Satoshi Agawa

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Omiya, JP

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Patents Grantslast 30 patents

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Method of making cBN semiconductor device having an ohmic electrode
- Patent number 5,444,017
- Issue date Aug 22, 1995
- National Institute for Research in Inorganic Materials
- Koh Era
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
cBN semiconductor device having an ohmic electrode and a method of...
- Patent number 5,414,279
- Issue date May 9, 1995
- National Institute for Research in Inorganic Materials
- Koh Era
- H01 - BASIC ELECTRIC ELEMENTS