Satoru Mayuzumi

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating a metal high-k gate stack for a buried reces...
- Patent number 10,199,227
- Issue date Feb 5, 2019
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors having strained channel under gate in a recess
- Patent number 9,876,109
- Issue date Jan 23, 2018
- Micron Technology, Inc.
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a metal high-k gate stack for a buried reces...
- Patent number 9,680,007
- Issue date Jun 13, 2017
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors having strained channel under gate in a recess
- Patent number 9,640,656
- Issue date May 2, 2017
- Micron Technology, Inc.
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a metal high-k gate stack for a buried reces...
- Patent number 9,337,042
- Issue date May 10, 2016
- Sony Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a metal high-k gate stack for a buried reces...
- Patent number 8,980,713
- Issue date Mar 17, 2015
- Sony Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory system with bit line and method of manufacture...
- Patent number 8,779,546
- Issue date Jul 15, 2014
- Sony Corporation
- Masanori Tsukamoto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FABRICATING A METAL HIGH-K GATE STACK FOR A BURIED RECES...
- Publication number 20170263458
- Publication date Sep 14, 2017
- SONY CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistors
- Publication number 20170194494
- Publication date Jul 6, 2017
- Micron Technology, Inc.
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A METAL HIGH-K GATE STACK FOR A BURIED RECES...
- Publication number 20160204247
- Publication date Jul 14, 2016
- SONY CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistors
- Publication number 20150287825
- Publication date Oct 8, 2015
- Micron Technology, Inc.
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A METAL HIGH-K GATE STACK FOR A BURIED RECES...
- Publication number 20150187586
- Publication date Jul 2, 2015
- SONY CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A METAL HIGH-K GATE STACK FOR A BURIED RECES...
- Publication number 20140357033
- Publication date Dec 4, 2014
- SATORU MAYUZUMI
- H01 - BASIC ELECTRIC ELEMENTS

Satoru Mayuzumi

Person

Patents Grantslast 30 patents

Method for fabricating a metal high-k gate stack for a buried reces...

Transistors having strained channel under gate in a recess

Method for fabricating a metal high-k gate stack for a buried reces...

Transistors having strained channel under gate in a recess

Method for fabricating a metal high-k gate stack for a buried reces...

Method for fabricating a metal high-k gate stack for a buried reces...

Semiconductor memory system with bit line and method of manufacture...

Patents Applicationslast 30 patents

METHOD FOR FABRICATING A METAL HIGH-K GATE STACK FOR A BURIED RECES...

Transistors

METHOD FOR FABRICATING A METAL HIGH-K GATE STACK FOR A BURIED RECES...

Transistors

METHOD FOR FABRICATING A METAL HIGH-K GATE STACK FOR A BURIED RECES...

METHOD FOR FABRICATING A METAL HIGH-K GATE STACK FOR A BURIED RECES...