Seetharaman Sridhar

Person

Irving, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Electrostatic discharge guard ring with complementary drain extende...
- Patent number 12,094,970
- Issue date Sep 17, 2024
- Texas Instruments Incorporated
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integration of high and low-side GaN FETs with screening...
- Patent number 11,888,027
- Issue date Jan 30, 2024
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench shield isolation layer
- Patent number 11,791,198
- Issue date Oct 17, 2023
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge guard ring with snapback protection
- Patent number 11,764,208
- Issue date Sep 19, 2023
- Texas Instruments Incorporated
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical trench gate MOSFET with integrated Schottky diode
- Patent number 11,658,241
- Issue date May 23, 2023
- Texas Instruments Incorporated
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain-extended transistor
- Patent number 11,456,381
- Issue date Sep 27, 2022
- Texas Instruments Incorporated
- Meng-Chia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a lateral insulator
- Patent number 11,322,594
- Issue date May 3, 2022
- Texas Instruments Incorporated
- Fei Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage lateral junction diode device
- Patent number 11,322,610
- Issue date May 3, 2022
- Texas Instruments Incorporated
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench shield isolation layer
- Patent number 11,302,568
- Issue date Apr 12, 2022
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage drain expended MOS transistor
- Patent number 11,239,318
- Issue date Feb 1, 2022
- Texas Instruments Incorporated
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with a sloped surface
- Patent number 11,195,915
- Issue date Dec 7, 2021
- Texas Instruments Incorporated
- Haian Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical trench gate MOSFET with deep well region for junction term...
- Patent number 11,127,852
- Issue date Sep 21, 2021
- Texas Instruments Incorporated
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge guard ring with complementary drain extende...
- Patent number 10,950,720
- Issue date Mar 16, 2021
- Texas Instruments Incorporated
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-mode high voltage circuit
- Patent number 10,936,000
- Issue date Mar 2, 2021
- Texas Instruments Incorporated
- Michael Ryan Hanschke
- G05 - CONTROLLING REGULATING
Information Patent Grant
ESD guard ring with snapback protection and lateral buried layers
- Patent number 10,896,904
- Issue date Jan 19, 2021
- Texas Instruments Incorporated
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistor divider with improved resistor matching
- Patent number 10,840,241
- Issue date Nov 17, 2020
- Texas Instruments Incorporated
- Sunglyong Kim
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor device having polysilicon field plate for power MOSFETs
- Patent number 10,720,499
- Issue date Jul 21, 2020
- Texas Instruments Incorporated
- Ya ping Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage CMOS with triple gate oxide
- Patent number 10,714,474
- Issue date Jul 14, 2020
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor with terminal trenches in terminal resurf regions
- Patent number 10,672,901
- Issue date Jun 2, 2020
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage drain extended MOS transistor
- Patent number 10,651,274
- Issue date May 12, 2020
- Texas Instruments Incorporated
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated high-side driver for P-N bimodal power device
- Patent number 10,601,422
- Issue date Mar 24, 2020
- Texas Instruments Incorporated
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scheme to align LDMOS drain extension to moat
- Patent number 10,593,795
- Issue date Mar 17, 2020
- Texas Instruments Incorporated
- Seetharaman Sridhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor product and fabrication process
- Patent number 10,573,553
- Issue date Feb 25, 2020
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage lateral junction diode device
- Patent number 10,559,681
- Issue date Feb 11, 2020
- Texas Instruments Incorporated
- Sunglyong Kim
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Multiple shielding trench gate FET
- Patent number 10,541,326
- Issue date Jan 21, 2020
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge guard ring with snapback protection
- Patent number 10,504,885
- Issue date Dec 10, 2019
- Texas Instruments Incorporated
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge guard ring with snapback protection
- Patent number 10,347,621
- Issue date Jul 9, 2019
- Texas Instruments Incorporated
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolation with tank contact grounding
- Patent number 10,304,719
- Issue date May 28, 2019
- Texas Instruments Incorporated
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor with terminal trenches in terminal resurf regions
- Patent number 10,256,337
- Issue date Apr 9, 2019
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor product and fabrication process
- Patent number 10,211,096
- Issue date Feb 19, 2019
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT WITH IMPROVED ISOLATION
- Publication number 20240363394
- Publication date Oct 31, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC INTEGRATION OF HIGH AND LOW-SIDE GAN FETS WITH SCREENING...
- Publication number 20240120383
- Publication date Apr 11, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SHIELDED TRANSISTOR
- Publication number 20240113217
- Publication date Apr 4, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE GUARD RING WITH SNAPBACK PROTECTION
- Publication number 20230395589
- Publication date Dec 7, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRENCH GATE MOSFET WITH INTEGRATED SCHOTTKY DIODE
- Publication number 20230246107
- Publication date Aug 3, 2023
- TEXAS INSTRUMENTS INCORPORATED
- SUNGLYONG KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC INTEGRATION OF HIGH AND LOW-SIDE GAN FETS WITH SCREENING...
- Publication number 20230197784
- Publication date Jun 22, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE GUARD RING WITH SNAPBACK PROTECTION
- Publication number 20230132375
- Publication date Apr 27, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR HAVING FRACTIONALLY ENHANCED BODY STRUCTURE
- Publication number 20230101610
- Publication date Mar 30, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Meng-Chia LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FINGER LAYOUT TRANSISTOR
- Publication number 20230061337
- Publication date Mar 2, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Jungwoo Joh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRENCH GATE FET WITH SPLIT GATE
- Publication number 20220223731
- Publication date Jul 14, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Sunglyong KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SHIELD ISOLATION LAYER
- Publication number 20220208601
- Publication date Jun 30, 2022
- TEXAS INSTRUMENTS INCORPORATED
- HONG YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAIN-EXTENDED TRANSISTOR
- Publication number 20220190158
- Publication date Jun 16, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Meng-Chia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A LATERAL INSULATOR
- Publication number 20220052165
- Publication date Feb 17, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Fei Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE GUARD RING WITH COMPLEMENTARY DRAIN EXTENDE...
- Publication number 20210167206
- Publication date Jun 3, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE GUARD RING WITH SNAPBACK PROTECTION
- Publication number 20210143145
- Publication date May 13, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-MODE HIGH VOLTAGE CIRCUIT
- Publication number 20210064070
- Publication date Mar 4, 2021
- TEXAS INSTRUMENTS INCORPORATED
- MICHAEL RYAN HANSCHKE
- G05 - CONTROLLING REGULATING
Information Patent Application
SEMICONDUCTOR DEVICE HAVING POLYSILICON FIELD PLATE FOR POWER MOSFETS
- Publication number 20200335589
- Publication date Oct 22, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Ya ping Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH A SLOPED SURFACE
- Publication number 20200328275
- Publication date Oct 15, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Haian LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SHIELD ISOLATION LAYER
- Publication number 20200312710
- Publication date Oct 1, 2020
- TEXAS INSTRUMENTS INCORPORATED
- HONG YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE DRAIN EXTENDED MOS TRANSISTOR
- Publication number 20200243647
- Publication date Jul 30, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistor Divider with Improved Resistor Matching
- Publication number 20200219872
- Publication date Jul 9, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRENCH GATE MOSFET WITH DEEP WELL REGION FOR JUNCTION TERM...
- Publication number 20200212218
- Publication date Jul 2, 2020
- TEXAS INSTRUMENTS INCORPORATED
- SUNGLYONG KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRENCH GATE MOSFET WITH INTEGRATED SCHOTTKY DIODE
- Publication number 20200212219
- Publication date Jul 2, 2020
- TEXAS INSTRUMENTS INCORPORATED
- SUNGLYONG KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE LATERAL JUNCTION DIODE DEVICE
- Publication number 20200168733
- Publication date May 28, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Sunglyong Kim
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
ELECTROSTATIC DISCHARGE GUARD RING WITH SNAPBACK PROTECTION
- Publication number 20200075576
- Publication date Mar 5, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING POLYSILICON FIELD PLATE FOR POWER MOSFETS
- Publication number 20190296115
- Publication date Sep 26, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Ya ping Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE GUARD RING WITH SNAPBACK PROTECTION
- Publication number 20190279976
- Publication date Sep 12, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER TRANSISTOR WITH TERMINAL TRENCHES IN TERMINAL RESURF REGIONS
- Publication number 20190259868
- Publication date Aug 22, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE DRAIN EXTENDED MOS TRANSISTOR
- Publication number 20190206997
- Publication date Jul 4, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE LATERAL JUNCTION DIODE DEVICE
- Publication number 20190198666
- Publication date Jun 27, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS

Seetharaman Sridhar

Person

Patents Grantslast 30 patents

Electrostatic discharge guard ring with complementary drain extende...

Monolithic integration of high and low-side GaN FETs with screening...

Trench shield isolation layer

Electrostatic discharge guard ring with snapback protection

Vertical trench gate MOSFET with integrated Schottky diode

Drain-extended transistor

Semiconductor device including a lateral insulator

High voltage lateral junction diode device

Trench shield isolation layer

High-voltage drain expended MOS transistor

Semiconductor devices with a sloped surface

Vertical trench gate MOSFET with deep well region for junction term...

Electrostatic discharge guard ring with complementary drain extende...

Multi-mode high voltage circuit

ESD guard ring with snapback protection and lateral buried layers

Resistor divider with improved resistor matching

Semiconductor device having polysilicon field plate for power MOSFETs

High voltage CMOS with triple gate oxide

Power transistor with terminal trenches in terminal resurf regions

High-voltage drain extended MOS transistor

Integrated high-side driver for P-N bimodal power device

Scheme to align LDMOS drain extension to moat

Semiconductor product and fabrication process

High voltage lateral junction diode device

Multiple shielding trench gate FET

Electrostatic discharge guard ring with snapback protection

Electrostatic discharge guard ring with snapback protection

Deep trench isolation with tank contact grounding

Power transistor with terminal trenches in terminal resurf regions

Semiconductor product and fabrication process

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT WITH IMPROVED ISOLATION

MONOLITHIC INTEGRATION OF HIGH AND LOW-SIDE GAN FETS WITH SCREENING...

TRENCH SHIELDED TRANSISTOR

ELECTROSTATIC DISCHARGE GUARD RING WITH SNAPBACK PROTECTION

VERTICAL TRENCH GATE MOSFET WITH INTEGRATED SCHOTTKY DIODE

MONOLITHIC INTEGRATION OF HIGH AND LOW-SIDE GAN FETS WITH SCREENING...

ELECTROSTATIC DISCHARGE GUARD RING WITH SNAPBACK PROTECTION

FIELD-EFFECT TRANSISTOR HAVING FRACTIONALLY ENHANCED BODY STRUCTURE

HIGH VOLTAGE FINGER LAYOUT TRANSISTOR

VERTICAL TRENCH GATE FET WITH SPLIT GATE

TRENCH SHIELD ISOLATION LAYER

DRAIN-EXTENDED TRANSISTOR

SEMICONDUCTOR DEVICE INCLUDING A LATERAL INSULATOR

ELECTROSTATIC DISCHARGE GUARD RING WITH COMPLEMENTARY DRAIN EXTENDE...

ELECTROSTATIC DISCHARGE GUARD RING WITH SNAPBACK PROTECTION

MULTI-MODE HIGH VOLTAGE CIRCUIT

SEMICONDUCTOR DEVICE HAVING POLYSILICON FIELD PLATE FOR POWER MOSFETS

SEMICONDUCTOR DEVICES WITH A SLOPED SURFACE

TRENCH SHIELD ISOLATION LAYER

HIGH-VOLTAGE DRAIN EXTENDED MOS TRANSISTOR

Resistor Divider with Improved Resistor Matching

VERTICAL TRENCH GATE MOSFET WITH DEEP WELL REGION FOR JUNCTION TERM...

VERTICAL TRENCH GATE MOSFET WITH INTEGRATED SCHOTTKY DIODE

HIGH VOLTAGE LATERAL JUNCTION DIODE DEVICE

ELECTROSTATIC DISCHARGE GUARD RING WITH SNAPBACK PROTECTION

SEMICONDUCTOR DEVICE HAVING POLYSILICON FIELD PLATE FOR POWER MOSFETS

ELECTROSTATIC DISCHARGE GUARD RING WITH SNAPBACK PROTECTION

POWER TRANSISTOR WITH TERMINAL TRENCHES IN TERMINAL RESURF REGIONS

HIGH-VOLTAGE DRAIN EXTENDED MOS TRANSISTOR

HIGH VOLTAGE LATERAL JUNCTION DIODE DEVICE