Seiichi Iwamatsu

Person

Nagano, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Electron beam duplication lithography method
- Patent number 7,306,896
- Issue date Dec 11, 2007
- SI Diamond Technology, Inc.
- Seiichi Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron beam duplication lithography method and apparatus
- Patent number 7,011,927
- Issue date Mar 14, 2006
- SI Diamond Technology, Inc.
- Seiichi Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron beam duplication lithography method and apparatus
- Patent number 6,849,856
- Issue date Feb 1, 2005
- SI Diamond Technology, Inc.
- Seiichi Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming optimized thin film metal interconnects in integr...
- Patent number 5,504,037
- Issue date Apr 2, 1996
- Seiko Epson Corporation
- Seiichi Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with enhanced via or contact hole connection b...
- Patent number 5,327,011
- Issue date Jul 5, 1994
- Seiko Epson Corporation
- Seiichi Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film SOI semiconductor device having heavily doped diffusion r...
- Patent number 5,294,821
- Issue date Mar 15, 1994
- Seiko Epson Corporation
- Seiichi Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thin film metal interconnects in integrated circuit struc...
- Patent number 5,258,219
- Issue date Nov 2, 1993
- Seiko Epson Corporation
- Seiichi Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Josephson device
- Patent number 5,179,426
- Issue date Jan 12, 1993
- Seiko Epson Corporation
- Seiichi Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate metal oxide semiconductor field effect transistor
- Patent number 5,142,640
- Issue date Aug 25, 1992
- Seiko Epson Corporation
- Seiichi Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect type Josephson transistor
- Patent number 5,071,832
- Issue date Dec 10, 1991
- Seiko Epson Corporation
- Seiichi Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Electron beam duplication lithography method
- Publication number 20060151719
- Publication date Jul 13, 2006
- SI Diamond Technology, Inc.
- Seiichi Iwamatsu
- B82 - NANO-TECHNOLOGY
Information Patent Application
Electron beam duplication lithography method and apparatus
- Publication number 20050121623
- Publication date Jun 9, 2005
- SI Diamond Technology, Inc.
- Seiichi Iwamatsu
- B82 - NANO-TECHNOLOGY

Seiichi Iwamatsu

Person

Patents Grantslast 30 patents

Electron beam duplication lithography method

Electron beam duplication lithography method and apparatus

Electron beam duplication lithography method and apparatus

Method of forming optimized thin film metal interconnects in integr...

Semiconductor device with enhanced via or contact hole connection b...

Thin-film SOI semiconductor device having heavily doped diffusion r...

Optimized thin film metal interconnects in integrated circuit struc...

Josephson device

Trench gate metal oxide semiconductor field effect transistor

Field effect type Josephson transistor

Patents Applicationslast 30 patents

Electron beam duplication lithography method

Electron beam duplication lithography method and apparatus