Seamus A. McQuaid

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St. Louis, MO, US

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Patents Grantslast 30 patents

Information Patent Grant
Process for producing low defect density, ideal oxygen precipitatin...
- Patent number 6,896,728
- Issue date May 24, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing low defect density, ideal oxygen precipitatin...
- Patent number 6,555,194
- Issue date Apr 29, 2003
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low defect density, self-interstitial dominated silicon
- Patent number 6,409,826
- Issue date Jun 25, 2002
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low defect density self-interstitial dominated silicon
- Patent number 6,254,672
- Issue date Jul 3, 2001
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low defect density, ideal oxygen precipitating silicon
- Patent number 6,190,631
- Issue date Feb 20, 2001
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low defect density vacancy dominated silicon
- Patent number 5,919,302
- Issue date Jul 6, 1999
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Process for producing low defect density, ideal oxygen precipitatin...
- Publication number 20040025782
- Publication date Feb 12, 2004
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH