEVICES
- Publication number 20200312963
- Publication date Oct 1, 2020
- Intel Corporation
- Stephanie A. Bojarski
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
COMPUTE NEAR MEMORY WITH BACKEND MEMORY
- Publication number 20200279850
- Publication date Sep 3, 2020
- Intel Corporation
- Abhishek SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER-BASED PATTERNING FOR TIGHT-PITCH AND LOW-VARIABILITY RANDOM...
- Publication number 20190165270
- Publication date May 30, 2019
- Intel Corporation
- Kevin L. LIN
- H01 - BASIC ELECTRIC ELEMENTS

Sarah E. ATANASOV

Person

Patents Grantslast 30 patents

Transistors, memory cells, and arrangements thereof

Fabrication of thin film fin transistor structure

Passivation layers for thin film transistors and methods of fabrica...

Compute near memory with backend memory

Quantum dot devices with multiple layers of gate metal

Quantum dot devices

Staggered lines for interconnect performance improvement and proces...

Compute near memory with backend memory

Spacer-based patterning for tight-pitch and low-variability random...

Patents Applicationslast 30 patents

PASSIVATION LAYERS FOR THIN FILM TRANSISTORS AND METHODS OF FABRICA...

TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS

SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-...

HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS

MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT

STACKED TRANSISTOR STRUCTURES WITH DIVERSE GATE MATERIALS

OXIDE LAYER DOPING ON A SUB CHANNEL OF A TRANSISTOR STRUCTURE

INTEGRATED CIRCUITS WITH HIGH DIELECTRIC CONSTANT INTERFACIAL LAYERING

THREE-DIMENSIONAL FERROELECTRIC RANDOM ACCESS MEMORY (3D FRAM) WITH...

ELIMINATION OF SUB-FIN LEAKAGE IN STACKED NANOSHEET ARCHITECTURES

HIGH-K OR FERROELECTRIC GATE OXIDE WITH ZERO-SIO2 IL PROCESS FOR TR...

MEMORY DEVICES WITH REDUCED READ DISTURBANCE EFFECTS

SELECTIVE GROWTH OF HIGH-K OXIDE ON CHANNEL OF GATE-ALL-AROUND TRAN...

FERROELECTRIC RANDOM ACCESS MEMORY (FRAM) DEVICES WITH ENHANCED CAP...

THREE-DIMENSIONAL TRANSISTOR WITH FIN-SHAPED GATE

THIN-FILM TRANSISTORS WITH SHARED CONTACTS

BILAYER MEMORY STACKING WITH LINES SHARED BETWEEN BOTTOM AND TOP ME...

FABRICATION OF THIN FILM FIN TRANSISTOR STRUCTURE

THIN FILM TRANSISTORS HAVING A BACKSIDE CHANNEL CONTACT FOR HIGH DE...

TRANSISTORS, MEMORY CELLS, AND ARRANGEMENTS THEREOF

TRANSISTORS, MEMORY CELLS, AND ARRANGEMENTS THEREOF

TRANSISTOR CHANNEL MATERIALS

COMPUTE NEAR MEMORY WITH BACKEND MEMORY

DAMASCENE INTERCONNECT STRUCTURES WITH LOW RESISTANCE VIAS FOR INTE...

PASSIVATION LAYERS FOR THIN FILM TRANSISTORS AND METHODS OF FABRICA...

STAGGERED LINES FOR INTERCONNECT PERFORMANCE IMPROVEMENT AND PROCES...

QUANTUM DOT DEVICES WITH MULTIPLE LAYERS OF GATE METAL

QUANTUM DOT DEVICES

COMPUTE NEAR MEMORY WITH BACKEND MEMORY

SPACER-BASED PATTERNING FOR TIGHT-PITCH AND LOW-VARIABILITY RANDOM...