Sean M. Polvino

Person

Brooklyn, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-destructive dielectric layer thickness and dopant measuring method
- Patent number 9,892,979
- Issue date Feb 13, 2018
- GLOBALFOUNDRIES Inc.
- Kriteshwar K. Kohli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure having thin gate dielectric device and...
- Patent number 9,806,161
- Issue date Oct 31, 2017
- GLOBALFOUNDRIES Inc.
- Shahrukh A. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor fin with carbon dopant for diffusi...
- Patent number 9,685,334
- Issue date Jun 20, 2017
- GLOBALFOUNDRIES Inc.
- Yue Ke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple thickness gate dielectrics for replacement gate field effe...
- Patent number 9,368,593
- Issue date Jun 14, 2016
- International Business Machines Corporation
- Unoh Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K dielectric structure for deep trench isolation
- Patent number 9,224,740
- Issue date Dec 29, 2015
- GLOBALFOUNDRIES Inc.
- Sean M. Polvino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple thickness gate dielectrics for replacement gate field effe...
- Patent number 9,224,826
- Issue date Dec 29, 2015
- International Business Machines Corporation
- Unoh Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer work function metal replacement gate
- Patent number 8,659,077
- Issue date Feb 25, 2014
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer work function metal replacement gate
- Patent number 8,647,972
- Issue date Feb 11, 2014
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT STRUCTURE HAVING THIN GATE DIELECTRIC DEVICE AND...
- Publication number 20170294519
- Publication date Oct 12, 2017
- GLOBALFOUNDRIES INC.
- Shahrukh A. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-DESTRUCTIVE DIELECTRIC LAYER THICKNESS AND DOPANT MEASURING METHOD
- Publication number 20160372385
- Publication date Dec 22, 2016
- GLOBALFOUNDRIES INC.
- Kriteshwar K. Kohli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE THICKNESS GATE DIELECTRICS FOR REPLACEMENT GATE FIELD EFFE...
- Publication number 20160027893
- Publication date Jan 28, 2016
- International Business Machines Corporation
- Unoh Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE THICKNESS GATE DIELECTRICS FOR REPLACEMENT GATE FIELD EFFE...
- Publication number 20150228747
- Publication date Aug 13, 2015
- International Business Machines Corporation
- Unoh Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER WORK FUNCTION METAL REPLACEMENT GATE
- Publication number 20140070307
- Publication date Mar 13, 2014
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS

Sean M. Polvino

Person

Patents Grantslast 30 patents

Non-destructive dielectric layer thickness and dopant measuring method

Integrated circuit structure having thin gate dielectric device and...

Methods of forming semiconductor fin with carbon dopant for diffusi...

Multiple thickness gate dielectrics for replacement gate field effe...

High-K dielectric structure for deep trench isolation

Multiple thickness gate dielectrics for replacement gate field effe...

Multi-layer work function metal replacement gate

Multi-layer work function metal replacement gate

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT STRUCTURE HAVING THIN GATE DIELECTRIC DEVICE AND...

NON-DESTRUCTIVE DIELECTRIC LAYER THICKNESS AND DOPANT MEASURING METHOD

MULTIPLE THICKNESS GATE DIELECTRICS FOR REPLACEMENT GATE FIELD EFFE...

MULTIPLE THICKNESS GATE DIELECTRICS FOR REPLACEMENT GATE FIELD EFFE...

MULTI-LAYER WORK FUNCTION METAL REPLACEMENT GATE