Scott W. LeFevre

Person

Ballston Spa, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Surface fluorination remediation for aluminium oxide electrostatic...
- Patent number 11,626,271
- Issue date Apr 11, 2023
- Tokyo Electron Limited
- Scott Lefevre
- B08 - CLEANING
Information Patent Grant
Gas phase etch with controllable etch selectivity of Si-containing...
- Patent number 11,538,691
- Issue date Dec 27, 2022
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas phase etching system and method
- Patent number 11,380,554
- Issue date Jul 5, 2022
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas phase etch with controllable etch selectivity of Si-containing...
- Patent number 10,971,372
- Issue date Apr 6, 2021
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas phase etching system and method
- Patent number 10,580,660
- Issue date Mar 3, 2020
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for deep silicon etching using gas pulsing
- Patent number 9,054,050
- Issue date Jun 9, 2015
- Tokyo Electron Limited
- Scott W. LeFevre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Real time process control of the polymer dispersion index
- Patent number 8,962,067
- Issue date Feb 24, 2015
- Tokyo Electron Limited
- Bruce Adair Altemus
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SYSTEMS AND METHODS FOR SEMICONDUCTOR ETCHING
- Publication number 20240395557
- Publication date Nov 28, 2024
- TOKYO ELECTRON LIMITED
- Du ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR BONDING SEMICONDUCTOR DEVICES
- Publication number 20240243006
- Publication date Jul 18, 2024
- TOKYO ELECTRON LIMITED
- Scott Lefevre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDING LAYER AND PROCESS
- Publication number 20240234363
- Publication date Jul 11, 2024
- TOKYO ELECTRON LIMITED
- Scott LEFEVRE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMAL-INCIDENCE IN-SITU PROCESS MONITOR SENSOR
- Publication number 20240222100
- Publication date Jul 4, 2024
- TOKYO ELECTRON LIMITED
- Shan HU
- G01 - MEASURING TESTING
Information Patent Application
APPARATUS AND METHODS FOR PROCESSING BONDING SEMICONDUCTOR WAFERS
- Publication number 20240194478
- Publication date Jun 13, 2024
- TOKYO ELECTRON LIMITED
- Satohiko Hoshino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDING LAYER AND PROCESS
- Publication number 20240170444
- Publication date May 23, 2024
- TOKYO ELECTRON LIMITED
- Scott LEFEVRE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRE-ETCH TREATMENT FOR METAL ETCH
- Publication number 20230369064
- Publication date Nov 16, 2023
- TOKYO ELECTRON LIMITED
- Scott Lefevre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Surface Fluorination Remediation For Aluminium Oxide Electrostatic...
- Publication number 20210398784
- Publication date Dec 23, 2021
- TOKYO ELECTRON LIMITED
- Scott Lefevre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF Si-CONTAINING...
- Publication number 20210217628
- Publication date Jul 15, 2021
- TOKYO ELECTRON LIMITED
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS PHASE ETCHING SYSTEM AND METHOD
- Publication number 20200176266
- Publication date Jun 4, 2020
- TOKYO ELECTRON LIMITED
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS PHASE ETCHING SYSTEM AND METHOD
- Publication number 20160379835
- Publication date Dec 29, 2016
- TOKYO ELECTRON LIMITED
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF Si-CONTAINING...
- Publication number 20160379842
- Publication date Dec 29, 2016
- TOKYO ELECTRON LIMITED
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEEP SILICON ETCHING USING GAS PULSING
- Publication number 20150126033
- Publication date May 7, 2015
- TOKYO ELECTRON LIMITED
- Scott W. LeFevre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REAL TIME PROCESS CONTROL OF THE POLYMER DISPERSION INDEX
- Publication number 20140205742
- Publication date Jul 24, 2014
- TOKYO ELECTRON LIMITED
- Bruce Adair Altemus
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...

Scott W. LeFevre

Person

Patents Grantslast 30 patents

Surface fluorination remediation for aluminium oxide electrostatic...

Gas phase etch with controllable etch selectivity of Si-containing...

Gas phase etching system and method

Gas phase etch with controllable etch selectivity of Si-containing...

Gas phase etching system and method

Method for deep silicon etching using gas pulsing

Real time process control of the polymer dispersion index

Patents Applicationslast 30 patents

SYSTEMS AND METHODS FOR SEMICONDUCTOR ETCHING

SYSTEMS AND METHODS FOR BONDING SEMICONDUCTOR DEVICES

BONDING LAYER AND PROCESS

NORMAL-INCIDENCE IN-SITU PROCESS MONITOR SENSOR

APPARATUS AND METHODS FOR PROCESSING BONDING SEMICONDUCTOR WAFERS

BONDING LAYER AND PROCESS

PRE-ETCH TREATMENT FOR METAL ETCH

Surface Fluorination Remediation For Aluminium Oxide Electrostatic...

GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF Si-CONTAINING...

GAS PHASE ETCHING SYSTEM AND METHOD

GAS PHASE ETCHING SYSTEM AND METHOD

GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF Si-CONTAINING...

METHOD FOR DEEP SILICON ETCHING USING GAS PULSING

REAL TIME PROCESS CONTROL OF THE POLYMER DISPERSION INDEX