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Satoshi Obara
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Funabashi-shi, JP
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last 30 patents
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Patent Grant
Method of manufacturing single crystal 3C-SiC substrate and single...
Patent number
8,986,448
Issue date
Mar 24, 2015
Air Water Inc.
Hidetoshi Asamura
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
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last 30 patents
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METHOD OF MANUFACTURING SINGLE CRYSTAL 3C-SIC SUBSTRATE AND SINGLE...
Publication number
20130040103
Publication date
Feb 14, 2013
Hidetoshi Asamura
C30 - CRYSTAL GROWTH