Satoshi NAKAZAWA

Person

Osaka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Circuit for switching device, switching system, and processing meth...
- Patent number 12,143,098
- Issue date Nov 12, 2024
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Yusuke Kinoshita
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Switch system
- Patent number 11,736,104
- Issue date Aug 22, 2023
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Yusuke Kinoshita
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device
- Patent number 11,342,428
- Issue date May 24, 2022
- Panasonic Holdings Corporation
- Hong-An Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 10,128,363
- Issue date Nov 13, 2018
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Satoshi Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,666,664
- Issue date May 30, 2017
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Ryo Kajitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 8,890,210
- Issue date Nov 18, 2014
- Panasonic Corporation
- Satoshi Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having reduced contact resistance and metho...
- Patent number 8,039,329
- Issue date Oct 18, 2011
- Panasonic Corporation
- Satoshi Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride based semiconductor device with concave gate region
- Patent number 7,838,904
- Issue date Nov 23, 2010
- Panasonic Corporation
- Kazushi Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having nitride semiconductor layer
- Patent number 7,714,359
- Issue date May 11, 2010
- Panasonic Corporation
- Satoshi Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having reduced contact resistance and metho...
- Patent number 7,705,371
- Issue date Apr 27, 2010
- Panasonic Corporation
- Satoshi Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 7,465,968
- Issue date Dec 16, 2008
- Panasonic Corporation
- Tetsuzo Ueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 7,425,732
- Issue date Sep 16, 2008
- Matsushita Electric Industrial Co., Ltd.
- Tetsuzo Ueda
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Semiconductor device and hetero-junction bipolar transistor
- Patent number 7,230,285
- Issue date Jun 12, 2007
- Matsushita Electric Industrial Co., Ltd.
- Satoshi Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device using an SOI substrate and having a trench iso...
- Patent number 6,867,462
- Issue date Mar 15, 2005
- Matsushita Electric Industrial Co., Ltd.
- Satoshi Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ON-STATE VOLTAGE MEASUREMENT CIRCUIT
- Publication number 20240313759
- Publication date Sep 19, 2024
- Panasonic Intellectual Property Management Co., Ltd.
- Ryosuke MAEDA
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SWITCH SYSTEM
- Publication number 20240259018
- Publication date Aug 1, 2024
- Panasonic Intellectual Property Management Co., Ltd.
- Yusuke KINOSHITA
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
CIRCUIT FOR SWITCHING DEVICE, SWITCHING SYSTEM, AND PROCESSING METH...
- Publication number 20230336171
- Publication date Oct 19, 2023
- Panasonic Intellectual Property Management Co., Ltd.
- YUSUKE KINOSHITA
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
CONTROL SYSTEM AND CONTROL METHOD FOR DUAL-GATE BIDIRECTIONAL SWITCH
- Publication number 20230231018
- Publication date Jul 20, 2023
- Panasonic Intellectual Property Management Co., Ltd.
- YUSUKE KINOSHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCH SYSTEM
- Publication number 20220337239
- Publication date Oct 20, 2022
- Yusuke KINOSHITA
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200135876
- Publication date Apr 30, 2020
- PANASONIC CORPORATION
- Hong-An Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20150311329
- Publication date Oct 29, 2015
- Panasonic Intellectual Property Management Co., Ltd.
- SATOSHI NAKAZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20150194483
- Publication date Jul 9, 2015
- Panasonic Intellectual Property Management Co., Ltd.
- RYO KAJITANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SAME
- Publication number 20130146946
- Publication date Jun 13, 2013
- PANASONIC CORPORATION
- Naohiro TSURUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20130069115
- Publication date Mar 21, 2013
- PANASONIC CORPORATION
- Satoshi NAKAZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20110175142
- Publication date Jul 21, 2011
- PANASONIC CORPORATION
- Naohiro Tsurumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE WITH CONCAVE GATE REGION
- Publication number 20110024797
- Publication date Feb 3, 2011
- PANASONIC CORPORATION
- Kazushi NAKAZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR HAVING REDUCED COTNACT RESISTANCE AND METHO...
- Publication number 20100167478
- Publication date Jul 1, 2010
- PANASONIC CORPORATION
- Satoshi NAKAZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20080179694
- Publication date Jul 31, 2008
- Kazushi NAKAZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor and method for fabricating the same
- Publication number 20070278507
- Publication date Dec 6, 2007
- Satoshi Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and hetero-junction bipolar transistor
- Publication number 20070232008
- Publication date Oct 4, 2007
- Matsushita Electric Industrial Co., Ltd.
- Satoshi Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20070117355
- Publication date May 24, 2007
- Tetsuzo Ueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride semiconductor device
- Publication number 20060244003
- Publication date Nov 2, 2006
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Tetsuzo Ueda
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Nitride semiconductor light emitting device and fabrication method...
- Publication number 20060203871
- Publication date Sep 14, 2006
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Tetsuzo Ueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor and method for fabricating the same
- Publication number 20060180831
- Publication date Aug 17, 2006
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Satoshi Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and hetero-junction bipolar transistor
- Publication number 20050121696
- Publication date Jun 9, 2005
- Satoshi Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20040026746
- Publication date Feb 12, 2004
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Satoshi Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS

Satoshi NAKAZAWA

Person

Patents Grantslast 30 patents

Circuit for switching device, switching system, and processing meth...

Switch system

Semiconductor device

Field effect transistor

Semiconductor device

Field effect transistor

Field effect transistor having reduced contact resistance and metho...

Nitride based semiconductor device with concave gate region

Field effect transistor having nitride semiconductor layer

Field effect transistor having reduced contact resistance and metho...

Semiconductor device and method for fabricating the same

Nitride semiconductor device

Semiconductor device and hetero-junction bipolar transistor

Semiconductor device using an SOI substrate and having a trench iso...

Patents Applicationslast 30 patents

ON-STATE VOLTAGE MEASUREMENT CIRCUIT

SWITCH SYSTEM

CIRCUIT FOR SWITCHING DEVICE, SWITCHING SYSTEM, AND PROCESSING METH...

CONTROL SYSTEM AND CONTROL METHOD FOR DUAL-GATE BIDIRECTIONAL SWITCH

SWITCH SYSTEM

SEMICONDUCTOR DEVICE

FIELD EFFECT TRANSISTOR

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SAME

FIELD EFFECT TRANSISTOR

NITRIDE SEMICONDUCTOR DEVICE

NITRIDE-BASED SEMICONDUCTOR DEVICE WITH CONCAVE GATE REGION

FIELD EFFECT TRANSISTOR HAVING REDUCED COTNACT RESISTANCE AND METHO...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Field effect transistor and method for fabricating the same

Semiconductor device and hetero-junction bipolar transistor

Semiconductor device and method for fabricating the same

Nitride semiconductor device

Nitride semiconductor light emitting device and fabrication method...

Field effect transistor and method for fabricating the same

Semiconductor device and hetero-junction bipolar transistor

Semiconductor device and method for fabricating the same