Satoru Nagao

Person

Ushiku, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 12,107,129
- Issue date Oct 1, 2024
- Mitsubishi Chemical Corporation
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 11,664,428
- Issue date May 30, 2023
- Mitsubishi Chemical Corporation
- Satoru Nagao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 11,038,024
- Issue date Jun 15, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Satoru Nagao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 11,031,475
- Issue date Jun 8, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Satoru Nagao
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN substrate, method for producing GaN substrate, method for produ...
- Patent number 10,655,244
- Issue date May 19, 2020
- Mitsubishi Chemical Corporation
- Yusuke Tsukada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Periodic table group 13 metal nitride crystals and method for manuf...
- Patent number 10,570,530
- Issue date Feb 25, 2020
- Mitsubishi Chemical Corporation
- Yuuki Enatsu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 10,475,887
- Issue date Nov 12, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN substrate, method for producing GaN substrate, method for produ...
- Patent number 10,066,319
- Issue date Sep 4, 2018
- Mitsubishi Chemical Corporation
- Yusuke Tsukada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Periodic table group 13 metal nitride crystals and method for manuf...
- Patent number 10,023,976
- Issue date Jul 17, 2018
- Mitsubishi Chemical Corporation
- Yuuki Enatsu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Periodic table group 13 metal nitride crystals and method for manuf...
- Patent number 9,840,791
- Issue date Dec 12, 2017
- MITSUBISHI CHEMICAL CORPORATION
- Yuuki Enatsu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride crystal production method and group III nitride c...
- Patent number 9,502,241
- Issue date Nov 22, 2016
- MITSUSBISHI CHEMICAL CORPORATION
- Hajime Matsumoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Light emitting device and light emitting device module
- Patent number 7,164,157
- Issue date Jan 16, 2007
- Mitsubishi Chemical Corporation
- Horie Hideyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting device and light emitting device module
- Patent number 7,102,174
- Issue date Sep 5, 2006
- Mitsubishi Chemical Corporation
- Horie Hideyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 6,744,066
- Issue date Jun 1, 2004
- Mitsubishi Chemical Corporation
- Kenji Shimoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device
- Patent number 6,639,926
- Issue date Oct 28, 2003
- Mitsubishi Chemical Corporation
- Kenji Shimoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 6,589,807
- Issue date Jul 8, 2003
- Mitsubishi Chemical Corporation
- Kenji Shimoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 6,265,733
- Issue date Jul 24, 2001
- Mitsubishi Chemical Corporation
- Kenji Shimoyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser diode
- Patent number 6,172,998
- Issue date Jan 9, 2001
- Mitsubishi Chemical Corporation
- Hideyoshi Horie
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor light-emitting device
- Patent number 6,023,483
- Issue date Feb 8, 2000
- Mitsubishi Chemical Corporation
- Kenji Shimoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a groove in a semiconductor laser diode and a sem...
- Patent number 5,920,767
- Issue date Jul 6, 1999
- Mitsubishi Chemical Company
- Hideyoshi Horie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a ridge or groove
- Patent number 5,838,028
- Issue date Nov 17, 1998
- Mitsubishi Chemical Corporation
- Hideyoshi Horie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser diode and process for producing the same
- Patent number 5,608,751
- Issue date Mar 4, 1997
- Mitsubishi Chemical Corporation
- Kenji Shimoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a groove in a semiconductor laser diode and a sem...
- Patent number 5,566,198
- Issue date Oct 15, 1996
- Mitsubishi Chemical Corporation
- Hideyoshi Horie
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20230253461
- Publication date Aug 10, 2023
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20210273058
- Publication date Sep 2, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20200013860
- Publication date Jan 9, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- C30 - CRYSTAL GROWTH
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20190312111
- Publication date Oct 10, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN SUBSTRATE, METHOD FOR PRODUCING GaN SUBSTRATE, METHOD FOR PRODU...
- Publication number 20180334758
- Publication date Nov 22, 2018
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke TSUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS AND METHOD FOR MANUF...
- Publication number 20180258552
- Publication date Sep 13, 2018
- MITSUBISHI CHEMICAL CORPORATION
- Yuuki ENATSU
- C30 - CRYSTAL GROWTH
Information Patent Application
PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS AND METHOD FOR MANUF...
- Publication number 20180057960
- Publication date Mar 1, 2018
- MITSUBISHI CHEMICAL CORPORATION
- Yuuki ENATSU
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN SUBSTRATE, METHOD FOR PRODUCING GaN SUBSTRATE, METHOD FOR PRODU...
- Publication number 20160319460
- Publication date Nov 3, 2016
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke TSUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20160233306
- Publication date Aug 11, 2016
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- C30 - CRYSTAL GROWTH
Information Patent Application
PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS AND METHOD FOR MANUF...
- Publication number 20150093318
- Publication date Apr 2, 2015
- MITSUBISHI CHEMICAL CORPORATION
- Yuuki ENATSU
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE CRYSTAL PRODUCTION METHOD AND GROUP III NITRIDE C...
- Publication number 20140035103
- Publication date Feb 6, 2014
- MITSUBISHI CHEMICAL CORPORATION
- Hajime MATSUMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
Light emitting device and light emitting device module
- Publication number 20060038185
- Publication date Feb 23, 2006
- MITSUBISHI CHEMICAL CORPORATION
- Hideyoshi Horie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor light-emitting device
- Publication number 20040041162
- Publication date Mar 4, 2004
- MITSUBISHI CHEMICAL CORPORATION
- Kenji Shimoyama
- B82 - NANO-TECHNOLOGY
Information Patent Application
Light emitting device and light emitting device module
- Publication number 20020014674
- Publication date Feb 7, 2002
- Horie Hideyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20020014622
- Publication date Feb 7, 2002
- MITSUBISHI CHEMICAL CORPORATION
- Kenji Shimoyama
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20010040236
- Publication date Nov 15, 2001
- MITSUBISHI CHEMICAL CORPORATION
- Kenji Shimoyama
- B82 - NANO-TECHNOLOGY

Satoru Nagao

Person

Patents Grantslast 30 patents

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

GaN substrate, method for producing GaN substrate, method for produ...

Periodic table group 13 metal nitride crystals and method for manuf...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

GaN substrate, method for producing GaN substrate, method for produ...

Periodic table group 13 metal nitride crystals and method for manuf...

Periodic table group 13 metal nitride crystals and method for manuf...

Group III nitride crystal production method and group III nitride c...

Light emitting device and light emitting device module

Light emitting device and light emitting device module

Semiconductor device and method for manufacturing the same

Semiconductor light-emitting device

Semiconductor device and method for manufacturing the same

Semiconductor device and method for manufacturing the same

Semiconductor laser diode

Semiconductor light-emitting device

Method of forming a groove in a semiconductor laser diode and a sem...

Semiconductor device having a ridge or groove

Laser diode and process for producing the same

Method of forming a groove in a semiconductor laser diode and a sem...

Patents Applicationslast 30 patents

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

GaN SUBSTRATE, METHOD FOR PRODUCING GaN SUBSTRATE, METHOD FOR PRODU...

PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS AND METHOD FOR MANUF...

PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS AND METHOD FOR MANUF...

GaN SUBSTRATE, METHOD FOR PRODUCING GaN SUBSTRATE, METHOD FOR PRODU...

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS AND METHOD FOR MANUF...

GROUP III NITRIDE CRYSTAL PRODUCTION METHOD AND GROUP III NITRIDE C...

Light emitting device and light emitting device module

Semiconductor light-emitting device

Light emitting device and light emitting device module

Semiconductor device and method for manufacturing the same

Semiconductor device and method for manufacturing the same