Scott W. LeFevre

Person

Ballston Spa, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Pre-etch treatment for metal etch
- Patent number 12,308,250
- Issue date May 20, 2025
- Tokyo Electron Limited
- Scott Lefevre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface fluorination remediation for aluminium oxide electrostatic...
- Patent number 11,626,271
- Issue date Apr 11, 2023
- Tokyo Electron Limited
- Scott Lefevre
- B08 - CLEANING
Information Patent Grant
Gas phase etch with controllable etch selectivity of Si-containing...
- Patent number 11,538,691
- Issue date Dec 27, 2022
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas phase etching system and method
- Patent number 11,380,554
- Issue date Jul 5, 2022
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas phase etch with controllable etch selectivity of Si-containing...
- Patent number 10,971,372
- Issue date Apr 6, 2021
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas phase etching system and method
- Patent number 10,580,660
- Issue date Mar 3, 2020
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for deep silicon etching using gas pulsing
- Patent number 9,054,050
- Issue date Jun 9, 2015
- Tokyo Electron Limited
- Scott W. LeFevre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Real time process control of the polymer dispersion index
- Patent number 8,962,067
- Issue date Feb 24, 2015
- Tokyo Electron Limited
- Bruce Adair Altemus
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
TUNGSTEN-BASED ADDITIVE FOR THROUGH-SUBSTRATE ETCHING
- Publication number 20250239457
- Publication date Jul 24, 2025
- TOKYO ELECTRON LIMITED
- Scott Lefevre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PROTECTING A PERIPHERAL EDGE AND BACKSIDE OF A SEMICOND...
- Publication number 20250226208
- Publication date Jul 10, 2025
- TOKYO ELECTRON LIMITED
- Shan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU FLUORESCENCE-BASED CHAMBER AND WAFER MONITORING
- Publication number 20250110055
- Publication date Apr 3, 2025
- TOKYO ELECTRON LIMITED
- David Eitan BARLAZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR SEMICONDUCTOR ETCHING
- Publication number 20240395557
- Publication date Nov 28, 2024
- TOKYO ELECTRON LIMITED
- Du ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR BONDING SEMICONDUCTOR DEVICES
- Publication number 20240243006
- Publication date Jul 18, 2024
- TOKYO ELECTRON LIMITED
- Scott Lefevre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDING LAYER AND PROCESS
- Publication number 20240234363
- Publication date Jul 11, 2024
- TOKYO ELECTRON LIMITED
- Scott LEFEVRE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMAL-INCIDENCE IN-SITU PROCESS MONITOR SENSOR
- Publication number 20240222100
- Publication date Jul 4, 2024
- TOKYO ELECTRON LIMITED
- Shan HU
- G01 - MEASURING TESTING
Information Patent Application
APPARATUS AND METHODS FOR PROCESSING BONDING SEMICONDUCTOR WAFERS
- Publication number 20240194478
- Publication date Jun 13, 2024
- TOKYO ELECTRON LIMITED
- Satohiko Hoshino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDING LAYER AND PROCESS
- Publication number 20240170444
- Publication date May 23, 2024
- TOKYO ELECTRON LIMITED
- Scott LEFEVRE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRE-ETCH TREATMENT FOR METAL ETCH
- Publication number 20230369064
- Publication date Nov 16, 2023
- TOKYO ELECTRON LIMITED
- Scott Lefevre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Surface Fluorination Remediation For Aluminium Oxide Electrostatic...
- Publication number 20210398784
- Publication date Dec 23, 2021
- TOKYO ELECTRON LIMITED
- Scott Lefevre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF Si-CONTAINING...
- Publication number 20210217628
- Publication date Jul 15, 2021
- TOKYO ELECTRON LIMITED
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS PHASE ETCHING SYSTEM AND METHOD
- Publication number 20200176266
- Publication date Jun 4, 2020
- TOKYO ELECTRON LIMITED
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS PHASE ETCHING SYSTEM AND METHOD
- Publication number 20160379835
- Publication date Dec 29, 2016
- TOKYO ELECTRON LIMITED
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF Si-CONTAINING...
- Publication number 20160379842
- Publication date Dec 29, 2016
- TOKYO ELECTRON LIMITED
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEEP SILICON ETCHING USING GAS PULSING
- Publication number 20150126033
- Publication date May 7, 2015
- TOKYO ELECTRON LIMITED
- Scott W. LeFevre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REAL TIME PROCESS CONTROL OF THE POLYMER DISPERSION INDEX
- Publication number 20140205742
- Publication date Jul 24, 2014
- TOKYO ELECTRON LIMITED
- Bruce Adair Altemus
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...

Scott W. LeFevre

Person

Patents Grantslast 30 patents

Pre-etch treatment for metal etch

Surface fluorination remediation for aluminium oxide electrostatic...

Gas phase etch with controllable etch selectivity of Si-containing...

Gas phase etching system and method

Gas phase etch with controllable etch selectivity of Si-containing...

Gas phase etching system and method

Method for deep silicon etching using gas pulsing

Real time process control of the polymer dispersion index

Patents Applicationslast 30 patents

TUNGSTEN-BASED ADDITIVE FOR THROUGH-SUBSTRATE ETCHING

METHODS FOR PROTECTING A PERIPHERAL EDGE AND BACKSIDE OF A SEMICOND...

IN-SITU FLUORESCENCE-BASED CHAMBER AND WAFER MONITORING

SYSTEMS AND METHODS FOR SEMICONDUCTOR ETCHING

SYSTEMS AND METHODS FOR BONDING SEMICONDUCTOR DEVICES

BONDING LAYER AND PROCESS

NORMAL-INCIDENCE IN-SITU PROCESS MONITOR SENSOR

APPARATUS AND METHODS FOR PROCESSING BONDING SEMICONDUCTOR WAFERS

BONDING LAYER AND PROCESS

PRE-ETCH TREATMENT FOR METAL ETCH

Surface Fluorination Remediation For Aluminium Oxide Electrostatic...

GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF Si-CONTAINING...

GAS PHASE ETCHING SYSTEM AND METHOD

GAS PHASE ETCHING SYSTEM AND METHOD

GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF Si-CONTAINING...

METHOD FOR DEEP SILICON ETCHING USING GAS PULSING

REAL TIME PROCESS CONTROL OF THE POLYMER DISPERSION INDEX