SEAN T. MA

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Asymmetric gate structures and contacts for stacked transistors
- Patent number 12,342,614
- Issue date Jun 24, 2025
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D 1T1C stacked dram structure and method to fabricate
- Patent number 12,328,864
- Issue date Jun 10, 2025
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate spacing in integrated circuit structures
- Patent number 12,328,936
- Issue date Jun 10, 2025
- Intel Corporation
- Guillaume Bouche
Information Patent Grant
Transistor with isolation below source and drain
- Patent number 12,288,803
- Issue date Apr 29, 2025
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device contact sizing in integrated circuit structures
- Patent number 12,211,898
- Issue date Jan 28, 2025
- Intel Corporation
- Guillaume Bouche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing off-state leakage in semiconductor devices
- Patent number 12,191,349
- Issue date Jan 7, 2025
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor including wrap around source and drain contacts
- Patent number 12,142,689
- Issue date Nov 12, 2024
- Intel Corporation
- Sean Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked finFETs and shared gate patterning
- Patent number 12,100,623
- Issue date Sep 24, 2024
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance semiconductor oxide material channel regions for NMOS
- Patent number 12,068,319
- Issue date Aug 20, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-dielectric gate stack for crystalline thin film transistors
- Patent number 12,009,433
- Issue date Jun 11, 2024
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with gate electrode self-aligned to semico...
- Patent number 11,996,447
- Issue date May 28, 2024
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar transistor arrangements with asymmetric gate enclosures
- Patent number 11,984,487
- Issue date May 14, 2024
- Intel Corporation
- Sean T. Ma
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Device contacts in integrated circuit structures
- Patent number 11,973,121
- Issue date Apr 30, 2024
- Intel Corporation
- Guillaume Bouche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric gate stack for band-to-band tunneling reduction
- Patent number 11,929,435
- Issue date Mar 12, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with isolation below source and drain
- Patent number 11,923,410
- Issue date Mar 5, 2024
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain regions in integrated circuit structures
- Patent number 11,916,106
- Issue date Feb 27, 2024
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel structures for thin-film transistors
- Patent number 11,881,517
- Issue date Jan 23, 2024
- Intel Corporation
- Abhishek Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical multi-gate thin film transistors
- Patent number 11,862,729
- Issue date Jan 2, 2024
- Intel Corporation
- Yih Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top-gate doped thin film transistor
- Patent number 11,862,730
- Issue date Jan 2, 2024
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D 1T1C stacked DRAM structure and method to fabricate
- Patent number 11,849,572
- Issue date Dec 19, 2023
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Subfin leakage suppression using fixed charge
- Patent number 11,784,239
- Issue date Oct 10, 2023
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium-containing fin of a transistor device with an indium-rich core
- Patent number 11,764,275
- Issue date Sep 19, 2023
- Intel Corporation
- Chandra S. Mohapatra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source-channel junction for III-V metal-oxide-semiconductor field e...
- Patent number 11,756,998
- Issue date Sep 12, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation regions in integrated circuit structures
- Patent number 11,749,715
- Issue date Sep 5, 2023
- Intel Corporation
- Guillaume Bouche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel layer formation for III-V metal-oxide-semiconductor field e...
- Patent number 11,695,081
- Issue date Jul 4, 2023
- Intel Corporation
- Sean Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FINFET transistor having a doped sub fin structure to reduce channe...
- Patent number 11,670,682
- Issue date Jun 6, 2023
- Tahoe Research, LTD.
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked memory elements with air gap
- Patent number 11,672,133
- Issue date Jun 6, 2023
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor with charge trap layer
- Patent number 11,658,222
- Issue date May 23, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked transistors in a fin
- Patent number 11,658,072
- Issue date May 23, 2023
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with air-gaps to reduce coupling capacitance and process for...
- Patent number 11,574,910
- Issue date Feb 7, 2023
- Intel Corporation
- Abhishek Sharma
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SOURCE/DRAIN REGIONS IN INTEGRATED CIRCUIT STRUCTURES
- Publication number 20240162289
- Publication date May 16, 2024
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN
- Publication number 20240113161
- Publication date Apr 4, 2024
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP-GATE DOPED THIN FILM TRANSISTOR
- Publication number 20240105852
- Publication date Mar 28, 2024
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D 1T1C STACKED DRAM STRUCTURE AND METHOD TO FABRICATE
- Publication number 20240064958
- Publication date Feb 22, 2024
- Intel Corporation
- Aaron LILAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT ARCHITECTURE FOR 2D STACKED NANORIBBON TRANSISTOR
- Publication number 20240006484
- Publication date Jan 4, 2024
- Intel Corporation
- Ashish Verma PENUMATCHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC GATE STRUCTURES AND CONTACTS FOR STACKED TRANSISTORS
- Publication number 20230178552
- Publication date Jun 8, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE-SIDED NANOSHEET TRANSISTORS
- Publication number 20230114214
- Publication date Apr 13, 2023
- Intel Corporation
- Stephen Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED MEMORY STRUCTURE WITH DUAL-CHANNEL TRANSISTOR
- Publication number 20230081882
- Publication date Mar 16, 2023
- Intel Corporation
- Sean T. Ma
- G11 - INFORMATION STORAGE
Information Patent Application
GATE SPACING IN INTEGRATED CIRCUIT STRUCTURES
- Publication number 20230073304
- Publication date Mar 9, 2023
- Intel Corporation
- Guillaume Bouche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING VERTICALLY DIS...
- Publication number 20230074199
- Publication date Mar 9, 2023
- Intel Corporation
- Glenn GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES AND METHODS FOR MEMORY CELLS
- Publication number 20230057464
- Publication date Feb 23, 2023
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR INCLUDING WRAP AROUND SOURCE AND DRAIN CONTACTS
- Publication number 20230006067
- Publication date Jan 5, 2023
- Intel Corporation
- Sean MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC GATE STACK FOR BAND-TO-BAND TUNNELING REDUCTION
- Publication number 20230006065
- Publication date Jan 5, 2023
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE CONTACT SIZING IN INTEGRATED CIRCUIT STRUCTURES
- Publication number 20220359658
- Publication date Nov 10, 2022
- Intel Corporation
- Guillaume Bouche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN REGIONS IN INTEGRATED CIRCUIT STRUCTURES
- Publication number 20220344459
- Publication date Oct 27, 2022
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY STACKED FINFETS & SHARED GATE PATTERNING
- Publication number 20220336284
- Publication date Oct 20, 2022
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP-GATE DOPED THIN FILM TRANSISTOR
- Publication number 20220328697
- Publication date Oct 13, 2022
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STRUCTURES FOR THIN-FILM TRANSISTORS
- Publication number 20220238685
- Publication date Jul 28, 2022
- Intel Corporation
- Abhishek SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION REGIONS IN INTEGRATED CIRCUIT STRUCTURES
- Publication number 20220231121
- Publication date Jul 21, 2022
- Intel Corporation
- Guillaume Bouche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH GATE ELECTRODE SELF-ALIGNED TO SEMICO...
- Publication number 20220181442
- Publication date Jun 9, 2022
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MULTI-GATE THIN FILM TRANSISTORS
- Publication number 20220149208
- Publication date May 12, 2022
- Intel Corporation
- Yih Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE-CHANNEL JUNCTION FOR III-V METAL-OXIDE-SEMICONDUCTOR FIELD E...
- Publication number 20220140076
- Publication date May 5, 2022
- Intel Corporation
- Cheng-Ying HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN
- Publication number 20220028972
- Publication date Jan 27, 2022
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR TRANSISTOR ARRANGEMENTS WITH ASYMMETRIC GATE ENCLOSURES
- Publication number 20210384299
- Publication date Dec 9, 2021
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN REGIONS IN INTEGRATED CIRCUIT STRUCTURES
- Publication number 20210384307
- Publication date Dec 9, 2021
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY STACKED TRANSISTORS IN A FIN
- Publication number 20210351078
- Publication date Nov 11, 2021
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE CONTACT SIZING IN INTEGRATED CIRCUIT STRUCTURES
- Publication number 20210305370
- Publication date Sep 30, 2021
- Intel Corporation
- Guillaume Bouche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN REGIONS IN INTEGRATED CIRCUIT STRUCTURES
- Publication number 20210305367
- Publication date Sep 30, 2021
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE SPACING IN INTEGRATED CIRCUIT STRUCTURES
- Publication number 20210305244
- Publication date Sep 30, 2021
- Intel Corporation
- Guillaume Bouche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION REGIONS IN INTEGRATED CIRCUIT STRUCTURES
- Publication number 20210305362
- Publication date Sep 30, 2021
- Intel Corporation
- Guillaume Bouche
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Asymmetric gate structures and contacts for stacked transistors

3D 1T1C stacked dram structure and method to fabricate

Gate spacing in integrated circuit structures

Transistor with isolation below source and drain

Device contact sizing in integrated circuit structures

Reducing off-state leakage in semiconductor devices

Transistor including wrap around source and drain contacts

Vertically stacked finFETs and shared gate patterning

High performance semiconductor oxide material channel regions for NMOS

Multi-dielectric gate stack for crystalline thin film transistors

Field effect transistors with gate electrode self-aligned to semico...

Non-planar transistor arrangements with asymmetric gate enclosures

Device contacts in integrated circuit structures

Ferroelectric gate stack for band-to-band tunneling reduction

Transistor with isolation below source and drain

Source/drain regions in integrated circuit structures

Channel structures for thin-film transistors

Vertical multi-gate thin film transistors

Top-gate doped thin film transistor

3D 1T1C stacked DRAM structure and method to fabricate

Subfin leakage suppression using fixed charge

Indium-containing fin of a transistor device with an indium-rich core

Source-channel junction for III-V metal-oxide-semiconductor field e...

Isolation regions in integrated circuit structures

Channel layer formation for III-V metal-oxide-semiconductor field e...

FINFET transistor having a doped sub fin structure to reduce channe...

Vertically stacked memory elements with air gap

Thin film transistor with charge trap layer

Vertically stacked transistors in a fin

Device with air-gaps to reduce coupling capacitance and process for...

Patents Applicationslast 30 patents

SOURCE/DRAIN REGIONS IN INTEGRATED CIRCUIT STRUCTURES

TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN

TOP-GATE DOPED THIN FILM TRANSISTOR

3D 1T1C STACKED DRAM STRUCTURE AND METHOD TO FABRICATE

CONTACT ARCHITECTURE FOR 2D STACKED NANORIBBON TRANSISTOR

ASYMMETRIC GATE STRUCTURES AND CONTACTS FOR STACKED TRANSISTORS

SINGLE-SIDED NANOSHEET TRANSISTORS

STACKED MEMORY STRUCTURE WITH DUAL-CHANNEL TRANSISTOR

GATE SPACING IN INTEGRATED CIRCUIT STRUCTURES

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING VERTICALLY DIS...

STRUCTURES AND METHODS FOR MEMORY CELLS

TRANSISTOR INCLUDING WRAP AROUND SOURCE AND DRAIN CONTACTS

FERROELECTRIC GATE STACK FOR BAND-TO-BAND TUNNELING REDUCTION

DEVICE CONTACT SIZING IN INTEGRATED CIRCUIT STRUCTURES

SOURCE/DRAIN REGIONS IN INTEGRATED CIRCUIT STRUCTURES

VERTICALLY STACKED FINFETS & SHARED GATE PATTERNING

TOP-GATE DOPED THIN FILM TRANSISTOR

CHANNEL STRUCTURES FOR THIN-FILM TRANSISTORS

ISOLATION REGIONS IN INTEGRATED CIRCUIT STRUCTURES

FIELD EFFECT TRANSISTORS WITH GATE ELECTRODE SELF-ALIGNED TO SEMICO...

VERTICAL MULTI-GATE THIN FILM TRANSISTORS

SOURCE-CHANNEL JUNCTION FOR III-V METAL-OXIDE-SEMICONDUCTOR FIELD E...

TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN

NON-PLANAR TRANSISTOR ARRANGEMENTS WITH ASYMMETRIC GATE ENCLOSURES

SOURCE/DRAIN REGIONS IN INTEGRATED CIRCUIT STRUCTURES

VERTICALLY STACKED TRANSISTORS IN A FIN

DEVICE CONTACT SIZING IN INTEGRATED CIRCUIT STRUCTURES

SOURCE/DRAIN REGIONS IN INTEGRATED CIRCUIT STRUCTURES

GATE SPACING IN INTEGRATED CIRCUIT STRUCTURES

ISOLATION REGIONS IN INTEGRATED CIRCUIT STRUCTURES