Sarath Puthenthermadam

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-volatile memory with optimized operation sequence
- Patent number 12,153,801
- Issue date Nov 26, 2024
- SANDISK TECHNOLOGIES LLC
- Yihang Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Early detection of programming failure for non-volatile memory
- Patent number 12,148,489
- Issue date Nov 19, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with adapting erase process
- Patent number 12,147,695
- Issue date Nov 19, 2024
- SANDISK TECHNOLOGIES LLC
- Longju Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile memory with differential temperature compensation for...
- Patent number 12,094,537
- Issue date Sep 17, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Program voltage dependent program source levels
- Patent number 11,972,801
- Issue date Apr 30, 2024
- SanDisk Technologies, LLC
- Xue Pitner
- G11 - INFORMATION STORAGE
Information Patent Grant
Stress test for grown bad blocks
- Patent number 11,967,388
- Issue date Apr 23, 2024
- Western Digital Technologies, Inc.
- Sarath Puthenthermadam
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with differential temperature compensation for...
- Patent number 11,894,071
- Issue date Feb 6, 2024
- SanDisk Technologies LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Temperature compensation for unselected sub-block inhibit bias for...
- Patent number 11,636,905
- Issue date Apr 25, 2023
- SanDisk Technologies LLC
- Sarath Puthenthermadam
- G11 - INFORMATION STORAGE
Information Patent Grant
Smart erase scheme
- Patent number 11,355,198
- Issue date Jun 7, 2022
- SanDisk Technologies LLC
- Fanqi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hole pre-charge scheme using gate induced drain leakage generation
- Patent number 11,211,392
- Issue date Dec 28, 2021
- SanDisk Technologies LLC
- Sarath Puthenthermadam
- G11 - INFORMATION STORAGE
Information Patent Grant
Peak and average current reduction for sub block memory operation
- Patent number 11,189,351
- Issue date Nov 30, 2021
- SanDisk Technologies LLC
- Yu-Chung Lien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source side precharge and boosting improvement for reverse order pr...
- Patent number 11,081,162
- Issue date Aug 3, 2021
- SanDisk Technologies LLC
- Sarath Puthenthermadam
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method for programming non-volatile memory during burst...
- Patent number 10,714,169
- Issue date Jul 14, 2020
- SanDisk Technologies LLC
- Phil Reusswig
- G11 - INFORMATION STORAGE
Information Patent Grant
Fast detection of defective memory block to prevent neighbor plane...
- Patent number 10,529,435
- Issue date Jan 7, 2020
- SanDisk Technologies LLC
- Sarath Puthenthermadam
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and apparatus for programming flash based storage using segm...
- Patent number 10,509,598
- Issue date Dec 17, 2019
- Western Digital Technologies, Inc.
- Navneeth Kankani
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Dynamic anneal characteristics for annealing non-volatile memory
- Patent number 10,467,134
- Issue date Nov 5, 2019
- SANDISK TECHNOLOGIES LLC
- Navneeth Kankani
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
First read countermeasures in memory
- Patent number 10,229,744
- Issue date Mar 12, 2019
- SanDisk Technologies LLC
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with multi-pass programming
- Patent number 10,068,656
- Issue date Sep 4, 2018
- SanDisk Technologies LLC
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Grant
First read countermeasures in memory
- Patent number 10,026,486
- Issue date Jul 17, 2018
- SanDisk Technologies LLC
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Grant
State-dependent read compensation
- Patent number 9,805,809
- Issue date Oct 31, 2017
- SanDisk Technologies LLC
- Zhenming Zhou
- G11 - INFORMATION STORAGE
Information Patent Grant
Overheat prevention for annealing non-volatile memory
- Patent number 9,761,290
- Issue date Sep 12, 2017
- SanDisk Technologies LLC
- Navneeth Kankani
- G11 - INFORMATION STORAGE
Information Patent Grant
Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells
- Patent number 9,747,987
- Issue date Aug 29, 2017
- Cypress Semiconductor Corporation
- Venkatraman Prabhakar
- G11 - INFORMATION STORAGE
Information Patent Grant
State dependent sensing for wordline interference correction
- Patent number 9,721,652
- Issue date Aug 1, 2017
- SanDisk Technologies LLC
- Sarath Puthenthermadam
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile storage system with defect detetction and early progra...
- Patent number 9,570,160
- Issue date Feb 14, 2017
- SanDisk Technologies LLC
- Grishma Shah
- G11 - INFORMATION STORAGE
Information Patent Grant
Read scrub with adaptive counter management
- Patent number 9,552,171
- Issue date Jan 24, 2017
- SanDisk Technologies LLC
- Yichao Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells
- Patent number 9,378,821
- Issue date Jun 28, 2016
- Cypress Semiconductor Corporation
- Venkatraman Prabhakar
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory cells and methods of making such cells
- Patent number 8,897,067
- Issue date Nov 25, 2014
- Cypress Semiconductor Corporation
- Venkatraman Prabhakar
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NON-VOLATILE MEMORY WITH ADAPTING ERASE PROCESS
- Publication number 20240319905
- Publication date Sep 26, 2024
- SANDISK TECHNOLOGIES LLC
- Longju Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
VARIABLE READ METHOD FOR READ TIME PERFORMANCE IMPROVEMENT OF NON-V...
- Publication number 20240282363
- Publication date Aug 22, 2024
- Western Digital Technologies, Inc.
- Albert Chen
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH REDUCED NEIGHBORING WORD LINE...
- Publication number 20240237344
- Publication date Jul 11, 2024
- SANDISK TECHNOLOGIES LLC
- Ramy Nashed Bassely SAID
Information Patent Application
APPARATUS AND METHODS FOR SMART VERIFY WITH ADAPTIVE VOLTAGE OFFSET
- Publication number 20240203512
- Publication date Jun 20, 2024
- SANDISK TECHNOLOGIES LLC
- Longju Liu
- G11 - INFORMATION STORAGE
Information Patent Application
EARLY PROGRAM TERMINATION WITH ADAPTIVE TEMPERATURE COMPENSATION
- Publication number 20240168661
- Publication date May 23, 2024
- SANDISK TECHNOLOGIES LLC
- Sarath Puthenthermadam
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STRESS TEST FOR GROWN BAD BLOCKS
- Publication number 20240055063
- Publication date Feb 15, 2024
- Western Digital Technologies, Inc.
- Sarath Puthenthermadam
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH OPTIMIZED OPERATION SEQUENCE
- Publication number 20240036740
- Publication date Feb 1, 2024
- SANDISK TECHNOLOGIES LLC
- Yihang Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
EARLY DETECTION OF PROGRAMMING FAILURE FOR NON-VOLATILE MEMORY
- Publication number 20240038315
- Publication date Feb 1, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Application
CELSRC VOLTAGE SEPARATION BETWEEN SLC AND XLC FOR SLC PROGRAM AVERA...
- Publication number 20230253049
- Publication date Aug 10, 2023
- SANDISK TECHNOLOGIES LLC
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAM VOLTAGE DEPENDENT PROGRAM SOURCE LEVELS
- Publication number 20230253047
- Publication date Aug 10, 2023
- SANDISK TECHNOLOGIES LLC
- Xue Pitner
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH DIFFERENTIAL TEMPERATURE COMPENSATION FOR...
- Publication number 20230197168
- Publication date Jun 22, 2023
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH DIFFERENTIAL TEMPERATURE COMPENSATION FOR...
- Publication number 20230186996
- Publication date Jun 15, 2023
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Application
TEMPERATURE COMPENSATION FOR UNSELECTED SUB-BLOCK INHIBIT BIAS FOR...
- Publication number 20220180948
- Publication date Jun 9, 2022
- SANDISK TECHNOLOGIES LLC
- Sarath Puthenthermadam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HOLE PRE-CHARGE SCHEME USING GATE INDUCED DRAIN LEAKAGE GENERATION
- Publication number 20210408024
- Publication date Dec 30, 2021
- SANDISK TECHNOLOGIES LLC
- Sarath Puthenthermadam
- G11 - INFORMATION STORAGE
Information Patent Application
PEAK AND AVERAGE CURRENT REDUCTION FOR SUB BLOCK MEMORY OPERATION
- Publication number 20210304822
- Publication date Sep 30, 2021
- SANDISK TECHNOLOGIES LLC
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Application
SOURCE SIDE PRECHARGE AND BOOSTING IMPROVEMENT FOR REVERSE ORDER PR...
- Publication number 20210264964
- Publication date Aug 26, 2021
- SANDISK TECHNOLOGIES LLC
- Sarath Puthenthermadam
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND APPARATUS FOR PROGRAMMING FLASH BASED STORAGE USING SEGM...
- Publication number 20190250851
- Publication date Aug 15, 2019
- Western Digital Technologies, Inc.
- Navneeth Kankani
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FAST DETECTION OF DEFECTIVE MEMORY BLOCK TO PREVENT NEIGHBOR PLANE...
- Publication number 20190214100
- Publication date Jul 11, 2019
- SanDisk Technologies LLC
- Sarath Puthenthermadam
- G11 - INFORMATION STORAGE
Information Patent Application
FIRST READ COUNTERMEASURES IN MEMORY
- Publication number 20180254090
- Publication date Sep 6, 2018
- SanDisk Technologies LLC
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH MULTI-PASS PROGRAMMING
- Publication number 20180182463
- Publication date Jun 28, 2018
- SanDisk Technologies LLC
- Deepanshu Dutta
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DYNAMIC ANNEAL CHARACTERISTICS FOR ANNEALING NON-VOLATILE MEMORY
- Publication number 20180060230
- Publication date Mar 1, 2018
- SanDisk Technologies LLC
- Navneeth Kankani
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
State Dependent Sensing For Wordline Interference Correction
- Publication number 20170140814
- Publication date May 18, 2017
- SanDisk Technologies LLC
- Sarath Puthenthermadam
- G11 - INFORMATION STORAGE
Information Patent Application
Read Scrub with Adaptive Counter Management
- Publication number 20160124679
- Publication date May 5, 2016
- SANDISK TECHNOLOGIES INC.
- Yichao Huang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NONVOLATILE MEMORY CELLS AND METHODS OF MAKING SUCH CELLS
- Publication number 20140264552
- Publication date Sep 18, 2014
- CYPRESS SEMICONDUCTOR CORPORATION
- Venkatraman Prabhakar
- G11 - INFORMATION STORAGE

Sarath Puthenthermadam

Person

Patents Grantslast 30 patents

Non-volatile memory with optimized operation sequence

Early detection of programming failure for non-volatile memory

Non-volatile memory with adapting erase process

Non-volatile memory with differential temperature compensation for...

Program voltage dependent program source levels

Stress test for grown bad blocks

Non-volatile memory with differential temperature compensation for...

Temperature compensation for unselected sub-block inhibit bias for...

Smart erase scheme

Hole pre-charge scheme using gate induced drain leakage generation

Peak and average current reduction for sub block memory operation

Source side precharge and boosting improvement for reverse order pr...

System and method for programming non-volatile memory during burst...

Fast detection of defective memory block to prevent neighbor plane...

Method and apparatus for programming flash based storage using segm...

Dynamic anneal characteristics for annealing non-volatile memory

First read countermeasures in memory

Non-volatile memory with multi-pass programming

First read countermeasures in memory

State-dependent read compensation

Overheat prevention for annealing non-volatile memory

Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells

State dependent sensing for wordline interference correction

Non-volatile storage system with defect detetction and early progra...

Read scrub with adaptive counter management

Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells

Nonvolatile memory cells and methods of making such cells

Patents Applicationslast 30 patents

NON-VOLATILE MEMORY WITH ADAPTING ERASE PROCESS

VARIABLE READ METHOD FOR READ TIME PERFORMANCE IMPROVEMENT OF NON-V...

THREE-DIMENSIONAL MEMORY DEVICE WITH REDUCED NEIGHBORING WORD LINE...

APPARATUS AND METHODS FOR SMART VERIFY WITH ADAPTIVE VOLTAGE OFFSET

EARLY PROGRAM TERMINATION WITH ADAPTIVE TEMPERATURE COMPENSATION

STRESS TEST FOR GROWN BAD BLOCKS

NON-VOLATILE MEMORY WITH OPTIMIZED OPERATION SEQUENCE

EARLY DETECTION OF PROGRAMMING FAILURE FOR NON-VOLATILE MEMORY

CELSRC VOLTAGE SEPARATION BETWEEN SLC AND XLC FOR SLC PROGRAM AVERA...

PROGRAM VOLTAGE DEPENDENT PROGRAM SOURCE LEVELS

NON-VOLATILE MEMORY WITH DIFFERENTIAL TEMPERATURE COMPENSATION FOR...

NON-VOLATILE MEMORY WITH DIFFERENTIAL TEMPERATURE COMPENSATION FOR...

TEMPERATURE COMPENSATION FOR UNSELECTED SUB-BLOCK INHIBIT BIAS FOR...

HOLE PRE-CHARGE SCHEME USING GATE INDUCED DRAIN LEAKAGE GENERATION

PEAK AND AVERAGE CURRENT REDUCTION FOR SUB BLOCK MEMORY OPERATION

SOURCE SIDE PRECHARGE AND BOOSTING IMPROVEMENT FOR REVERSE ORDER PR...

METHOD AND APPARATUS FOR PROGRAMMING FLASH BASED STORAGE USING SEGM...

FAST DETECTION OF DEFECTIVE MEMORY BLOCK TO PREVENT NEIGHBOR PLANE...

FIRST READ COUNTERMEASURES IN MEMORY

NON-VOLATILE MEMORY WITH MULTI-PASS PROGRAMMING

DYNAMIC ANNEAL CHARACTERISTICS FOR ANNEALING NON-VOLATILE MEMORY

State Dependent Sensing For Wordline Interference Correction

Read Scrub with Adaptive Counter Management

NONVOLATILE MEMORY CELLS AND METHODS OF MAKING SUCH CELLS