Satoshi Kamiyama

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of producing the same
- Patent number 6,607,979
- Issue date Aug 19, 2003
- NEC Corporation
- Satoshi Kamiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 5,622,888
- Issue date Apr 22, 1997
- NEC Corporation
- Makoto Sekine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming capacitor element of DRAM
- Patent number 5,508,221
- Issue date Apr 16, 1996
- NEC Corporation
- Satoshi Kamiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing semiconductor device
- Patent number 5,486,488
- Issue date Jan 23, 1996
- NEC Corporation
- Satoshi Kamiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating capacitor element in super-LSI
- Patent number 5,438,012
- Issue date Aug 1, 1995
- NEC Corporation
- Satoshi Kamiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 5,352,623
- Issue date Oct 4, 1994
- NEC Corporation
- Satoshi Kamiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabrication thereof
- Patent number 5,279,985
- Issue date Jan 18, 1994
- NEC Corporation
- Satoshi Kamiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming capacitive insulating film
- Patent number 5,254,505
- Issue date Oct 19, 1993
- NEC Corporation
- Satoshi Kamiyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for fabricating a semiconductor device
- Patent number 5,202,280
- Issue date Apr 13, 1993
- NEC Corporation
- Satoshi Kamiyama
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device and method of producing the same
- Publication number 20030197232
- Publication date Oct 23, 2003
- NEC Corporation
- Satoshi Kamiyama
- H01 - BASIC ELECTRIC ELEMENTS

Satoshi Kamiyama

Person

Patents Grantslast 30 patents

Semiconductor device and method of producing the same

Method of manufacturing a semiconductor device

Method for forming capacitor element of DRAM

Process for manufacturing semiconductor device

Method of fabricating capacitor element in super-LSI

Method for manufacturing a semiconductor device

Semiconductor device and method of fabrication thereof

Process of forming capacitive insulating film

Method for fabricating a semiconductor device

Patents Applicationslast 30 patents

Semiconductor device and method of producing the same