Sateesh Koka

Person

Milpitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Memory device containing cobalt silicide control gate electrodes an...
- Patent number 9,842,907
- Issue date Dec 12, 2017
- SanDisk Technologies LLC
- Raghuveer S. Makala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Differential etch of metal oxide blocking dielectric layer for thre...
- Patent number 9,842,857
- Issue date Dec 12, 2017
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Molybdenum-containing conductive layers for control gate electrodes...
- Patent number 9,780,182
- Issue date Oct 3, 2017
- SanDisk Technologies LLC
- Somesh Peri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having a shaped epitaxial channel...
- Patent number 9,754,958
- Issue date Sep 5, 2017
- SanDisk Technologies LLC
- Jayavel Pachamuthu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory structure with multi-component contact via...
- Patent number 9,698,152
- Issue date Jul 4, 2017
- SanDisk Technologies LLC
- Somesh Peri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices containing memory block bridges
- Patent number 9,679,906
- Issue date Jun 13, 2017
- SanDisk Technologies LLC
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalinity-dependent aluminum oxide etching for self-aligned bloc...
- Patent number 9,659,955
- Issue date May 23, 2017
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral stack of cobalt and a cobalt-semiconductor alloy for contro...
- Patent number 9,646,975
- Issue date May 9, 2017
- SanDisk Technologies LLC
- Somesh Peri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NAND memory strings and methods of fabrication thereof
- Patent number 9,646,990
- Issue date May 9, 2017
- SanDisk Technologies LLC
- Sateesh Koka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Differential etch of metal oxide blocking dielectric layer for thre...
- Patent number 9,613,977
- Issue date Apr 4, 2017
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cobalt-containing conductive layers for control gate electrodes in...
- Patent number 9,576,966
- Issue date Feb 21, 2017
- SanDisk Technologies LLC
- Somesh Peri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal word lines for three dimensional memory devices
- Patent number 9,570,455
- Issue date Feb 14, 2017
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having a single layer channel and...
- Patent number 9,530,785
- Issue date Dec 27, 2016
- SanDisk Technologies LLC
- Sateesh Koka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-semiconductor alloy region for enhancing on current in a thre...
- Patent number 9,524,977
- Issue date Dec 20, 2016
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional memory device with blocking dielectric having enh...
- Patent number 9,515,079
- Issue date Dec 6, 2016
- SanDisk Technologies LLC
- Sateesh Koka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ruthenium nucleation layer for control gate electrodes in a memory...
- Patent number 9,496,419
- Issue date Nov 15, 2016
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective blocking dielectric formation in a three-dimensional memo...
- Patent number 9,484,357
- Issue date Nov 1, 2016
- SANDISK TECHNOLOGIES LLC
- Raghuveer S. Makala
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure with concave blocking dielectric sidewall a...
- Patent number 9,478,558
- Issue date Oct 25, 2016
- SanDisk Technologies LLC
- Sateesh Koka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a vertical NAND device using a sacrificial layer w...
- Patent number 9,449,982
- Issue date Sep 20, 2016
- SanDisk Technologies LLC
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fluorine-free word lines for three-dimensional memory devices
- Patent number 9,397,046
- Issue date Jul 19, 2016
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NAND memory strings and methods of fabrication thereof
- Patent number 9,379,132
- Issue date Jun 28, 2016
- SanDisk Technologies Inc.
- Sateesh Koka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a three dimensional NAND device
- Patent number 9,305,849
- Issue date Apr 5, 2016
- SanDisk Technologies Inc.
- Masanori Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional NAND device and method of making thereof
- Patent number 9,236,396
- Issue date Jan 12, 2016
- SanDisk Technologies Inc.
- Sateesh Koka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
COBALT-CONTAINING CONDUCTIVE LAYERS FOR CONTROL GATE ELECTRODES IN...
- Publication number 20170287925
- Publication date Oct 5, 2017
- SANDISK TECHNOLOGIES INC.
- Raghuveer S. MAKALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENTIAL ETCH OF METAL OXIDE BLOCKING DIELECTRIC LAYER FOR THRE...
- Publication number 20170162597
- Publication date Jun 8, 2017
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING A SHAPED EPITAXIAL CHANNEL...
- Publication number 20170125437
- Publication date May 4, 2017
- SANDISK TECHNOLOGIES INC.
- Jayavel Pachamuthu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTALINITY-DEPENDENT ALUMINUM OXIDE ETCHING FOR SELF-ALIGNED BLOC...
- Publication number 20170125436
- Publication date May 4, 2017
- SANDISK TECHNOLOGIES INC.
- Rahul SHARANGPANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE CONTAINING COBALT SILICIDE CONTROL GATE ELECTRODES AN...
- Publication number 20170092733
- Publication date Mar 30, 2017
- SANDISK TECHNOLOGIES INC.
- Raghuveer S. MAKALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL STACK OF COBALT AND A COBALT-SEMICONDUCTOR ALLOY FOR CONTRO...
- Publication number 20170084618
- Publication date Mar 23, 2017
- SANDISK TECHNOLOGIES INC.
- Somesh PERI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES CONTAINING MEMORY BLOCK BRIDGES
- Publication number 20170047334
- Publication date Feb 16, 2017
- SANDISK TECHNOLOGIES INC.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENTIAL ETCH OF METAL OXIDE BLOCKING DIELECTRIC LAYER FOR THRE...
- Publication number 20160379989
- Publication date Dec 29, 2016
- SanDisk Technologies, Inc.
- Rahul SHARANGPANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-SEMICONDUCTOR ALLOY REGION FOR ENHANCING ON CURRENT IN A THRE...
- Publication number 20160307908
- Publication date Oct 20, 2016
- SanDisk Technologies, Inc.
- Rahul SHARANGPANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND MEMORY STRINGS AND METHODS OF FABRICATION THEREOF
- Publication number 20160284730
- Publication date Sep 29, 2016
- SanDisk Technologies LLC
- Sateesh KOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOLYBDENUM-CONTAINING CONDUCTIVE LAYERS FOR CONTROL GATE ELECTRODES...
- Publication number 20160225866
- Publication date Aug 4, 2016
- SANDISK TECHNOLOGIES INC.
- Somesh Peri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH CONCAVE BLOCKING DIELECTRIC SIDEWALL A...
- Publication number 20160211272
- Publication date Jul 21, 2016
- SANDISK TECHNOLOGIES INC.
- Sateesh Koka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL MEMORY DEVICE WITH BLOCKING DIELECTRIC HAVING ENH...
- Publication number 20160172366
- Publication date Jun 16, 2016
- SanDisk Technologies, Inc.
- Sateesh KOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE BLOCKING DIELECTRIC FORMATION IN A THREE-DIMENSIONAL MEMO...
- Publication number 20160172370
- Publication date Jun 16, 2016
- SanDisk Technologies, Inc.
- Raghuveer S. MAKALA
- G11 - INFORMATION STORAGE
Information Patent Application
METAL WORD LINES FOR THREE DIMENSIONAL MEMORY DEVICES
- Publication number 20160148945
- Publication date May 26, 2016
- SanDisk Technologies, Inc.
- Rahul SHARANGPANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RUTHENIUM NUCLEATION LAYER FOR CONTROL GATE ELECTRODES IN A MEMORY...
- Publication number 20160149049
- Publication date May 26, 2016
- SanDisk Technologies, Inc.
- Rahul SHARANGPANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY STRUCTURE WITH MULTI-COMPONENT CONTACT VIA...
- Publication number 20160141294
- Publication date May 19, 2016
- SANDISK TECHNOLOGIES INC.
- Somesh Peri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND MEMORY STRINGS AND METHODS OF FABRICATION THEREOF
- Publication number 20160118397
- Publication date Apr 28, 2016
- SanDisk Technologies, Inc.
- Sateesh KOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A VERTICAL NAND DEVICE USING A SACRIFICIAL LAYER W...
- Publication number 20150294978
- Publication date Oct 15, 2015
- SanDisk Technologies, Inc.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COBALT-CONTAINING CONDUCTIVE LAYERS FOR CONTROL GATE ELECTRODES IN...
- Publication number 20150179662
- Publication date Jun 25, 2015
- SANDISK TECHNOLOGIES INC.
- Raghuveer S. MAKALA
- H01 - BASIC ELECTRIC ELEMENTS

Sateesh Koka

Person

Patents Grantslast 30 patents

Memory device containing cobalt silicide control gate electrodes an...

Differential etch of metal oxide blocking dielectric layer for thre...

Molybdenum-containing conductive layers for control gate electrodes...

Three-dimensional memory devices having a shaped epitaxial channel...

Three-dimensional memory structure with multi-component contact via...

Three-dimensional memory devices containing memory block bridges

Crystalinity-dependent aluminum oxide etching for self-aligned bloc...

Lateral stack of cobalt and a cobalt-semiconductor alloy for contro...

NAND memory strings and methods of fabrication thereof

Differential etch of metal oxide blocking dielectric layer for thre...

Cobalt-containing conductive layers for control gate electrodes in...

Metal word lines for three dimensional memory devices

Three-dimensional memory devices having a single layer channel and...

Metal-semiconductor alloy region for enhancing on current in a thre...

Three dimensional memory device with blocking dielectric having enh...

Ruthenium nucleation layer for control gate electrodes in a memory...

Selective blocking dielectric formation in a three-dimensional memo...

Semiconductor structure with concave blocking dielectric sidewall a...

Method of making a vertical NAND device using a sacrificial layer w...

Fluorine-free word lines for three-dimensional memory devices

NAND memory strings and methods of fabrication thereof

Method of making a three dimensional NAND device

Three dimensional NAND device and method of making thereof

Patents Applicationslast 30 patents

COBALT-CONTAINING CONDUCTIVE LAYERS FOR CONTROL GATE ELECTRODES IN...

DIFFERENTIAL ETCH OF METAL OXIDE BLOCKING DIELECTRIC LAYER FOR THRE...

THREE-DIMENSIONAL MEMORY DEVICES HAVING A SHAPED EPITAXIAL CHANNEL...

CRYSTALINITY-DEPENDENT ALUMINUM OXIDE ETCHING FOR SELF-ALIGNED BLOC...

MEMORY DEVICE CONTAINING COBALT SILICIDE CONTROL GATE ELECTRODES AN...

LATERAL STACK OF COBALT AND A COBALT-SEMICONDUCTOR ALLOY FOR CONTRO...

THREE-DIMENSIONAL MEMORY DEVICES CONTAINING MEMORY BLOCK BRIDGES

DIFFERENTIAL ETCH OF METAL OXIDE BLOCKING DIELECTRIC LAYER FOR THRE...

METAL-SEMICONDUCTOR ALLOY REGION FOR ENHANCING ON CURRENT IN A THRE...

NAND MEMORY STRINGS AND METHODS OF FABRICATION THEREOF

MOLYBDENUM-CONTAINING CONDUCTIVE LAYERS FOR CONTROL GATE ELECTRODES...

SEMICONDUCTOR STRUCTURE WITH CONCAVE BLOCKING DIELECTRIC SIDEWALL A...

THREE DIMENSIONAL MEMORY DEVICE WITH BLOCKING DIELECTRIC HAVING ENH...

SELECTIVE BLOCKING DIELECTRIC FORMATION IN A THREE-DIMENSIONAL MEMO...

METAL WORD LINES FOR THREE DIMENSIONAL MEMORY DEVICES

RUTHENIUM NUCLEATION LAYER FOR CONTROL GATE ELECTRODES IN A MEMORY...

THREE-DIMENSIONAL MEMORY STRUCTURE WITH MULTI-COMPONENT CONTACT VIA...

NAND MEMORY STRINGS AND METHODS OF FABRICATION THEREOF

METHOD OF MAKING A VERTICAL NAND DEVICE USING A SACRIFICIAL LAYER W...

COBALT-CONTAINING CONDUCTIVE LAYERS FOR CONTROL GATE ELECTRODES IN...