Seiichiro Kawamura

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating an SOI device in alignment with a device reg...
- Patent number 5,294,556
- Issue date Mar 15, 1994
- Fujitsu Limited
- Seiichiro Kawamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of a semiconductor integrated circuit having an...
- Patent number 5,116,768
- Issue date May 26, 1992
- Fujitsu Limited
- Seiichiro Kawamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming selective single crystal regions in insulated pockets forme...
- Patent number 5,011,783
- Issue date Apr 30, 1991
- Fujitsu Limited
- Tsutomu Ogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for annealing by a high energy beam to form a single-crystal...
- Patent number 4,589,951
- Issue date May 20, 1986
- Fujitsu Limited
- Seiichiro Kawamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating a semiconductor on insulator semiconductor...
- Patent number 4,584,025
- Issue date Apr 22, 1986
- Fujitsu Limited
- Matsuo Takaoka
- H01 - BASIC ELECTRIC ELEMENTS