Seiichi Shishiguchi

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Fabrication method of semiconductor device using ion implantation
- Patent number 6,372,591
- Issue date Apr 16, 2002
- NEC Corporation
- Akira Mineji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removal of metal contaminants from the surface of a silicon substra...
- Patent number 6,258,635
- Issue date Jul 10, 2001
- NEC Corporation
- Kousuke Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of semiconductor device using selective epitaxia...
- Patent number 6,190,976
- Issue date Feb 20, 2001
- NEC Corporation
- Seiichi Shishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a MOS field effect transistor with improved gate...
- Patent number 6,017,823
- Issue date Jan 25, 2000
- NEC Corporation
- Seiichi Shishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 6,010,914
- Issue date Jan 4, 2000
- NEC Corporation
- Seiichi Shishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device having a refractory...
- Patent number 5,972,785
- Issue date Oct 26, 1999
- NEC Corporation
- Seiichi Shishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cold-wall operated vapor-phase growth system
- Patent number 5,951,774
- Issue date Sep 14, 1999
- NEC Corporation
- Seiichi Shishiguchi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon semiconductor substrate and method of fabricating the same
- Patent number 5,894,037
- Issue date Apr 13, 1999
- NEC Corporation
- Hiroaki Kikuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming capacitor electrode having jagged surface
- Patent number 5,858,853
- Issue date Jan 12, 1999
- NEC Corporation
- Seiichi Shishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate surface treatment method capable of removing a spontaneou...
- Patent number 5,821,158
- Issue date Oct 13, 1998
- NEC Corporation
- Seiichi Shishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having trench isolation regions and bit...
- Patent number 5,798,544
- Issue date Aug 25, 1998
- NEC Corporation
- Shuichi Ohya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming doped polysilicon films
- Patent number 5,783,257
- Issue date Jul 21, 1998
- Tokyo Electron Limited
- Seiichi Shishiguchi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing silicon film to bury contact hole
- Patent number 5,773,357
- Issue date Jun 30, 1998
- NEC Corporation
- Seiichi Shishiguchi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming silicon film having jagged surface
- Patent number 5,543,347
- Issue date Aug 6, 1996
- NEC Corporation
- Hideo Kawano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating poly-silicon resistor
- Patent number 5,470,780
- Issue date Nov 28, 1995
- NEC Corporation
- Seiichi Shishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical vapor deposition apparatus for obtaining high quality epit...
- Patent number 4,992,301
- Issue date Feb 12, 1991
- NEC Corporation
- Seiichi Shishiguchi
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD MANUFACTURING SAME
- Publication number 20010012670
- Publication date Aug 9, 2001
- AKIRA MINEJI
- H01 - BASIC ELECTRIC ELEMENTS

Seiichi Shishiguchi

Person

Patents Grantslast 30 patents

Fabrication method of semiconductor device using ion implantation

Removal of metal contaminants from the surface of a silicon substra...

Fabrication method of semiconductor device using selective epitaxia...

Method of forming a MOS field effect transistor with improved gate...

Method for manufacturing a semiconductor device

Method for manufacturing a semiconductor device having a refractory...

Cold-wall operated vapor-phase growth system

Silicon semiconductor substrate and method of fabricating the same

Method for forming capacitor electrode having jagged surface

Substrate surface treatment method capable of removing a spontaneou...

Semiconductor memory device having trench isolation regions and bit...

Method for forming doped polysilicon films

Method for producing silicon film to bury contact hole

Method of forming silicon film having jagged surface

Method of fabricating poly-silicon resistor

Chemical vapor deposition apparatus for obtaining high quality epit...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD MANUFACTURING SAME