Sarah McTaggart

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Essex Junction, VT, US

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Patents Grantslast 30 patents

Information Patent Grant
Field-effect transistors having a gate electrode positioned inside...
- Patent number 12,230,673
- Issue date Feb 18, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Michel Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical bipolar junction transistor and method
- Patent number 11,869,941
- Issue date Jan 9, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Sarah A. McTaggart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with undercut extrinsic base reg...
- Patent number 11,362,201
- Issue date Jun 14, 2022
- GLOBALFOUNDRIES U.S. INC.
- Sarah McTaggart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with multiple emitter fingers an...
- Patent number 10,312,356
- Issue date Jun 4, 2019
- GLOBALFOUNDRIES Inc.
- Qizhi Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
IC STRUCTURE WITH GATE ELECTRODE FULLY WITHIN V-SHAPED CAVITY
- Publication number 20240178290
- Publication date May 30, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Megan Lydon-Nuhfer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES ISOLATED BY POROUS SEMICONDUCTOR MA...
- Publication number 20240088157
- Publication date Mar 14, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Michel Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR
- Publication number 20230352570
- Publication date Nov 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Mark D. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS HAVING A GATE ELECTRODE POSITIONED INSIDE...
- Publication number 20230317776
- Publication date Oct 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Michel Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL BIPOLAR JUNCTION TRANSISTOR AND METHOD
- Publication number 20230268394
- Publication date Aug 24, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Sarah A. McTaggart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS WITH UNDERCUT EXTRINSIC BASE REG...
- Publication number 20220190145
- Publication date Jun 16, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Sarah McTaggart
- H01 - BASIC ELECTRIC ELEMENTS