Satoshi Inaba

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Peekskill, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,125,779
- Issue date Oct 24, 2006
- Kabushiki Kaisha Toshiba
- Satoshi Inaba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,878,599
- Issue date Apr 12, 2005
- Kabushiki Kaisha Toshiba
- Satoshi Inaba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,828,203
- Issue date Dec 7, 2004
- Kabushiki Kaisha Toshiba
- Satoshi Inaba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,329,258
- Issue date Dec 11, 2001
- Kabushiki Kaisha Toshiba
- Satoshi Inaba
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20050009256
- Publication date Jan 13, 2005
- KABUSHIKI KAISHA TOSHIBA
- Satoshi Inaba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20050009284
- Publication date Jan 13, 2005
- KABUSHIKI KAISHA TOSHIBA
- Satoshi Inaba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reducing threshold voltage roll-up/roll-off effect for MOSFETS
- Publication number 20020177264
- Publication date Nov 28, 2002
- International Business Machines Corporation
- Hiroyuki Akatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20020024107
- Publication date Feb 28, 2002
- Kabushiki Kaisha Toshiba
- Satoshi Inaba
- H01 - BASIC ELECTRIC ELEMENTS