Scott Luning

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Simplified multi-threshold voltage scheme for fully depleted SOI MO...
- Patent number 10,262,905
- Issue date Apr 16, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully depleted silicon-on-insulator (FDSOI) transistor device and s...
- Patent number 10,186,524
- Issue date Jan 22, 2019
- GLOBALFOUNDRIES Inc.
- David Pritchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simplified gate to source/drain region connections
- Patent number 10,181,522
- Issue date Jan 15, 2019
- GLOBALFOUNDRIES Inc.
- Tuhin Guha Neogi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method, apparatus, and system for using a cover mask for enabling m...
- Patent number 10,068,806
- Issue date Sep 4, 2018
- GLOBALFOUNDRIES Inc.
- David C. Pritchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method, apparatus, and system for using a cover mask for enabling m...
- Patent number 9,947,590
- Issue date Apr 17, 2018
- GLOBALFOUNDRIES Inc.
- David C. Pritchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully depleted silicon-on-insulator (FDSOI) transistor device and s...
- Patent number 9,941,301
- Issue date Apr 10, 2018
- GLOBALFOUNDRIES Inc.
- David Pritchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pass-through contact using silicide
- Patent number 9,666,488
- Issue date May 30, 2017
- GLOBALFOUNDRIES Inc.
- Tuhin Guha Neogi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simplified multi-threshold voltage scheme for fully depleted SOI MO...
- Patent number 9,633,911
- Issue date Apr 25, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS circuit having a tensile stress layer overlying an NMOS transi...
- Patent number 9,373,548
- Issue date Jun 21, 2016
- Advanced Micro Devices, Inc.
- Gen Pei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simplified multi-threshold voltage scheme for fully depleted SOI MO...
- Patent number 9,219,078
- Issue date Dec 22, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM cell with individual electrical device threshold control
- Patent number 9,048,136
- Issue date Jun 2, 2015
- GLOBALFOUNDRIES, INC.
- Randy W. Mann
- G11 - INFORMATION STORAGE
Information Patent Grant
SRAM cell with individual electrical device threshold control
- Patent number 9,029,956
- Issue date May 12, 2015
- Global Foundries, Inc.
- Randy W. Mann
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device with stressed fin sections
- Patent number 8,912,603
- Issue date Dec 16, 2014
- GLOBALFOUNDRIES, INC.
- Scott Luning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating FinFET semiconductor devices using L-shaped...
- Patent number 8,404,592
- Issue date Mar 26, 2013
- GLOBALFOUNDRIES, INC.
- Scott Luning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with asymmetrical extension implant
- Patent number 8,193,592
- Issue date Jun 5, 2012
- Advanced Micro Devices, Inc.
- Frank Bin Yang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Stressed field effect transistor and methods for its fabrication
- Patent number 8,148,214
- Issue date Apr 3, 2012
- GLOBALFOUNDRIES Inc.
- Andrew M. Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded silicon germanium source drain structure with reduced sili...
- Patent number 8,120,120
- Issue date Feb 21, 2012
- GLOBALFOUNDRIES Inc.
- Frank (Bin) Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating non-planar semiconductor devices having str...
- Patent number 8,039,349
- Issue date Oct 18, 2011
- GLOBALFOUNDRIES Inc.
- Michael J. Hargrove
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with stressed fin sections, and related fabric...
- Patent number 8,030,144
- Issue date Oct 4, 2011
- GLOBALFOUNDRIES Inc.
- Scott Luning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structures with stress-inducing source/drain-forming spacers...
- Patent number 7,977,174
- Issue date Jul 12, 2011
- GLOBALFOUNDRIES Inc.
- Scott Luning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor transistor with reduced gate height, and...
- Patent number 7,960,229
- Issue date Jun 14, 2011
- GLOBALFOUNDRIES Inc.
- Frank Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing a semiconductor de...
- Patent number 7,910,996
- Issue date Mar 22, 2011
- GlobalFoundries Inc.
- Paul R. Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacking fault reduction in epitaxially grown silicon
- Patent number 7,893,493
- Issue date Feb 22, 2011
- International Business Machines Corproation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with asymmetrical extension implant
- Patent number 7,829,401
- Issue date Nov 9, 2010
- Advanced Micro Devices, Inc.
- Frank Bin Yang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Stacking fault reduction in epitaxially grown silicon
- Patent number 7,674,720
- Issue date Mar 9, 2010
- International Business Machines Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing a semiconductor de...
- Patent number 7,572,705
- Issue date Aug 11, 2009
- Advanced Micro Devices, Inc.
- Paul R. Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration scheme for constrained SEG growth on poly during raised...
- Patent number 7,553,732
- Issue date Jun 30, 2009
- Advanced Micro Devices, Inc.
- David E. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating a stress enhanced semiconductor device havi...
- Patent number 7,521,380
- Issue date Apr 21, 2009
- Advanced Micro Devices, Inc.
- Andrew M. Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stressed field effect transistor and methods for its fabrication
- Patent number 7,504,301
- Issue date Mar 17, 2009
- Advanced Micro Devices, Inc.
- Andrew M. Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress enhanced CMOS circuits and methods for their fabrication
- Patent number 7,442,601
- Issue date Oct 28, 2008
- Advanced Micro Devices, Inc.
- Gen Pei
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SIMPLIFIED GATE TO SOURCE/DRAIN REGION CONNECTIONS
- Publication number 20180240885
- Publication date Aug 23, 2018
- GLOBALFOUNDRIES INC.
- Tuhin Guha Neogi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY DEPLETED SILICON-ON-INSULATOR (FDSOI) TRANSISTOR DEVICE AND S...
- Publication number 20180197882
- Publication date Jul 12, 2018
- GLOBALFOUNDRIES Inc.
- David PRITCHARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, APPARATUS, AND SYSTEM FOR USING A COVER MASK FOR ENABLING M...
- Publication number 20180182674
- Publication date Jun 28, 2018
- GLOBALFOUNDRIES INC.
- David C. Pritchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, APPARATUS, AND SYSTEM FOR USING A COVER MASK FOR ENABLING M...
- Publication number 20180108571
- Publication date Apr 19, 2018
- GLOBALFOUNDRIES INC.
- David C. Pritchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIMPLIFIED MULTI-THRESHOLD VOLTAGE SCHEME FOR FULLY DEPLETED SOI MO...
- Publication number 20160020154
- Publication date Jan 21, 2016
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIMPLIFIED MULTI-THRESHOLD VOLTAGE SCHEME FOR FULLY DEPLETED SOI MO...
- Publication number 20150200205
- Publication date Jul 16, 2015
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIMPLIFIED MULTI-THRESHOLD VOLTAGE SCHEME FOR FULLY DEPLETED SOI MO...
- Publication number 20140312423
- Publication date Oct 23, 2014
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM CELL WITH INDIVIDUAL ELECTRICAL DEVICE THRESHOLD CONTROL
- Publication number 20130107608
- Publication date May 2, 2013
- GLOBALFOUNDRIES INC.
- Randy W. Mann
- G11 - INFORMATION STORAGE
Information Patent Application
SRAM CELL WITH INDIVIDUAL ELECTRICAL DEVICE THRESHOLD CONTROL
- Publication number 20130107610
- Publication date May 2, 2013
- GLOBALFOUNDRIES INC.
- Randy W. Mann
- G11 - INFORMATION STORAGE
Information Patent Application
STRAINED MOS DEVICE AND METHODS FOR ITS FABRICATION
- Publication number 20120171820
- Publication date Jul 5, 2012
- GLOBALFOUNDRIES INC.
- Andrew Michael WAITE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH STRESSED FIN SECTIONS
- Publication number 20110266622
- Publication date Nov 3, 2011
- GLOBALFOUNDRIES INC.
- Scott LUNING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR TRANSISTOR WITH REDUCED GATE HEIGHT, AND...
- Publication number 20110204446
- Publication date Aug 25, 2011
- GLOBALFOUNDRIES INC.
- Frank Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH STRESSED FIN SECTIONS, AND RELATED FABRIC...
- Publication number 20110084336
- Publication date Apr 14, 2011
- GLOBALFOUNDRIES INC.
- Scott LUNING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED SILICON GERMANIUM SOURCE DRAIN STRUCTURE WITH REDUCED SIL...
- Publication number 20110062498
- Publication date Mar 17, 2011
- Frank (Bin) Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING NON-PLANAR SEMICONDUCTOR DEVICES HAVING STR...
- Publication number 20110027978
- Publication date Feb 3, 2011
- GLOBALFOUNDRIES INC.
- Michael J. HARGROVE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH ASYMMETRICAL EXTENSION IMPLANT
- Publication number 20110024841
- Publication date Feb 3, 2011
- Advanced Micro Devices, Inc.
- Frank Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING FINFET SEMICONDUCTOR DEVICES USING L-SHAPED...
- Publication number 20110021026
- Publication date Jan 27, 2011
- GLOBALFOUNDRIES INC.
- Scott LUNING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURES WITH FINS HAVING STRESS-INDUCING CAPS AND METHODS...
- Publication number 20100308409
- Publication date Dec 9, 2010
- GLOBALFOUNDRIES INC.
- Frank S. JOHNSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURES WITH STRESS-INDUCING SOURCE/DRAIN-FORMING SPACERS...
- Publication number 20100308381
- Publication date Dec 9, 2010
- GLOBALFOUNDRIES INC.
- Scott LUNING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTOR DEVICE WITH IMPROVED ISOLATION ARRANGEMENT...
- Publication number 20100059852
- Publication date Mar 11, 2010
- Advanced Micro Devices, Inc.
- Rohit PAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH ASYMMETRICAL EXTENSION IMPLANT
- Publication number 20090283806
- Publication date Nov 19, 2009
- Advanced Micro Devices, Inc.
- Frank Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DE...
- Publication number 20090267152
- Publication date Oct 29, 2009
- Advanced Micro Devices, Inc.
- Paul R. Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR TRANSISTOR WITH REDUCED GATE HEIGHT, AND...
- Publication number 20090256201
- Publication date Oct 15, 2009
- Advanced Micro Devices, Inc.
- Frank Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION SCHEME FOR CONSTRAINED SEG GROWTH ON POLY DURING RAISED...
- Publication number 20090236664
- Publication date Sep 24, 2009
- Advanced Micro Devices, Inc.
- David E. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED FIELD EFFECT TRANSISTOR AND METHODS FOR ITS FABRICATION
- Publication number 20090130803
- Publication date May 21, 2009
- Advanced Micro Devices, Inc.
- Andrew M. WAITE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS ENHANCED CMOS CIRCUITS
- Publication number 20090008718
- Publication date Jan 8, 2009
- Advanced Micro Devices, Inc.
- Gen PEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKING FAULT REDUCTION IN EPITAXIALLY GROWN SILICON
- Publication number 20080268609
- Publication date Oct 30, 2008
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING A STRESS ENHANCED SEMICONDUCTOR DEVICE HAVI...
- Publication number 20080261408
- Publication date Oct 23, 2008
- Advanced Micro Devices, Inc.
- Andrew M. WAITE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS ENHANCED MOS TRANSISTOR AND METHODS FOR ITS FABRICATION
- Publication number 20080220579
- Publication date Sep 11, 2008
- Advanced Micro Devices, Inc.
- Rohit PAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS ENHANCED CMOS CIRCUITS AND METHODS FOR THEIR FABRICATION
- Publication number 20080122002
- Publication date May 29, 2008
- Gen Pei
- H01 - BASIC ELECTRIC ELEMENTS

Scott Luning

Person

Patents Grantslast 30 patents

Simplified multi-threshold voltage scheme for fully depleted SOI MO...

Fully depleted silicon-on-insulator (FDSOI) transistor device and s...

Simplified gate to source/drain region connections

Method, apparatus, and system for using a cover mask for enabling m...

Method, apparatus, and system for using a cover mask for enabling m...

Fully depleted silicon-on-insulator (FDSOI) transistor device and s...

Pass-through contact using silicide

Simplified multi-threshold voltage scheme for fully depleted SOI MO...

CMOS circuit having a tensile stress layer overlying an NMOS transi...

Simplified multi-threshold voltage scheme for fully depleted SOI MO...

SRAM cell with individual electrical device threshold control

SRAM cell with individual electrical device threshold control

Semiconductor device with stressed fin sections

Methods for fabricating FinFET semiconductor devices using L-shaped...

MOSFET with asymmetrical extension implant

Stressed field effect transistor and methods for its fabrication

Embedded silicon germanium source drain structure with reduced sili...

Methods for fabricating non-planar semiconductor devices having str...

Semiconductor device with stressed fin sections, and related fabric...

FinFET structures with stress-inducing source/drain-forming spacers...

Metal oxide semiconductor transistor with reduced gate height, and...

Semiconductor device and method of manufacturing a semiconductor de...

Stacking fault reduction in epitaxially grown silicon

MOSFET with asymmetrical extension implant

Stacking fault reduction in epitaxially grown silicon

Semiconductor device and method of manufacturing a semiconductor de...

Integration scheme for constrained SEG growth on poly during raised...

Methods for fabricating a stress enhanced semiconductor device havi...

Stressed field effect transistor and methods for its fabrication

Stress enhanced CMOS circuits and methods for their fabrication

Patents Applicationslast 30 patents

SIMPLIFIED GATE TO SOURCE/DRAIN REGION CONNECTIONS

FULLY DEPLETED SILICON-ON-INSULATOR (FDSOI) TRANSISTOR DEVICE AND S...

METHOD, APPARATUS, AND SYSTEM FOR USING A COVER MASK FOR ENABLING M...

METHOD, APPARATUS, AND SYSTEM FOR USING A COVER MASK FOR ENABLING M...

SIMPLIFIED MULTI-THRESHOLD VOLTAGE SCHEME FOR FULLY DEPLETED SOI MO...

SIMPLIFIED MULTI-THRESHOLD VOLTAGE SCHEME FOR FULLY DEPLETED SOI MO...

SIMPLIFIED MULTI-THRESHOLD VOLTAGE SCHEME FOR FULLY DEPLETED SOI MO...

SRAM CELL WITH INDIVIDUAL ELECTRICAL DEVICE THRESHOLD CONTROL

SRAM CELL WITH INDIVIDUAL ELECTRICAL DEVICE THRESHOLD CONTROL

STRAINED MOS DEVICE AND METHODS FOR ITS FABRICATION

SEMICONDUCTOR DEVICE WITH STRESSED FIN SECTIONS

METAL OXIDE SEMICONDUCTOR TRANSISTOR WITH REDUCED GATE HEIGHT, AND...

SEMICONDUCTOR DEVICE WITH STRESSED FIN SECTIONS, AND RELATED FABRIC...

EMBEDDED SILICON GERMANIUM SOURCE DRAIN STRUCTURE WITH REDUCED SIL...

METHODS FOR FABRICATING NON-PLANAR SEMICONDUCTOR DEVICES HAVING STR...

MOSFET WITH ASYMMETRICAL EXTENSION IMPLANT

METHODS FOR FABRICATING FINFET SEMICONDUCTOR DEVICES USING L-SHAPED...

FINFET STRUCTURES WITH FINS HAVING STRESS-INDUCING CAPS AND METHODS...

FINFET STRUCTURES WITH STRESS-INDUCING SOURCE/DRAIN-FORMING SPACERS...

SEMICONDUCTOR TRANSISTOR DEVICE WITH IMPROVED ISOLATION ARRANGEMENT...

MOSFET WITH ASYMMETRICAL EXTENSION IMPLANT

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DE...

METAL OXIDE SEMICONDUCTOR TRANSISTOR WITH REDUCED GATE HEIGHT, AND...

INTEGRATION SCHEME FOR CONSTRAINED SEG GROWTH ON POLY DURING RAISED...

STRESSED FIELD EFFECT TRANSISTOR AND METHODS FOR ITS FABRICATION

STRESS ENHANCED CMOS CIRCUITS

STACKING FAULT REDUCTION IN EPITAXIALLY GROWN SILICON

METHODS FOR FABRICATING A STRESS ENHANCED SEMICONDUCTOR DEVICE HAVI...

STRESS ENHANCED MOS TRANSISTOR AND METHODS FOR ITS FABRICATION

STRESS ENHANCED CMOS CIRCUITS AND METHODS FOR THEIR FABRICATION