Sen HUANG

Person

Beijing, CN

People

Patents Grantslast 30 patents

Information Patent Grant
GaN-based superjunction vertical power transistor and manufacturing...
- Patent number 11,289,594
- Issue date Mar 29, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Sen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 10,749,021
- Issue date Aug 18, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Sen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low interface state device and method for manufacturing the same
- Patent number 10,276,366
- Issue date Apr 30, 2019
- Institute of Microelectronics, Chinese Academy of Sciences
- Xinyu Liu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
GaN-based power electronic device and method for manufacturing the...
- Patent number 10,062,775
- Issue date Aug 28, 2018
- Institute of Microelectronics, Chinese Academy of Sciences
- Sen Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FOLDED CHANNEL GALLIUM NITRIDE BASED FIELD-EFFECT TRANSISTOR AND ME...
- Publication number 20240355921
- Publication date Oct 24, 2024
- INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Sen HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Layer Semiconductor Material Structure and Preparation Method...
- Publication number 20230230831
- Publication date Jul 20, 2023
- INSTITUTE OF MICROELECTRONICS OF THE CHINES ACADEMY OF SCIENCES
- Fengwen MU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-BASED SUPERJUNCTION VERTICAL POWER TRANSISTOR AND MANUFACTURING...
- Publication number 20210399125
- Publication date Dec 23, 2021
- INSTITUTE OF MICROELLECTRONICS, CHINESE ACADEMY OF SCIENCES
- Sen HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DETECTOR BASED ON GALLIUM NITRIDE-BASED ENHANCEMENT-MODE DEVICE AND...
- Publication number 20210043761
- Publication date Feb 11, 2021
- INSTITUTE OF MICROELECTRONICS-CHINESE ACADEMY OF SCIENCES
- Sen HUANG
- G01 - MEASURING TESTING
Information Patent Application
GAN-BASED POWER ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20170309736
- Publication date Oct 26, 2017
- Institute of Microelectronics, Chinese Academy of Sciences
- Sen HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-DAMAGE ETCHING METHOD FOR III-NITRIDE
- Publication number 20170162398
- Publication date Jun 8, 2017
- Institute of Microelectronics, Chinese Academy of Sciences
- Xinyu LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20170125571
- Publication date May 4, 2017
- Institute of Microelectronics, Chinese Academy of Sciences
- Sen HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Interface State Device and Method for Manufacturing the Same
- Publication number 20160268124
- Publication date Sep 15, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Xinyu Liu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

GaN-based superjunction vertical power transistor and manufacturing...

Semiconductor device and method for manufacturing the same

Low interface state device and method for manufacturing the same

GaN-based power electronic device and method for manufacturing the...

Patents Applicationslast 30 patents

FOLDED CHANNEL GALLIUM NITRIDE BASED FIELD-EFFECT TRANSISTOR AND ME...

Multi-Layer Semiconductor Material Structure and Preparation Method...

GaN-BASED SUPERJUNCTION VERTICAL POWER TRANSISTOR AND MANUFACTURING...

DETECTOR BASED ON GALLIUM NITRIDE-BASED ENHANCEMENT-MODE DEVICE AND...

GAN-BASED POWER ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE...

LOW-DAMAGE ETCHING METHOD FOR III-NITRIDE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Low Interface State Device and Method for Manufacturing the Same