Satoshi Oka

Person

Annaka-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon epitaxial wafer, method for manufacturing the same, bonded...
- Patent number 8,823,130
- Issue date Sep 2, 2014
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing SOI wafer
- Patent number 8,728,912
- Issue date May 20, 2014
- Shin-Etsu Handotai Co., Ltd.
- Hiroji Aga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing bonded wafer
- Patent number 8,691,665
- Issue date Apr 8, 2014
- Shin-Etsu Handotai Co., Ltd.
- Satoshi Oka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing SOI wafer and SOI wafer
- Patent number 8,497,187
- Issue date Jul 30, 2013
- Shin-Etsu Handotai Co., Ltd.
- Satoshi Oka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing bonded wafer
- Patent number 8,389,382
- Issue date Mar 5, 2013
- Shin-Etsu Handotai Co., Ltd.
- Satoshi Oka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing semiconductor substrate
- Patent number 8,076,223
- Issue date Dec 13, 2011
- Shin-Etsu Handotai Co., Ltd.
- Satoshi Oka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing SOI substrate
- Patent number 7,838,388
- Issue date Nov 23, 2010
- Shin-Etsu Handotai Co., Ltd.
- Satoshi Oka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of semiconductor wafer
- Patent number 7,029,977
- Issue date Apr 18, 2006
- Fuji Electric Holdings Co., Ltd.
- Daisuke Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming silicon epitaxial layer
- Patent number 7,008,881
- Issue date Mar 7, 2006
- Tokyo Electron Limited
- Akitake Tamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for heat treatment of silicon wafer and silicon wafer heat-t...
- Patent number 6,531,416
- Issue date Mar 11, 2003
- Shin-Etsu Handotai Co., Ltd.
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heat treatment method for a silicon wafer and a silicon wafer heat-...
- Patent number 6,403,502
- Issue date Jun 11, 2002
- Shin-Etsu Handotai Co., Ltd.
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a silicon single crystal wafer and a silicon s...
- Patent number 6,139,625
- Issue date Oct 31, 2000
- Shin-Etsu Handotai Co., Ltd.
- Masaro Tamatsuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Heat treatment jig for semiconductor wafers and a method for treati...
- Patent number 5,759,426
- Issue date Jun 2, 1998
- Shin-Etsu Handotai Co., Ltd.
- Norihiro Kobayashi
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING SOI WAFER
- Publication number 20130316522
- Publication date Nov 28, 2013
- Shin-Etsu Handotai Co., Ltd.
- Hiroji Aga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING BONDED WAFER
- Publication number 20130102126
- Publication date Apr 25, 2013
- Shin-Etsu Handotai Co., Ltd.
- Hiroji Aga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON EPITAXIAL WAFER, METHOD FOR MANUFACTURING THE SAME, BONDED...
- Publication number 20120326268
- Publication date Dec 27, 2012
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING BONDED WAFER
- Publication number 20120244679
- Publication date Sep 27, 2012
- Shin-Etsu Handotai Co., Ltd.
- Satoshi Oka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING BONDED WAFER
- Publication number 20110237049
- Publication date Sep 29, 2011
- Shin-Etsu Handotai Co., Ltd.
- Satoshi Oka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SOI WAFER AND SOI WAFER
- Publication number 20110117727
- Publication date May 19, 2011
- Shin-Etsu Handotai Co., Ltd.
- Satoshi Oka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF STRAINED SI SUBSTRATE
- Publication number 20100003803
- Publication date Jan 7, 2010
- Shin-Etsu Handotai Co., Ltd.
- Satoshi Oka
- C30 - CRYSTAL GROWTH
Information Patent Application
Method For Producing Semiconductor Substrate
- Publication number 20090305485
- Publication date Dec 10, 2009
- Shin-Etsu Handotai Co., Ltd.
- Satoshi Oka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing SOl substrate
- Publication number 20090258474
- Publication date Oct 15, 2009
- Shin-Etsu Handotai Co., Ltd.
- Satoshi Oka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication method of semiconductor wafer
- Publication number 20040185665
- Publication date Sep 23, 2004
- FUJI ELECTRIC HOLDINGS CO., LTD.
- Daisuke Kishimoto
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for forming silicon epitaxial layer
- Publication number 20040175959
- Publication date Sep 9, 2004
- Akitake Tamura
- C30 - CRYSTAL GROWTH

Satoshi Oka

Person

Patents Grantslast 30 patents

Silicon epitaxial wafer, method for manufacturing the same, bonded...

Method for manufacturing SOI wafer

Method for producing bonded wafer

Method for manufacturing SOI wafer and SOI wafer

Method for manufacturing bonded wafer

Method for producing semiconductor substrate

Method for producing SOI substrate

Fabrication method of semiconductor wafer

Method for forming silicon epitaxial layer

Method for heat treatment of silicon wafer and silicon wafer heat-t...

Heat treatment method for a silicon wafer and a silicon wafer heat-...

Method for producing a silicon single crystal wafer and a silicon s...

Heat treatment jig for semiconductor wafers and a method for treati...

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING SOI WAFER

METHOD FOR MANUFACTURING BONDED WAFER

SILICON EPITAXIAL WAFER, METHOD FOR MANUFACTURING THE SAME, BONDED...

METHOD FOR PRODUCING BONDED WAFER

METHOD FOR MANUFACTURING BONDED WAFER

METHOD FOR MANUFACTURING SOI WAFER AND SOI WAFER

MANUFACTURING METHOD OF STRAINED SI SUBSTRATE

Method For Producing Semiconductor Substrate

Method for producing SOl substrate

Fabrication method of semiconductor wafer

Method for forming silicon epitaxial layer