Saumitra Raj Mehrotra

Person

Scottsdale, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor devices with termination regions
- Patent number 12,057,499
- Issue date Aug 6, 2024
- NXP USA, INC.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally-diffused metal-oxide semiconductor transistor and method...
- Patent number 11,961,907
- Issue date Apr 16, 2024
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally-diffused metal-oxide semiconductor transistor and method...
- Patent number 11,777,002
- Issue date Oct 3, 2023
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried Zener design
- Patent number 11,640,997
- Issue date May 2, 2023
- NXP B.V.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally-diffused metal-oxide semiconductor transistor and method...
- Patent number 11,515,416
- Issue date Nov 29, 2022
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor formed with spacer
- Patent number 11,387,348
- Issue date Jul 12, 2022
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with extended drain region
- Patent number 11,329,156
- Issue date May 10, 2022
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with extended drain region
- Patent number 11,282,956
- Issue date Mar 22, 2022
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally-diffused metal-oxide semiconductor transistor and method...
- Patent number 11,227,921
- Issue date Jan 18, 2022
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench with different transverse cross-sectional widths
- Patent number 11,217,675
- Issue date Jan 4, 2022
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor trench with field plate structure
- Patent number 11,075,110
- Issue date Jul 27, 2021
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor devices with extended drain regions located in trench si...
- Patent number 10,833,174
- Issue date Nov 10, 2020
- NXP USA, INC.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with gate/field plate structure
- Patent number 10,749,028
- Issue date Aug 18, 2020
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor with extended drain region
- Patent number 10,749,023
- Issue date Aug 18, 2020
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with drain active area
- Patent number 10,672,903
- Issue date Jun 2, 2020
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Die with buried doped isolation region
- Patent number 10,607,880
- Issue date Mar 31, 2020
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method therefor
- Patent number 10,600,911
- Issue date Mar 24, 2020
- NXP USA, INC.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor trench structure with field plate structures
- Patent number 10,600,879
- Issue date Mar 24, 2020
- NXP USA, INC.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method therefor
- Patent number 10,522,677
- Issue date Dec 31, 2019
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method therefor
- Patent number 10,424,646
- Issue date Sep 24, 2019
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal oxide semiconducting devices with lightly-...
- Patent number 10,418,483
- Issue date Sep 17, 2019
- NXP B.V.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
OPTIMAL HIGH VOLTAGE TUB DESIGN WITH FLOATING POLY TRENCHES
- Publication number 20250046651
- Publication date Feb 6, 2025
- NXP B.V.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH IMPROVED MECHANICAL STRESS RESISTANCE
- Publication number 20240204113
- Publication date Jun 20, 2024
- NXP B.V.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR AN ACTIVE COMPONENT
- Publication number 20240128316
- Publication date Apr 18, 2024
- NXP B.V.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY-DIFFUSED METAL-OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD...
- Publication number 20230053824
- Publication date Feb 23, 2023
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MAKING A SEMICONDUCTOR DEVICE
- Publication number 20220344506
- Publication date Oct 27, 2022
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buried Zener Design
- Publication number 20220285564
- Publication date Sep 8, 2022
- NXP B.V.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY-DIFFUSED METAL-OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD...
- Publication number 20220093752
- Publication date Mar 24, 2022
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY-DIFFUSED METAL-OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD...
- Publication number 20220093793
- Publication date Mar 24, 2022
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH WITH DIFFERENT TRANSVERSE CROSS-SECTIONAL WIDTHS
- Publication number 20210305385
- Publication date Sep 30, 2021
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH EXTENDED DRAIN REGION
- Publication number 20210184034
- Publication date Jun 17, 2021
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR FORMED WITH SPACER
- Publication number 20210159323
- Publication date May 27, 2021
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY-DIFFUSED METAL-OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD...
- Publication number 20210159319
- Publication date May 27, 2021
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES WITH TERMINATION REGIONS
- Publication number 20210126125
- Publication date Apr 29, 2021
- NXP USA, Inc.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSITOR WITH GATE/FIELD PLATE STRUCTURE
- Publication number 20200176599
- Publication date Jun 4, 2020
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES WITH EXTENDED DRAIN REGIONS LOCATED IN TRENCH SI...
- Publication number 20200135896
- Publication date Apr 30, 2020
- NXP USA, Inc.
- BERNHARD GROTE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR WITH EXTENDED DRAIN REGION
- Publication number 20200135916
- Publication date Apr 30, 2020
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES WITH CONTROL-TERMINAL FIELD PLATE STRUCTURES IN...
- Publication number 20200098912
- Publication date Mar 26, 2020
- NXP USA, Inc.
- BERNHARD GROTE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIE WITH BURIED DOPED ISOLATION REGION
- Publication number 20200075393
- Publication date Mar 5, 2020
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DRAIN ACTIVE AREA
- Publication number 20200035827
- Publication date Jan 30, 2020
- NXP USA, Inc.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR TRENCH STRUCTURE WITH FIELD PLATE STRUCTURES
- Publication number 20190280094
- Publication date Sep 12, 2019
- NXP USA, Inc.
- BERNHARD GROTE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR AND METHOD THEREFOR
- Publication number 20190097045
- Publication date Mar 28, 2019
- NXP USA, Inc.
- BERNHARD GROTE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR AND METHOD THEREFOR
- Publication number 20190097003
- Publication date Mar 28, 2019
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR AND METHOD THEREFOR
- Publication number 20190097046
- Publication date Mar 28, 2019
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTING DEVICES WITH LIGHTLY-...
- Publication number 20180151723
- Publication date May 31, 2018
- NXP B.V.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS

Saumitra Raj Mehrotra

Person

Patents Grantslast 30 patents

Transistor devices with termination regions

Laterally-diffused metal-oxide semiconductor transistor and method...

Laterally-diffused metal-oxide semiconductor transistor and method...

Buried Zener design

Laterally-diffused metal-oxide semiconductor transistor and method...

Transistor formed with spacer

Transistor with extended drain region

Transistor with extended drain region

Laterally-diffused metal-oxide semiconductor transistor and method...

Trench with different transverse cross-sectional widths

Transistor trench with field plate structure

Transistor devices with extended drain regions located in trench si...

Transistor with gate/field plate structure

Vertical transistor with extended drain region

Semiconductor device with drain active area

Die with buried doped isolation region

Field-effect transistor and method therefor

Transistor trench structure with field plate structures

Field-effect transistor and method therefor

Field-effect transistor and method therefor

Laterally diffused metal oxide semiconducting devices with lightly-...

Patents Applicationslast 30 patents

OPTIMAL HIGH VOLTAGE TUB DESIGN WITH FLOATING POLY TRENCHES

SEMICONDUCTOR DEVICE WITH IMPROVED MECHANICAL STRESS RESISTANCE

ISOLATION STRUCTURE FOR AN ACTIVE COMPONENT

LATERALLY-DIFFUSED METAL-OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD...

SEMICONDUCTOR DEVICE AND METHOD OF MAKING A SEMICONDUCTOR DEVICE

Buried Zener Design

LATERALLY-DIFFUSED METAL-OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD...

LATERALLY-DIFFUSED METAL-OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD...

TRENCH WITH DIFFERENT TRANSVERSE CROSS-SECTIONAL WIDTHS

TRANSISTOR WITH EXTENDED DRAIN REGION

TRANSISTOR FORMED WITH SPACER

LATERALLY-DIFFUSED METAL-OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD...

TRANSISTOR DEVICES WITH TERMINATION REGIONS

TRANSITOR WITH GATE/FIELD PLATE STRUCTURE

TRANSISTOR DEVICES WITH EXTENDED DRAIN REGIONS LOCATED IN TRENCH SI...

VERTICAL TRANSISTOR WITH EXTENDED DRAIN REGION

TRANSISTOR DEVICES WITH CONTROL-TERMINAL FIELD PLATE STRUCTURES IN...

DIE WITH BURIED DOPED ISOLATION REGION

SEMICONDUCTOR DEVICE WITH DRAIN ACTIVE AREA

TRANSISTOR TRENCH STRUCTURE WITH FIELD PLATE STRUCTURES

FIELD-EFFECT TRANSISTOR AND METHOD THEREFOR

FIELD-EFFECT TRANSISTOR AND METHOD THEREFOR

FIELD-EFFECT TRANSISTOR AND METHOD THEREFOR

LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTING DEVICES WITH LIGHTLY-...