Seiji NAKAHATA

Person

Itami-shi, Hyogo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 11,094,537
- Issue date Aug 17, 2021
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride substrate
- Patent number 10,837,124
- Issue date Nov 17, 2020
- Sumitomo Electric Industries, Ltd.
- Makoto Kiyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 10,600,676
- Issue date Mar 24, 2020
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- B32 - LAYERED PRODUCTS
Information Patent Grant
Gallium nitride substrate
- Patent number 10,458,043
- Issue date Oct 29, 2019
- Sumitomo Electric Industries, Ltd.
- Makoto Kiyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride substrate
- Patent number 10,443,151
- Issue date Oct 15, 2019
- Sumitomo Electric Industries, Ltd.
- Makoto Kiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride crystal, nitride crystal substrate, epilayer-containing nit...
- Patent number 10,078,059
- Issue date Sep 18, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride substrate
- Patent number 10,006,147
- Issue date Jun 26, 2018
- Sumitomo Electric Industries, Ltd.
- Makoto Kiyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 9,917,004
- Issue date Mar 13, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride crystal, nitride crystal substrate, epilayer-containing nit...
- Patent number 9,570,540
- Issue date Feb 14, 2017
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride crystal substrates and group III nitride crystal
- Patent number 9,368,568
- Issue date Jun 14, 2016
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Composite substrate
- Patent number 9,252,207
- Issue date Feb 2, 2016
- Sumitomo Electric Industries, Ltd.
- Yoko Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 9,136,337
- Issue date Sep 15, 2015
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite of III-nitride crystal on laterally stacked substrates
- Patent number 9,064,706
- Issue date Jun 23, 2015
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Composite of III-nitride crystal on laterally stacked substrates
- Patent number 8,872,309
- Issue date Oct 28, 2014
- Sumitomo Electronic Industries, Ltd.
- Naho Mizuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing group III nitride crystal
- Patent number 8,847,363
- Issue date Sep 30, 2014
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-nitride single-crystal ingot, III-nitride single-crystal substr...
- Patent number 8,845,992
- Issue date Sep 30, 2014
- Sumitomo Electric Industries, Ltd.
- Takuji Okahisa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride crystal, nitride crystal substrate, epilayer-containing nit...
- Patent number 8,828,140
- Issue date Sep 9, 2014
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
GaN single crystal substrate having a large area and a main surface...
- Patent number 8,823,142
- Issue date Sep 2, 2014
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Prepared and stored GaN substrate
- Patent number 8,772,787
- Issue date Jul 8, 2014
- Sumitomo Electric Industries, Ltd.
- Hideyuki Ijiri
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing III-nitride crystal
- Patent number 8,709,923
- Issue date Apr 29, 2014
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing composite substrate
- Patent number 8,664,085
- Issue date Mar 4, 2014
- Sumitomo Electric Industries, Ltd.
- Yoko Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN single crystal substrate and method of manufacturing thereof an...
- Patent number 8,598,685
- Issue date Dec 3, 2013
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride crystal and method for producing the same
- Patent number 8,524,575
- Issue date Sep 3, 2013
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Freestanding III-nitride single-crystal substrate and method of man...
- Patent number 8,501,592
- Issue date Aug 6, 2013
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of preparing and storing GaN substrate, prepared and stored...
- Patent number 8,476,158
- Issue date Jul 2, 2013
- Sumitomo Electric Industries, Ltd.
- Hideyuki Ijiri
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride semiconductor substrate and manufacturing method...
- Patent number 8,421,190
- Issue date Apr 16, 2013
- Sumitomo Electric Industries, Ltd.
- Takuji Okahisa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group-III nitride crystal composite
- Patent number 8,404,042
- Issue date Mar 26, 2013
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Fabrication method and fabrication apparatus of group III nitride c...
- Patent number 8,404,569
- Issue date Mar 26, 2013
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group III nitride single crystal and method of its growth
- Patent number 8,377,204
- Issue date Feb 19, 2013
- Sumitomo Electric Industries, Ltd.
- Michimasa Miyanaga
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
III nitride semiconductor crystal, III nitride semiconductor device...
- Patent number 8,362,521
- Issue date Jan 29, 2013
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20200176305
- Publication date Jun 4, 2020
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE SUBSTRATE
- Publication number 20200032419
- Publication date Jan 30, 2020
- Sumitomo Electric Industries, Ltd.
- Makoto KIYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE SUBSTRATE
- Publication number 20180237946
- Publication date Aug 23, 2018
- Sumitomo Electric Industries, Ltd.
- Makoto KIYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20180166325
- Publication date Jun 14, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE SUBSTRATE
- Publication number 20170137966
- Publication date May 18, 2017
- Sumitomo Electric Industries, Ltd.
- Makoto KIYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NIT...
- Publication number 20170115239
- Publication date Apr 27, 2017
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE SUBSTRATE
- Publication number 20170101724
- Publication date Apr 13, 2017
- Sumitomo Electric Industries, Ltd.
- Makoto KIYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20150194442
- Publication date Jul 9, 2015
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite of III-Nitride Crystal on Laterally Stacked Substrates
- Publication number 20150008563
- Publication date Jan 8, 2015
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride Crystal Substrates and Group III Nitride Crystal
- Publication number 20140369920
- Publication date Dec 18, 2014
- Koji Uematsu
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NIT...
- Publication number 20140349112
- Publication date Nov 27, 2014
- Keiji ISHIBASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
Composite of III-Nitride Crystal on Laterally Stacked Substrates
- Publication number 20140175616
- Publication date Jun 26, 2014
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20140103353
- Publication date Apr 17, 2014
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite Substrate
- Publication number 20140103358
- Publication date Apr 17, 2014
- Sumitomo Electric Industries, Ltd.
- Yoko Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN Single Crystal Substrate and Method of Manufacturing Thereof an...
- Publication number 20140061668
- Publication date Mar 6, 2014
- Sumitomo Electric Industries, Ltd.
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Group III Nitride Crystal
- Publication number 20130337632
- Publication date Dec 19, 2013
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NIT...
- Publication number 20130292802
- Publication date Nov 7, 2013
- Keiji ISHIBASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
Prepared and Stored GaN Substrate
- Publication number 20130256696
- Publication date Oct 3, 2013
- Hideyuki Ijiri
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...
- Publication number 20130244406
- Publication date Sep 19, 2013
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Manufacturing III-Nitride Crystal
- Publication number 20130160699
- Publication date Jun 27, 2013
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Manufacturing Composite Substrate
- Publication number 20130040437
- Publication date Feb 14, 2013
- Sumitomo Electric Industries, Ltd.
- Yoko Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride Crystal and Method for Producing the Same
- Publication number 20120329245
- Publication date Dec 27, 2012
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- C30 - CRYSTAL GROWTH
Information Patent Application
Group-III Nitride Crystal Composite
- Publication number 20120315445
- Publication date Dec 13, 2012
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
- Publication number 20120305933
- Publication date Dec 6, 2012
- Sumitomo Electric Industries, Ltd.
- Seiji NAKAHATA
- B82 - NANO-TECHNOLOGY
Information Patent Application
III-V Compound Crystal and Semiconductor Electronic Circuit Element
- Publication number 20120142168
- Publication date Jun 7, 2012
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Application
CONDUCTIVE NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING...
- Publication number 20120126371
- Publication date May 24, 2012
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Fumitaka Sato
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Synthesizing Nitride Semiconductor Single-Crystal Substrate
- Publication number 20120118226
- Publication date May 17, 2012
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, ME...
- Publication number 20120094473
- Publication date Apr 19, 2012
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
Freestanding III-Nitride Single-Crystal Substrate and Method of Man...
- Publication number 20120070962
- Publication date Mar 22, 2012
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Application
AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AN...
- Publication number 20120040511
- Publication date Feb 16, 2012
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH

Seiji NAKAHATA

Person

Patents Grantslast 30 patents

Group III nitride composite substrate and method for manufacturing...

Gallium nitride substrate

Group III nitride composite substrate and method for manufacturing...

Gallium nitride substrate

Gallium nitride substrate

Nitride crystal, nitride crystal substrate, epilayer-containing nit...

Gallium nitride substrate

Group III nitride composite substrate and method for manufacturing...

Nitride crystal, nitride crystal substrate, epilayer-containing nit...

Group III nitride crystal substrates and group III nitride crystal

Composite substrate

Group III nitride composite substrate and method for manufacturing...

Composite of III-nitride crystal on laterally stacked substrates

Composite of III-nitride crystal on laterally stacked substrates

Method for producing group III nitride crystal

III-nitride single-crystal ingot, III-nitride single-crystal substr...

Nitride crystal, nitride crystal substrate, epilayer-containing nit...

GaN single crystal substrate having a large area and a main surface...

Prepared and stored GaN substrate

Method of manufacturing III-nitride crystal

Method of manufacturing composite substrate

GaN single crystal substrate and method of manufacturing thereof an...

Group III nitride crystal and method for producing the same

Freestanding III-nitride single-crystal substrate and method of man...

Method of preparing and storing GaN substrate, prepared and stored...

Group III nitride semiconductor substrate and manufacturing method...

Group-III nitride crystal composite

Fabrication method and fabrication apparatus of group III nitride c...

Group III nitride single crystal and method of its growth

III nitride semiconductor crystal, III nitride semiconductor device...

Patents Applicationslast 30 patents

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

GALLIUM NITRIDE SUBSTRATE

GALLIUM NITRIDE SUBSTRATE

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

GALLIUM NITRIDE SUBSTRATE

NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NIT...

GALLIUM NITRIDE SUBSTRATE

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

Composite of III-Nitride Crystal on Laterally Stacked Substrates

Group III Nitride Crystal Substrates and Group III Nitride Crystal

NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NIT...

Composite of III-Nitride Crystal on Laterally Stacked Substrates

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

Composite Substrate

GaN Single Crystal Substrate and Method of Manufacturing Thereof an...

Method for Producing Group III Nitride Crystal

NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NIT...

Prepared and Stored GaN Substrate

FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...

Method of Manufacturing III-Nitride Crystal

Method of Manufacturing Composite Substrate

Group III Nitride Crystal and Method for Producing the Same

Group-III Nitride Crystal Composite

GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE

III-V Compound Crystal and Semiconductor Electronic Circuit Element

CONDUCTIVE NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING...

Method of Synthesizing Nitride Semiconductor Single-Crystal Substrate

GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, ME...

Freestanding III-Nitride Single-Crystal Substrate and Method of Man...

AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AN...