Semyon D. Savransky

Person

Newark, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Immunity of phase change material to disturb in the amorphous phase
- Patent number 9,570,163
- Issue date Feb 14, 2017
- OVONYX MEMORY TECHNOLOGY, LLC
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Grant
Seasoning phase change memories
- Patent number 9,536,606
- Issue date Jan 3, 2017
- OVONYX MEMORY TECHNOLOGY, LLC
- Ilya V. Karpov
- G11 - INFORMATION STORAGE
Information Patent Grant
Immunity of phase change material to disturb in the amorphous phase
- Patent number 9,251,895
- Issue date Feb 2, 2016
- Carlow Innovations LLC
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Grant
Immunity of phase change material to disturb in the amorphous phase
- Patent number 9,036,409
- Issue date May 19, 2015
- Ovonyx, Inc.
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Grant
Immunity of phase change material to disturb in the amorphous phase
- Patent number 8,861,293
- Issue date Oct 14, 2014
- Ovonyx, Inc.
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Grant
Immunity of phase change material to disturb in the amorphous phase
- Patent number 8,634,226
- Issue date Jan 21, 2014
- Ovonyx, Inc.
- George Gordon
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing temporal changes in phase change memories
- Patent number 8,462,546
- Issue date Jun 11, 2013
- Intel Corporation
- Semyon D. Savransky
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-heating phase change memory cell architecture
- Patent number 8,377,741
- Issue date Feb 19, 2013
- STMicroelectronics S.r.l.
- Semyon D. Savransky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing temporal changes in phase change memories
- Patent number 8,228,722
- Issue date Jul 24, 2012
- Intel Corporation
- Semyon D. Savransky
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing drift in chalcogenide devices
- Patent number 8,164,949
- Issue date Apr 24, 2012
- Ovonyx, Inc.
- Semyon D. Savransky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ovonic threshold switch film composition for TSLAGS material
- Patent number 8,148,707
- Issue date Apr 3, 2012
- STMicroelectronics S.r.l.
- Stanford Ovshinsky
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Phase change memory with layered insulator
- Patent number 8,076,664
- Issue date Dec 13, 2011
- Intel Corporation
- Semyon D. Savransky
- G11 - INFORMATION STORAGE
Information Patent Grant
Immunity of phase change material to disturb in the amorphous phase
- Patent number 7,990,761
- Issue date Aug 2, 2011
- Ovonyx, Inc.
- George Gordon
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing temporal changes in phase change memories
- Patent number 7,965,545
- Issue date Jun 21, 2011
- Intel Corporation
- Semyon D. Savransky
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing drift in chalcogenide devices
- Patent number 7,936,593
- Issue date May 3, 2011
- Ovonyx, Inc.
- Semyon D. Savransky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programming multilevel cell phase change memories
- Patent number 7,894,237
- Issue date Feb 22, 2011
- Intel Corporation
- Ilya V. Karpov
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Immunity of Phase Change Material to Disturb in the Amorphous Phase
- Publication number 20150206581
- Publication date Jul 23, 2015
- OVONYX, INC.
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Application
Immunity of Phase Change Material to Disturb in the Amorphous Phase
- Publication number 20150109857
- Publication date Apr 23, 2015
- OVONYX, INC.
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Application
Seasoning Phase Change Memories
- Publication number 20150055409
- Publication date Feb 26, 2015
- OVONYX, INC.
- Ilya V. Karpov
- G11 - INFORMATION STORAGE
Information Patent Application
Immunity of Phase Change Material to Disturb in the Amorphous Phase
- Publication number 20140328121
- Publication date Nov 6, 2014
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Application
Immunity of Phase Change Material to Disturb in the Amorphous Phase
- Publication number 20140098604
- Publication date Apr 10, 2014
- OVONYX, INC.
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Application
Reducing Temporal Changes in Phase Change Memories
- Publication number 20120262984
- Publication date Oct 18, 2012
- Semyon D. Savransky
- G11 - INFORMATION STORAGE
Information Patent Application
Immunity of Phase Change Material to Disturb in the Amorphous Phase
- Publication number 20110240943
- Publication date Oct 6, 2011
- Ovonyx, Inc.
- George Gordon
- G11 - INFORMATION STORAGE
Information Patent Application
Reducing Temporal Changes in Phase Change Memories
- Publication number 20110210300
- Publication date Sep 1, 2011
- Semyon D. Savransky
- G11 - INFORMATION STORAGE
Information Patent Application
Reducing Drift in Chalcogenide Devices
- Publication number 20110168965
- Publication date Jul 14, 2011
- Semyon D. Savransky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase change devices
- Publication number 20110079763
- Publication date Apr 7, 2011
- Semyon D. Savransky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of a phase-change memory programming
- Publication number 20110069540
- Publication date Mar 24, 2011
- Semyon D. Savransky
- G11 - INFORMATION STORAGE
Information Patent Application
Phase change devices
- Publication number 20100283025
- Publication date Nov 11, 2010
- Semyon D. Savransky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of cross-point memory programming and related devices
- Publication number 20100284213
- Publication date Nov 11, 2010
- Semyon D. Savransky
- G11 - INFORMATION STORAGE
Information Patent Application
Method of resistive memory programming and associated devices and m...
- Publication number 20100226163
- Publication date Sep 9, 2010
- Semyon D. Savransky
- G11 - INFORMATION STORAGE
Information Patent Application
Programming methods for phase-change memory
- Publication number 20100226168
- Publication date Sep 9, 2010
- Semyon D. Savransky
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-HEATING PHASE CHANGE MEMORY CELL ARCHITECTURE
- Publication number 20100163817
- Publication date Jul 1, 2010
- STMicroelectronics, S.r.l.
- Semyon D. Savransky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanoscale electrical device
- Publication number 20100090189
- Publication date Apr 15, 2010
- Semyon D. Savransky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of programming of phase-change memory and associated devices...
- Publication number 20100067290
- Publication date Mar 18, 2010
- Semyon D. Savransky
- G11 - INFORMATION STORAGE
Information Patent Application
Seasoning phase change memories
- Publication number 20090257275
- Publication date Oct 15, 2009
- Ilya V. Karpov
- G11 - INFORMATION STORAGE
Information Patent Application
Reducing drift in chalcogenide devices
- Publication number 20090250677
- Publication date Oct 8, 2009
- Semyon D. Savransky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Immunity of phase change material to disturb in the amorphous phase
- Publication number 20090244962
- Publication date Oct 1, 2009
- George Gordon
- G11 - INFORMATION STORAGE
Information Patent Application
Reducing temporal changes in phase change memories
- Publication number 20090244964
- Publication date Oct 1, 2009
- Semyon D. Savransky
- G11 - INFORMATION STORAGE
Information Patent Application
Programming multilevel cell phase change memories
- Publication number 20090244963
- Publication date Oct 1, 2009
- Ilya V. Karpov
- G11 - INFORMATION STORAGE
Information Patent Application
Phase change memory with layered insulator
- Publication number 20090159867
- Publication date Jun 25, 2009
- Semyon D. Savransky
- G11 - INFORMATION STORAGE
Information Patent Application
Higher threshold voltage phase change memory
- Publication number 20090072218
- Publication date Mar 19, 2009
- Semyon Savransky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric chalcogenide device
- Publication number 20080113464
- Publication date May 15, 2008
- Semyon D. Savransky
- G11 - INFORMATION STORAGE

Semyon D. Savransky

Person

Patents Grantslast 30 patents

Immunity of phase change material to disturb in the amorphous phase

Seasoning phase change memories

Immunity of phase change material to disturb in the amorphous phase

Immunity of phase change material to disturb in the amorphous phase

Immunity of phase change material to disturb in the amorphous phase

Immunity of phase change material to disturb in the amorphous phase

Reducing temporal changes in phase change memories

Self-heating phase change memory cell architecture

Reducing temporal changes in phase change memories

Reducing drift in chalcogenide devices

Ovonic threshold switch film composition for TSLAGS material

Phase change memory with layered insulator

Immunity of phase change material to disturb in the amorphous phase

Reducing temporal changes in phase change memories

Reducing drift in chalcogenide devices

Programming multilevel cell phase change memories

Patents Applicationslast 30 patents

Immunity of Phase Change Material to Disturb in the Amorphous Phase

Immunity of Phase Change Material to Disturb in the Amorphous Phase

Seasoning Phase Change Memories

Immunity of Phase Change Material to Disturb in the Amorphous Phase

Immunity of Phase Change Material to Disturb in the Amorphous Phase

Reducing Temporal Changes in Phase Change Memories

Immunity of Phase Change Material to Disturb in the Amorphous Phase

Reducing Temporal Changes in Phase Change Memories

Reducing Drift in Chalcogenide Devices

Phase change devices

Method of a phase-change memory programming

Phase change devices

Method of cross-point memory programming and related devices

Method of resistive memory programming and associated devices and m...

Programming methods for phase-change memory

SELF-HEATING PHASE CHANGE MEMORY CELL ARCHITECTURE

Nanoscale electrical device

Method of programming of phase-change memory and associated devices...

Seasoning phase change memories

Reducing drift in chalcogenide devices

Immunity of phase change material to disturb in the amorphous phase

Reducing temporal changes in phase change memories

Programming multilevel cell phase change memories

Phase change memory with layered insulator

Higher threshold voltage phase change memory

Asymmetric chalcogenide device