Sean Teehan

Person

Rensselaer, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of forming the semiconductor device
- Patent number 11,869,937
- Issue date Jan 9, 2024
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the semiconductor device
- Patent number 11,869,936
- Issue date Jan 9, 2024
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Elevator analytics facilitating passenger destination prediction an...
- Patent number 11,673,766
- Issue date Jun 13, 2023
- International Business Machines Corporation
- Gauri Karve
- B66 - HOISTING LIFTING HAULING
Information Patent Grant
Nanosheet channel-to-source and drain isolation
- Patent number 11,652,161
- Issue date May 16, 2023
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunneling field effect transistor with dual liner bottom s...
- Patent number 11,646,235
- Issue date May 9, 2023
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap spacer for metal gates
- Patent number 11,557,589
- Issue date Jan 17, 2023
- Tessera, LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the semiconductor device
- Patent number 11,239,316
- Issue date Feb 1, 2022
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced contact resistance
- Patent number 11,152,252
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunneling field effect transistor with dual liner bottom s...
- Patent number 11,152,266
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the semiconductor device
- Patent number 11,127,815
- Issue date Sep 21, 2021
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate having tapered segments positioned above the fin ch...
- Patent number 11,075,299
- Issue date Jul 27, 2021
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet channel-to-source and drain isolation
- Patent number 11,043,581
- Issue date Jun 22, 2021
- Tessera, Inc.
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-fin removal for SOI like isolation with uniform active fin height
- Patent number 10,937,810
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of fin field effect transistors for complementary metal...
- Patent number 10,886,271
- Issue date Jan 5, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super long channel device within VFET architecture
- Patent number 10,833,190
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Marc A. Bergendahl
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Fabrication of fin field effect transistors for complementary metal...
- Patent number 10,818,663
- Issue date Oct 27, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for enabling high aspect ratio sacrificial gates
- Patent number 10,629,698
- Issue date Apr 21, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet channel-to-source and drain isolation
- Patent number 10,615,269
- Issue date Apr 7, 2020
- Terresa, Inc.
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap spacer for metal gates
- Patent number 10,607,991
- Issue date Mar 31, 2020
- Tessera, Inc.
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super long channel device within VFET architecture
- Patent number 10,573,745
- Issue date Feb 25, 2020
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap spacer for metal gates
- Patent number 10,553,581
- Issue date Feb 4, 2020
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced contact resistance
- Patent number 10,541,172
- Issue date Jan 21, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for enabling controlled spacer RIE
- Patent number 10,446,452
- Issue date Oct 15, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-fin removal for SOI like isolation with uniform active fin height
- Patent number 10,438,972
- Issue date Oct 8, 2019
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super long channel device within VFET architecture
- Patent number 10,424,663
- Issue date Sep 24, 2019
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming stacked nanowire semiconductor device
- Patent number 10,396,181
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the semiconductor device
- Patent number 10,381,437
- Issue date Aug 13, 2019
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Margin for fin cut using self-aligned triple patterning
- Patent number 10,304,689
- Issue date May 28, 2019
- International Business Machines Corporation
- Gauri Karve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transport field effect transistor with precise gate length...
- Patent number 10,269,931
- Issue date Apr 23, 2019
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming stacked nanowire semiconductor device
- Patent number 10,256,326
- Issue date Apr 9, 2019
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION
- Publication number 20240088268
- Publication date Mar 14, 2024
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP SPACER FOR METAL GATES
- Publication number 20230352480
- Publication date Nov 2, 2023
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHYSICAL UNCLONABLE FUNCTION LEVERAGING STOCHASTIC VARIATIONS OF PA...
- Publication number 20230171114
- Publication date Jun 1, 2023
- International Business Machines Corporation
- Dallas Lea
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE
- Publication number 20220140074
- Publication date May 5, 2022
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE
- Publication number 20210376078
- Publication date Dec 2, 2021
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH DUAL LINER BOTTOM S...
- Publication number 20210351082
- Publication date Nov 11, 2021
- International Business Machines Corporation
- ERIC MILLER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION
- Publication number 20210305405
- Publication date Sep 30, 2021
- Tessera, Inc.
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH DUAL LINER BOTTOM S...
- Publication number 20210104440
- Publication date Apr 8, 2021
- International Business Machines Corporation
- ERIC MILLER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE HAVING TAPERED SEGMENTS POSITIONED ABOVE THE FIN CH...
- Publication number 20210005749
- Publication date Jan 7, 2021
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION
- Publication number 20200266284
- Publication date Aug 20, 2020
- Tessera, Inc.
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP SPACER FOR METAL GATES
- Publication number 20200235094
- Publication date Jul 23, 2020
- Tessera, Inc.
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELEVATOR ANALYTICS FACILITATING PASSENGER DESTINATION PREDICTION AN...
- Publication number 20200130983
- Publication date Apr 30, 2020
- International Business Machines Corporation
- Gauri Karve
- B66 - HOISTING LIFTING HAULING
Information Patent Application
SEMICONDUCTOR DEVICE WITH REDUCED CONTACT RESISTANCE
- Publication number 20200075400
- Publication date Mar 5, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sub-Fin Removal for SOI Like Isolation with Uniform Active Fin Height
- Publication number 20190371822
- Publication date Dec 5, 2019
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER LONG CHANNEL DEVICE WITHIN VFET ARCHITECTURE
- Publication number 20190341490
- Publication date Nov 7, 2019
- International Business Machines Corporation
- Marc A. Bergendahl
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE
- Publication number 20190259833
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE
- Publication number 20190259832
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION
- Publication number 20180374930
- Publication date Dec 27, 2018
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CYCLIC ETCH PROCESS TO REMOVE DUMMY GATE OXIDE LAYER FOR FIN FIELD...
- Publication number 20180358232
- Publication date Dec 13, 2018
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF FIN FIELD EFFECT TRANSISTORS FOR COMPLEMENTARY METAL...
- Publication number 20180350812
- Publication date Dec 6, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER LONG CHANNEL DEVICE WITHIN VFET ARCHITECTURE
- Publication number 20180342614
- Publication date Nov 29, 2018
- International Business Machines Corporation
- Marc A. Bergendahl
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SUPER LONG CHANNEL DEVICE WITHIN VFET ARCHITECTURE
- Publication number 20180342615
- Publication date Nov 29, 2018
- International Business Machines Corporation
- Marc A. Bergendahl
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
FORMING STACKED NANOWIRE SEMICONDUCTOR DEVICE
- Publication number 20180337261
- Publication date Nov 22, 2018
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNDER-CHANNEL GATE TRANSISTORS
- Publication number 20180308978
- Publication date Oct 25, 2018
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP SPACER FOR METAL GATES
- Publication number 20180294263
- Publication date Oct 11, 2018
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MARGIN FOR FIN CUT USING SELF-ALIGNED TRIPLE PATTERNING
- Publication number 20180226262
- Publication date Aug 9, 2018
- International Business Machines Corporation
- Gauri KARVE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY ALIGNED NANOWIRE CHANNELS WITH SOURCE/DRAIN INTERCONNECT...
- Publication number 20180219101
- Publication date Aug 2, 2018
- International Business Machines Corporation
- Marc A. BERGENDAHL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN PATTERNS WITH VARYING SPACING WITHOUT FIN CUT
- Publication number 20180197739
- Publication date Jul 12, 2018
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN PATTERNS WITH VARYING SPACING WITHOUT FIN CUT
- Publication number 20180190491
- Publication date Jul 5, 2018
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP SPACER FOR METAL GATES
- Publication number 20180158818
- Publication date Jun 7, 2018
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS

Sean Teehan

Person

Patents Grantslast 30 patents

Semiconductor device and method of forming the semiconductor device

Semiconductor device and method of forming the semiconductor device

Elevator analytics facilitating passenger destination prediction an...

Nanosheet channel-to-source and drain isolation

Vertical tunneling field effect transistor with dual liner bottom s...

Air gap spacer for metal gates

Semiconductor device and method of forming the semiconductor device

Semiconductor device with reduced contact resistance

Vertical tunneling field effect transistor with dual liner bottom s...

Semiconductor device and method of forming the semiconductor device

Transistor gate having tapered segments positioned above the fin ch...

Nanosheet channel-to-source and drain isolation

Sub-fin removal for SOI like isolation with uniform active fin height

Fabrication of fin field effect transistors for complementary metal...

Super long channel device within VFET architecture

Fabrication of fin field effect transistors for complementary metal...

Method and structure for enabling high aspect ratio sacrificial gates

Nanosheet channel-to-source and drain isolation

Air gap spacer for metal gates

Super long channel device within VFET architecture

Air gap spacer for metal gates

Semiconductor device with reduced contact resistance

Method and structure for enabling controlled spacer RIE

Sub-fin removal for SOI like isolation with uniform active fin height

Super long channel device within VFET architecture

Forming stacked nanowire semiconductor device

Semiconductor device and method of forming the semiconductor device

Margin for fin cut using self-aligned triple patterning

Vertical transport field effect transistor with precise gate length...

Forming stacked nanowire semiconductor device

Patents Applicationslast 30 patents

NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION

AIR GAP SPACER FOR METAL GATES

PHYSICAL UNCLONABLE FUNCTION LEVERAGING STOCHASTIC VARIATIONS OF PA...

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH DUAL LINER BOTTOM S...

NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION

VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH DUAL LINER BOTTOM S...

TRANSISTOR GATE HAVING TAPERED SEGMENTS POSITIONED ABOVE THE FIN CH...

NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION

AIR GAP SPACER FOR METAL GATES

ELEVATOR ANALYTICS FACILITATING PASSENGER DESTINATION PREDICTION AN...

SEMICONDUCTOR DEVICE WITH REDUCED CONTACT RESISTANCE

Sub-Fin Removal for SOI Like Isolation with Uniform Active Fin Height

SUPER LONG CHANNEL DEVICE WITHIN VFET ARCHITECTURE

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION

CYCLIC ETCH PROCESS TO REMOVE DUMMY GATE OXIDE LAYER FOR FIN FIELD...

FABRICATION OF FIN FIELD EFFECT TRANSISTORS FOR COMPLEMENTARY METAL...

SUPER LONG CHANNEL DEVICE WITHIN VFET ARCHITECTURE

SUPER LONG CHANNEL DEVICE WITHIN VFET ARCHITECTURE

FORMING STACKED NANOWIRE SEMICONDUCTOR DEVICE

UNDER-CHANNEL GATE TRANSISTORS

AIR GAP SPACER FOR METAL GATES

MARGIN FOR FIN CUT USING SELF-ALIGNED TRIPLE PATTERNING

VERTICALLY ALIGNED NANOWIRE CHANNELS WITH SOURCE/DRAIN INTERCONNECT...

FIN PATTERNS WITH VARYING SPACING WITHOUT FIN CUT

FIN PATTERNS WITH VARYING SPACING WITHOUT FIN CUT

AIR GAP SPACER FOR METAL GATES