Satoru Mayuzumi

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including stress application layer
- Patent number 12,087,858
- Issue date Sep 10, 2024
- Sony Group Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,868,177
- Issue date Dec 15, 2020
- Sony Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having curved gate electrode aligned with curv...
- Patent number 10,854,751
- Issue date Dec 1, 2020
- Sony Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having curved gate electrode aligned with curv...
- Patent number 10,535,769
- Issue date Jan 14, 2020
- Sony Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having curved gate electrode aligned with curv...
- Patent number 10,269,961
- Issue date Apr 23, 2019
- Sony Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having curved gate electrode aligned with curv...
- Patent number 9,947,790
- Issue date Apr 17, 2018
- Sony Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having curved gate electrode aligned with curv...
- Patent number 9,601,622
- Issue date Mar 21, 2017
- Sony Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having curved gate electrode aligned with curv...
- Patent number 9,337,305
- Issue date May 10, 2016
- Sony Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a stress-inducing layer between channel...
- Patent number 9,153,663
- Issue date Oct 6, 2015
- Sony Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including source/drain regions and a gate elec...
- Patent number 8,896,068
- Issue date Nov 25, 2014
- Sony Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 6,841,472
- Issue date Jan 11, 2005
- NEC Electronics Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a MOSFET
- Patent number 6,713,333
- Issue date Mar 30, 2004
- NEC Electronics Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device interconnection structure
- Patent number 6,316,836
- Issue date Nov 13, 2001
- NEC Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220384652
- Publication date Dec 1, 2022
- SONY GROUP CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210226056
- Publication date Jul 22, 2021
- SONY CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CURVED GATE ELECTRODE ALIGNED WITH CURV...
- Publication number 20200119194
- Publication date Apr 16, 2020
- SONY CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CURVED GATE ELECTRODE ALIGNED WITH CURV...
- Publication number 20190207029
- Publication date Jul 4, 2019
- SONY CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20190043988
- Publication date Feb 7, 2019
- SONY CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CURVED GATE ELECTRODE ALIGNED WITH CURV...
- Publication number 20180190820
- Publication date Jul 5, 2018
- SONY CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CURVED GATE ELECTRODE ALIGNED WITH CURV...
- Publication number 20170148915
- Publication date May 25, 2017
- SONY CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CURVED GATE ELECTRODE ALIGNED WITH CURV...
- Publication number 20160218213
- Publication date Jul 28, 2016
- SONY CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A STRESS-INTRODUCING LAYER BETWEEN CHAN...
- Publication number 20150340499
- Publication date Nov 26, 2015
- SONY CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20120199829
- Publication date Aug 9, 2012
- SONY CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20120032240
- Publication date Feb 9, 2012
- SONY CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20110042752
- Publication date Feb 24, 2011
- SONY CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20100314694
- Publication date Dec 16, 2010
- SONY CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor devices
- Publication number 20030219953
- Publication date Nov 27, 2003
- NEC Electronics Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20030216022
- Publication date Nov 20, 2003
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a MOSFET
- Publication number 20030082861
- Publication date May 1, 2003
- NEC Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20020079525
- Publication date Jun 27, 2002
- NEC Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS

Satoru Mayuzumi

Person

Patents Grantslast 30 patents

Semiconductor device including stress application layer

Semiconductor device and manufacturing method thereof

Semiconductor device having curved gate electrode aligned with curv...

Semiconductor device having curved gate electrode aligned with curv...

Semiconductor device having curved gate electrode aligned with curv...

Semiconductor device having curved gate electrode aligned with curv...

Semiconductor device having curved gate electrode aligned with curv...

Semiconductor device having curved gate electrode aligned with curv...

Semiconductor device having a stress-inducing layer between channel...

Semiconductor device including source/drain regions and a gate elec...

Semiconductor device and method of fabricating the same

Method for fabricating a MOSFET

Semiconductor device interconnection structure

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE HAVING CURVED GATE ELECTRODE ALIGNED WITH CURV...

SEMICONDUCTOR DEVICE HAVING CURVED GATE ELECTRODE ALIGNED WITH CURV...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE HAVING CURVED GATE ELECTRODE ALIGNED WITH CURV...

SEMICONDUCTOR DEVICE HAVING CURVED GATE ELECTRODE ALIGNED WITH CURV...

SEMICONDUCTOR DEVICE HAVING CURVED GATE ELECTRODE ALIGNED WITH CURV...

SEMICONDUCTOR DEVICE HAVING A STRESS-INTRODUCING LAYER BETWEEN CHAN...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Method for fabricating semiconductor devices

Semiconductor device and method of fabricating the same

Method for fabricating a MOSFET

Semiconductor device and method of fabricating the same