Satoshi Ae

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Kanagawa, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing semiconductor device and semiconductor device
- Patent number 10,020,637
- Issue date Jul 10, 2018
- Renesas Electronics Corporation
- Satoshi Ae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device and semiconductor device
- Patent number 9,698,569
- Issue date Jul 4, 2017
- Renesas Electronics Corporation
- Satoshi Ae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried semiconductor laser and method for manufacturing the same
- Patent number 7,782,919
- Issue date Aug 24, 2010
- NEC Electronics Corporation
- Satoshi Ae
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20170271848
- Publication date Sep 21, 2017
- RENESAS ELECTRONICS CORPORATION
- Satoshi AE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20150085888
- Publication date Mar 26, 2015
- Renesas Electronics Corporation
- Satoshi AE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buried semiconductor laser and method for manufacturing the same
- Publication number 20080137702
- Publication date Jun 12, 2008
- NEC ELECTRONICS CORPORATION
- Satoshi Ae
- B82 - NANO-TECHNOLOGY