Seiichi Isomae

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Kokubunji, JP

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Patents Grantslast 30 patents

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Semiconductor device having buried boron and carbon regions, and me...
- Patent number 6,635,950
- Issue date Oct 21, 2003
- Hitachi, Ltd.
- Hidetsugu Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried boron and carbon regions
- Patent number 6,198,157
- Issue date Mar 6, 2001
- Hitachi, Ltd.
- Hidetsugu Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recrystallized CMOS with different crystal planes
- Patent number 4,768,076
- Issue date Aug 30, 1988
- Hitachi, Ltd.
- Masaaki Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-containing silicon nitride film
- Patent number 4,126,880
- Issue date Nov 21, 1978
- Hitachi, Ltd.
- Yoichi Tamaki
- H01 - BASIC ELECTRIC ELEMENTS